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 ferromagnetism in carbon-doped 
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 for spintronic applications: A density functional theory study

Chakraborty, Brahmananda; Nandi, Prithwish K.; Kawazoe, Yoshiyuki; Ramaniah, Lavanya M.

doi:10.1103/physrevb.97.184411

Cited by 23 publications

(9 citation statements)

References 63 publications

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“…Many efforts have been made to prepare DMS/DMO by doping conventional non-magnetic semiconductors/oxides with magnetic impurities. Interestingly, unexpected room-temperature ferromagnetism in the absence of magnetic impurities, has been additionally observed [26,27,28,29,30,31,32,33]. In the emerging field of spin-based nanoelectronics, group-III mono-chalcogenides may offer a great potential.…”

Section: Introductionmentioning

confidence: 97%

“…Many efforts have been made to prepare DMS/DMO by doping conventional nonmagnetic semiconductors/oxides with magnetic impurities. Interestingly, unexpected room-temperature ferromagnetism in the absence of magnetic impurities has been additionally observed. − In the emerging field of spin-based nanoelectronics, group-III monochalcogenides may offer a great potential. In particular, spontaneous magnetization has been theoretically predicted in hole-doped GaS and GaSe monolayers. , Such magnetization arises from an exchange splitting of the electronic states at the valence band top, where the density of states exhibits a sharp Van Hove singularity, resulting in the so-called Stoner instability.…”

Section: Introductionmentioning

confidence: 99%

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Hole-Doped 2D InSe for Spintronic Applications

Iordanidou

Houssa

Kioseoglou

et al. 2018

ACS Appl. Nano Mater.

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Using first-principles calculations based on density functional theory, we study the magnetic and electronic properties of hole-doped two-dimensional InSe. Our simulations reveal that although 2D InSe is intrinsically non-magnetic, a stable ferromagnetic phase appears for a wide range of hole densities. Interestingly, hole doping not only induces spontaneous magnetization but also half-metallicity, and hole-doped InSe, presenting one conducting and one insulating spin channel, could be highly promising for next generation spintronic nanodevices. The possibility to induce hole doping and a subsequent ferromagnetic order by intrinsic and extrinsic defects was also investigated. We found that In vacancy creates spin-polarized states close to the valence band and leads to a p-type behavior. Similar to In vacancies, group-V atoms replacing Se atoms lead to a p-type behavior, potentially stabilizing a ferromagnetic order in 2D InSe.

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Section: Introductionmentioning

confidence: 97%

Section: Introductionmentioning

confidence: 99%

Hole-Doped 2D InSe for Spintronic Applications

Iordanidou

Houssa

Kioseoglou

et al. 2018

ACS Appl. Nano Mater.

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“…Different from the traditional magnetic semiconductors, the cluster structure formed by the doped elements has no contribution to the magnetic order of the system. Brahmananda predicted the room temperature ferromagnetism (FM) in C-doped Y 2 O 3 [ 54 ] and MoO 3 [ 55 ]. Niu [ 13 ] demonstrated that Bi 2 Se 3 with B, C and N doping is ferromagnetic.…”

Section: Introductionmentioning

confidence: 99%

An Efficient Dopant for Introducing Magnetism into Topological Insulator Bi2Se3

Wang

Liu

et al. 2022

Materials

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In this work, we obtained an effective way to introduce magnetism into topological insulators, and successfully fabricated single crystal C-Bi2Se3. The structural, electrical and magnetic properties of non-magnetic element X (B, C and N) doped at Bi, Se1, Se2 and VDW gap sites of Bi2Se3 were studied by the first principles. It is shown that the impurity bands formed inside the bulk inverted energy gap near the Fermi level with C doping Bi2Se3. Due to spin-polarized ferromagnetic coupling, the time inversion symmetry of Bi2Se3 is destroyed. Remarkably, C is the most effective dopant because of the magnetic moment produced by doping at all positions. The experiment confirmed that the remnant ferromagnetism Mr is related to the C concentration. Theoretical calculations and experiments confirmed that carbon-doped Bi2Se3 is ferromagnetic, which provides a plan for manipulating topological properties and exploring spintronic applications.

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“…So far, a lot of spintronic materials have been studied, − such as a half-metal, , which is any substance that acts like a metal in one spin channel and a semiconductor in the other spin channel and can provide completely spin-polarized currents. Recently, d 0 ferromagnetism has attracted great attention. − As an example, in 2018, Chakraborty et al found that carbon-doped Y 2 O 3 shows room-temperature d 0 ferromagnetism. However, finding new spintronic materials is still challenging.…”

Section: Introductionmentioning

confidence: 99%

“…Recently, d 0 ferromagnetism has attracted great attention. 18−20 As an example, in 2018, Chakraborty et al 18 found that carbon-doped Y 2 O 3 shows room-temperature d 0 ferromagnetism. However, finding new spintronic materials is still challenging.…”

Section: ■ Introductionmentioning

confidence: 99%

Singular Nonmagnetic Semiconductor ScH₃ Molecular Nanowire: A New Type of Room-Temperature Spintronic Material

Lou

Lee

2019

J. Phys. Chem. C

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Trihydride molecular nanowire (ScH 3 ) is a nonmagnetic semiconductor with a direct band gap and could retain its structure at temperatures up to 1200 K. In this paper, we report that ScH 3 could be a new type of ideal room-temperature spintronic material. The simulations of the ScH 3 field-effect transistor show that ScH 3 turns into a ferromagnetic (FM) half-metal upon electron-or hole-doping induced by the applied gate voltage. State-of-the-art ab initio calculations reveal that the FM of electrondoped ScH 3 originates from the 3d electrons of Sc atoms, whereas the FM of hole-doped ScH 3 originates from the 1s electrons of H atoms, which can be understood by the Stoner picture of band magnetism. The spin-polarized quantum molecular dynamics simulations demonstrate that the ferromagnetic half-metal survives at room temperature. These findings reveal that ScH 3 is a new type of ideal room-temperature spintronic material and opens a new door for finding spintronic materials compatible with the current technology in the semiconductor industry.

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Room-temperature d0 ferromagnetism in carbon-doped Y2O3 for spintronic applications: A density functional theory study

Cited by 23 publications

References 63 publications

Hole-Doped 2D InSe for Spintronic Applications

Hole-Doped 2D InSe for Spintronic Applications

An Efficient Dopant for Introducing Magnetism into Topological Insulator Bi2Se3

Singular Nonmagnetic Semiconductor ScH₃ Molecular Nanowire: A New Type of Room-Temperature Spintronic Material

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Room-temperature d0 ferromagnetism in carbon-doped Y2O3 for spintronic applications: A density functional theory study

Cited by 23 publications

References 63 publications

Hole-Doped 2D InSe for Spintronic Applications

Hole-Doped 2D InSe for Spintronic Applications

An Efficient Dopant for Introducing Magnetism into Topological Insulator Bi2Se3

Singular Nonmagnetic Semiconductor ScH3 Molecular Nanowire: A New Type of Room-Temperature Spintronic Material

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Product

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Singular Nonmagnetic Semiconductor ScH₃ Molecular Nanowire: A New Type of Room-Temperature Spintronic Material