Room temperature magnetron sputtering and laser annealing of ultrathin MoS2 for flexible transistors

Sirota, Benjamin; Glavin, Nicholas R.; Voevodin, Andrey A.

doi:10.1016/j.vacuum.2018.10.077

Cited by 54 publications

(26 citation statements)

References 25 publications

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“…The resistance of these devices varied from 185 to 490 MΩ with an average of 347 MΩ as shown in the box plot of Fig. 1 c. The measured values of resistance for our MoS 2 devices are consistent with what has been reported in the literature 34 , 49 – 51 , 53 , 54 . After characterizing the as-prepared samples, we doped the MoS 2 film by immersing it in BV solution for 36 h (see “Method” section for detail) and measured their electrical transport properties.…”

Section: Resultssupporting

confidence: 88%

Scalable lateral heterojunction by chemical doping of 2D TMD thin films

Chamlagain

Withanage

Johnston

et al. 2020

Sci Rep

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Scalable heterojunctions based on two-dimensional transitional metal dichalcogenides are of great importance for their applications in the next generation of electronic and optoelectronic devices. However, reliable techniques for the fabrication of such heterojunctions are still at its infancy. Here we demonstrate a simple technique for the scalable fabrication of lateral heterojunctions via selective chemical doping of TMD thin films. We demonstrate that the resistance of large area MoS 2 and MoSe 2 thin film, prepared via low pressure chalcogenation of molybdenum film, decreases by up to two orders of magnitude upon doping using benzyl viologen (BV) molecule. X-ray photoelectron spectroscopy (XPS) measurements confirms n-doping of the films by BV molecules. Since thin films of MoS 2 and MoSe 2 are typically more resistive than their exfoliated and co-evaporation based CVD counterparts, the decrease in resistance by BV doping represents a significant step in the utilization of these samples in electronic devices. Using selective BV doping, we simultaneously fabricated many lateral heterojunctions in 1 cm 2 MoS 2 and 1 cm 2 MoSe 2 films. The electrical transport measurements performed across the heterojunctions exhibit current rectification behavior due to a band offset created between the doped and undoped regions of the material. Almost 84% of the fabricated devices showed rectification behavior demonstrating the scalability of this technique.

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Section: Resultssupporting

confidence: 88%

Scalable lateral heterojunction by chemical doping of 2D TMD thin films

Chamlagain

Withanage

Johnston

et al. 2020

Sci Rep

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“…S11 correspond to molybdenum oxide. These oxide species were not detected by Raman spectroscopy, which indicates they are substitution for sulphur vacancies in the MoS 2 lattice rather than individual molybdenum oxides layers 34 . The second doublet W (6+) f 7/2 and W (6+) f 5/2 in W core level of Fig.…”

Section: Resultsmentioning

confidence: 93%

“…S7 b) again did not reveal any obvious vibrational modes for the oxide. This indicates that, just as with the MoS 2 layers, the films contain oxidised WS 2 rather than two individual layers of WS 2 and WO 3 (but with a higher level of oxidation for WS 2 compared to MoS 2 ) 34 . We hypothesize that the oxide content in both MoS 2 and WS 2 films has been significantly increased compared to individual tracks because the large area, overlapping raster scanned films which are required for the XPS analysis subjected the material to prolonged laser exposure which can be considered as the equivalent of prolonged thermal annealing in an oxidizing atmosphere.…”

Section: Resultsmentioning

confidence: 95%

Laser printed two-dimensional transition metal dichalcogenides

Abbas

Lewis

Aspiotis

et al. 2021

Sci Rep

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Laser processing is a highly versatile technique for the post-synthesis treatment and modification of transition metal dichalcogenides (TMDCs). However, to date, TMDCs synthesis typically relies on large area CVD growth and lithographic post-processing for nanodevice fabrication, thus relying heavily on complex, capital intensive, vacuum-based processing environments and fabrication tools. This inflexibility necessarily restricts the development of facile, fast, very low-cost synthesis protocols. Here we show that direct, spatially selective synthesis of 2D-TMDCs devices that exhibit excellent electrical, Raman and photoluminescence properties can be realized using laser printing under ambient conditions with minimal lithographic or thermal overheads. Our simple, elegant process can be scaled via conventional laser printing approaches including spatial light modulation and digital light engines to enable mass production protocols such as roll-to-roll processing.

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“…Top‐gated FETs with bilayer and five‐layer MoS 2 channels showed a current on/off ratio of 10 4 and electron mobility of 0.0136 cm 2 V −1 s −1 and 0.0564 cm 2 V −1 s −1 , respectively. Sirota et al 109 reported direct sputtering of MoS 2 onto SiO 2 /Si and PDMS substrate. The single‐step MoS 2 magnetron sputtering was performed at room temperature for 120 s and followed with a laser annealing method using a pulsed 248 nm laser beam in air.…”

Section: Preparation Of Tmdcsmentioning

confidence: 99%

“…B, Schematic of top‐gated field effect transistor (FET) device fabrication on PDMS substrate with a laser annealing process. Reproduced with permission from Reference 109. C, Cross‐sectional and plane‐view HRTEM image of sputtered bilayer MoS 2 .…”

Section: Preparation Of Tmdcsmentioning

confidence: 99%

Synthesis of two‐dimensional transition metal dichalcogenides for electronics and optoelectronics

Xiao

Zeng

et al. 2020

InfoMat

109

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Tremendous efforts have been devoted to preparing the ultrathin two‐dimensional (2D) transition‐metal dichalcogenides (TMDCs) and TMDCs‐based heterojunctions owing to their unique properties and great potential applications in next generation electronics and optoelectronics over the past decade. However, to fulfill the demands for practical applications, the batch production of 2D TMDCs with high quality and large area at the mild conditions is still a challenge. This feature article reviews the state‐of‐the‐art research progresses that focus on the preparation and the applications in electronics and optoelectronics of 2D TMDCs and their van der Waals heterojunctions. First, the preparation methods including chemical and physical vapor deposition growth are comprehensively outlined. Then, recent progress on the application of fabricated 2D TMDCs‐based materials is revealed with particular attention to electronic (eg, field effect transistors and logic circuits) and optoelectronic (eg, photodetectors, photovoltaics, and light emitting diodes) devices. Finally, the challenges and future prospects are considered based on the current advance of 2D TMDCs and related heterojunctions.

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Room temperature magnetron sputtering and laser annealing of ultrathin MoS2 for flexible transistors

Cited by 54 publications

References 25 publications

Scalable lateral heterojunction by chemical doping of 2D TMD thin films

Scalable lateral heterojunction by chemical doping of 2D TMD thin films

Laser printed two-dimensional transition metal dichalcogenides

Synthesis of two‐dimensional transition metal dichalcogenides for electronics and optoelectronics

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