Room temperature magnetoelectric memory cell using stress-mediated magnetoelastic switching in nanostructured multilayers

Abstract

We present here the demonstration of magnetoelectric switching of magnetization between two stable positions defined by a combination of anisotropy and magnetic field. A magnetoelastic nanostructured multilayer with the required uni-axial characteristic was deposited onto a commercial piezoelectric actuator. Thanks to the inverse magnetostrictive effect, the effective anisotropy of the magnetic element is controlled by the applied voltage and used to switch magnetization from one state to the other. Both vibrating sample magnetometer and magneto-optical Kerr effect measurements have been performed and demonstrate the magnetoelectric switching.

Angle dependence on the anisotropic magnetoresistance amplitude of a single-contacted Ni nanowire subjected to a thermo-mechanical strain

“…The ability of controlling the magnetization of magnetic nanomaterials with piezoelectric means -through the so-called inverse magnetostriction (H ms ) effect -is a challenging approach for data storage and data processing applications [1][2][3][4][5]. Electrodeposition technique has already proven to be very efficient to grow magnetic nanowires (NWs) using template synthesis.…”

Thermal effects in magnetoelectric memories with stress-mediated switching

“…In particular, we consider a recently proposed heterostructure composed of a magnetoelastic particle embedded in a piezoelectric matrix [14,15]. We validated this approach by realising two macroscopic versions of this memory element [16,17]. Moreover, the assembly of the structure at the nanoscale is still in progress [18].…”

Multiferroic Operation of Dynamic Memory Based on Heterostructured Cantilevers

“…The present scheme of biferroic memory represents a departure from other types of multiferroic memory previously reported. [18][19][20][21] In conclusion, we have demonstrated multiferroic operation of a dynamic memory using integrated heterostructured cantilevers. It is known that nanoelectromechanical systems (NEMS) can operate at frequencies up to gigahertz.…”