“…Mixed valence manganite R1−xAxMnO3 (R indicates rare earth elements, such as La, Pr, Sm and Dy; A indicates divalent elements, such as Ca, Sr and Ba) with perovskite structure has been extensively studied for further understanding on theoretical aspect, as well as for the potential application because of the colossal magnetoresistance (CMR) effect. The magnetoresistance phenomenon has proven its applicability in magnetic sensing and magnetic recording technologies [1]. In addition, the relative change of the electrical resistance of some manganite material in the presence of increased magnitude of applied electric field or current, which leads to electroresistance (ER) effect, has scientific interest as well as ramifications for applications, such as non-volatile memory elements [2].…”