Room temperature lasing in injection microdisks with InGaAsN/GaAs quantum well active region

Moiseev, E. I.; Maximov, M. V.; Nadtochiy, A. M.; Kryzhanovskaya, N. V.; Sannikov, D. A.; Yagafarov, Timur; Kulagina, M. M.; Niemi, Tapio; Isoaho, Riku; Guina, Mircea; Zhukov, A. E.

doi:10.1088/1742-6596/1124/8/081048

Cited by 1 publication

(1 citation statement)

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“…We explain this by smaller localization energy (since their emission is shifted to shorter wavelengths compared to QD-on-GaAs) and, therefore, higher population of the waveguide with charge carriers, which can diffuse to the sidewalls. QWon-GaAs microlasers 56,57 are characterized by yet higher values of J th~1 0 kA/cm 2 ; the / 1=D term has an order of magnitude higher coefficient j 1 % 4.5 A/cm. This is despite the fact that the localization energy there is quite large, since the emission wavelength is~1.25 µm.…”

Section: Threshold Current Densitymentioning

confidence: 98%

Quantum-dot microlasers based on whispering gallery mode resonators

et al. 2021

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The subject of this paper is microlasers with the emission spectra determined by the whispering gallery modes. Owing to the total internal reflection of light on the sidewalls, a high Q-factor is achieved until the diameter is comparable to the wavelength. The light emission predominantly occurs in the plane of the structure, which facilitates the microlaser integration with other elements. We focus on microdisk lasers with various types of the In(Ga)As quantum dots (QDs). Deep localization of charge carriers in spatially separated regions suppresses the lateral diffusion and makes it possible to overcome the undesirable effect of non-radiative recombination in deep mesas. Thus, using conventional epitaxial structures and relatively simple post-growth processing methods, it is possible to realize small microlasers capable of operating without temperature stabilization at elevated temperatures. The low sensitivity of QDs to epitaxial and manufacturing defects allows fabricating microlasers using III–V heterostructures grown on silicon.

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Section: Threshold Current Densitymentioning

confidence: 98%