Room‐Temperature InGaAs Nanowire Array Band‐Edge Lasers on Patterned Silicon‐on‐Insulator Platforms (Phys. Status Solidi RRL 3/2019)

Abstract

The back‐cover image represents lasing from square‐lattice nanowire array photonic crystals on silicon‐on‐insulator (SOI) platforms. Integration of light sources on silicon platforms is regarded as a crucial requirement for various nanophotonic applications, but the lattice mismatch between III–V materials and silicon has been one of the major challenges to realize this. Here, Hyunseok Kim et al. (article no. http://doi.wiley.com/10.1002/pssr.201800489) employed bottom‐up integrated nanowires to overcome this issue and realize highquality III.V materials on silicon. InGaAs/InP core/shell nanowires form photonic crystals with a footprint of only 3.0×3.0 μm2, and a high Q factor of 23,000 is achieved by integrating these nanowires on two‐dimensional silicon gratings. Roomtemperature lasing is observed from a fundamental band‐edge mode at 1290 nm, which is the O‐band of the telecommunication wavelength. These results represent a meaningful step toward ultracompact and monolithic III–V lasers on silicon photonic platforms.

Lasing from InP Nanowire Photonic Crystals on InP Substrate

“…The lasing thresholds are comparable to or lower than excitation levels obtained from lift‐off or on SOI grown arrays. [ 23–28 ] Our results also provide an important insight into the mechanism of lasing from these PhC arrays, where initially lasing starts from isolated islands within the pumped region, which coherently merge into a single homogeneous area with increasing excitation power.…”

“…[ 23 ] Optically pumped lasing from a lift‐off 2D GaAs/InGaAs/GaAs NW array was realized at a wavelength of 960 nm. [ 24 ] The same group reported optically pumped lasing from 2D [ 18,25,26 ] and 1D InGaAs NW arrays [ 27–29 ] monolithically grown on silicon‐on‐insulator operating at wavelengths ranging from ≈1.1 to 1.4 µm with threshold pump fluences as low as 16 µW cm −2 .…”

“…Epitaxial integration of bottom‐up InGaAs NW PhC arrays onto a SOI platform has recently been demonstrated [ 26–29 ] while electrically pumped lasing using the Si device layer as carrier injection material is still under intensive investigation. As an alternative step toward electrical injection, we investigate optically pumped lasing from InP NW PhC arrays still being attached to the InP substrate which can be used as a carrier injection layer.…”

Effective Passivation of InGaAs Nanowires for Telecommunication Wavelength Optoelectronics

“…Various III‐V semiconductor shells of GaAs, [ 17,18 ] AlGaAs [ 11,16,19 ] InGaP, [ 4,20 ] InP, [ 21,22 ] InAlAs, [ 23 ] and InAsP [ 24 ] have been grown on InGaAs core nanowires with different compositions for the fabrication of optoelectronic devices. Amongst these different passivation materials, InP with a higher bandgap energy of 1.34 eV and a very low SRV of 170 cm.s −1 is an ideal candidate.…”

“…[ 25 ] Moreover, InP is lattice‐matched to In 0.53 Ga 0.47 As and can form type I or type II band alignment depending on the core Ga content. [ 5 ] Despite progress, [ 21,22,26 ] the effect of the microstructure and shell quality on the optoelectronic properties of nanowires has not been studied in depth.…”