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Olbrich, P.; Golub, L. E.; Herrmann, T.; Danilov, Sergey; Plank, H.; Bel'kov, Vasily V.; Mußler, Gregor; Weyrich, Ch.; Schneider, Claus M.; Kampmeier, Jörn; Grützmacher, Detlev; Pluciński, Ł.; Eschbach, Markus; Ganichev, Sergey

doi:10.1103/physrevlett.113.096601

Cited by 121 publications

(159 citation statements)

References 31 publications

(25 reference statements)

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“…2). The XRD data demonstrate the formation of two trigonal domains, which are mirror symmetric to each other, and show, however, that the majority of the domains have the same orientation [19,55]. The domains can also be seen in the atomic force microscopy images showing trigonal islands (not shown).…”

Section: Sample Descriptionmentioning

confidence: 71%

“…An important advantage of the nonlinear high-frequency transport effects is that some of them, being forbidden by symmetry in the bulk of most 3D TIs, can be applied to selectively probe the surface states even in TI materials with a finite bulk conductivity. Utilizing photocurrents, this advantage has been used to study Sb 2 Te 3 and Bi 2 Te 3 3D TIs [19], in which conventional dc transport experiments, particularly at room temperature, are handicapped by a large residual bulk charge-carrier density [40][41][42][43][44][45].…”

Section: Introductionmentioning

confidence: 99%

“…[13]) and several TI materials (see, e.g., Refs. [15,19,23,34]). An important advantage of the nonlinear high-frequency transport effects is that some of them, being forbidden by symmetry in the bulk of most 3D TIs, can be applied to selectively probe the surface states even in TI materials with a finite bulk conductivity.…”

Section: Introductionmentioning

confidence: 99%

“…[19] that the photocurrent excited by normal incident terahertz (THz) radiation is generated due to the photogalvanic effect. The latter originated from the asymmetric scattering of Dirac fermions driven back and forth by the ac electric field and is allowed only in the noncentrosymmetric surface states.…”

Section: Introductionmentioning

confidence: 99%

“…There have been many theoretical and experimental works in the past few years on helicity-controlled photocurrents [14][15][16][17][18], the linear photogalvanic effect [19][20][21], local photocurrents [22,23], edge photocurrents in two-dimensional (2D) TIs [24,25], coherent control of injection currents [26,27], photon drag currents [19,28,29], second-harmonic generation [30], photoinduced quantum Hall insulators [31,32], cyclotron-resonance-assisted photocurrents [33,34], quantum oscillations of photocurrents [35], photogalvanic currents via proximity interactions with magnetic materials [36][37][38], and the photoelectromagnetic effect [39]. These phenomena, scaling in the second or third order of the radiation electric fields, open up new opportunities to study Dirac fermions, which has been already demonstrated for graphene (for a review see Ref.…”

Section: Introductionmentioning

confidence: 99%

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Photon drag effect in(Bi1−xSbx)2Te3three-dimensional topological insulators

et al. 2016

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We report on the observation of a terahertz radiation-induced photon drag effect in epitaxially grown nand p-type (Bi 1−x Sb x ) 2 Te 3 three-dimensional topological insulators with different antimony concentrations x varying from 0 to 1. We demonstrate that the excitation with polarized terahertz radiation results in a dc electric photocurrent. While at normal incidence a current arises due to the photogalvanic effect in the surface states, at oblique incidence it is outweighed by the trigonal photon drag effect. The developed microscopic model and theory show that the photon drag photocurrent can be generated in surface states. It arises due to the dynamical momentum alignment by time-and space-dependent radiation electric field and implies the radiation-induced asymmetric scattering in the electron momentum space. We show that the photon drag current may also be generated in the bulk. Both surface states and bulk photon drag currents behave identically upon variation of such macroscopic parameters as radiation polarization and photocurrent direction with respect to the radiation propagation. This fact complicates the assignment of the trigonal photon drag effect to a specific electronic system.

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Section: Sample Descriptionmentioning

confidence: 71%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Photon drag effect in(Bi1−xSbx)2Te3three-dimensional topological insulators

et al. 2016

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Ultrasensitive Room‐Temperature Terahertz Direct Detection Based on a Bismuth Selenide Topological Insulator

Tang

Politano

Guo

et al. 2018

Adv Funct Materials

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Despite their huge application capabilities, millimeter-and terahertzwave photodetectors still face challenges in the detection scheme. Topological insulators (TIs) are predicted to be promising candidates for long-wavelength photodetection, due to the presence of Dirac fermions in their topologically protected surface states. However, photodetection based on TIs is usually hindered by the large dark current, originating from the mixing of bulk states with topological surface states (TSSs) in most realistic samples of TIs. Here millimeter and terahertz detectors based on a subwavelength metal-TI-metal (MTM) heterostructure are demonstrated. The achieved photoresponse stems from the asymmetric scattering of TSS, driven by the localized surface plasmon-induced terahertz field, which ultimately produces direct photocarriers beyond the interband limit. The device enables high responsivity in both the self-powered and bias modes even at room temperature. The achieved responsivity is over 75 A/W, with response time shorter than 60 ms in the self-powered mode. Remarkably, the responsivity increases by several orders of magnitude in the biased configuration, with the noise-equivalent power (NEP) of 3.6 × 10 −13 W Hz −1/2 and a detectivity of 2.17 × 10 11 cm Hz −1/2 W −1 at room temperature. The detection performances open a way toward realistic exploitation of TIs for large-area, real-time imaging within long-wavelength optoelectronics.

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Dual Topology of Dirac Electron Transport and Photogalvanic Effect in Low‐Dimensional Topological Insulator Superlattices

et al. 2023

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are protected by time-reversal symmetry (TRS) and characterized by a nonzero Z 2 invariant. [1] The spin and momentum of topological edge states (2D TIs) or surface states (3D TIs) are orthogonally locked and robust against nonmagnetic backscattering. [2] Beyond the Z 2 -order protected band topology, the crystalline symmetry preserves the band topology in cases such as discrete rotation and mirror symmetry which defines the topological crystalline insulators (TCIs). [3] A combination of these two topological properties in one material, i.e., dual topology, defines a dual TI and offers fertile possibilities of gapping one topological surface state via breaking the respective symmetry while preserving another. [4] Therefore, the exploration of dual TIs can elucidate more degrees of freedom to manipulate the band structure and electric transport properties for designing novel topological electronic, spintronic, thermoelectric, and optical devices. [5] Dual TIs can exist in different topological forms. [6] One form refers to dual protection of surface states by multiple bulk symmetries, such as Bi 2 Te 3 [6b] predicted to be both a TI and a TCI whose topological surface state is protected by TRS and crystal symmetry simultaneously. Another interesting form is that the dual TIs can Dual topological insulators, simultaneously protected by time-reversal symmetry and crystalline symmetry, open great opportunities to explore different symmetry-protected metallic surface states. However, the conventional dual topological states located on different facets hinder integration into planar opto-electronic/spintronic devices. Here, dual topological superlattices (TSLs) Bi 2 Se 3 -(Bi 2 /Bi 2 Se 3 ) N with limited stacking layer number N are constructed. Angle-resolved photoelectron emission spectra of the TSLs identify the co existence and adjustment of dual topological surface states on Bi 2 Se 3 facet. The existence and tunability of spin-polarized dual-topological bands with N on Bi 2 Se 3 facet result in an unconventionally weak antilocalization effect (WAL) with variable WAL coefficient α (maximum close to 3/2) from quantum transport experiments. Most importantly, it is identified that the spin-polarized surface electrons from dual topological bands exhibit circularly and linearly polarized photogalvanic effect (CPGE and LPGE). It is anticipated that the stacked dual-topology and stacking layer number controlled bands evolution provide a platform for realizing intrinsic CPGE and LPGE. The results show that the surface electronic structure of the dual TSLs is highly tunable and well-regulated for quantum transport and photoexcitation, which shed light on engineering for opto-electronic/spintronic applications.

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Room-Temperature High-Frequency Transport of Dirac Fermions in Epitaxially GrownSb2Te3- andBi

Cited by 121 publications

References 31 publications

Photon drag effect in(Bi1−xSbx)2Te3three-dimensional topological insulators

Photon drag effect in(Bi1−xSbx)2Te3three-dimensional topological insulators

Ultrasensitive Room‐Temperature Terahertz Direct Detection Based on a Bismuth Selenide Topological Insulator

Dual Topology of Dirac Electron Transport and Photogalvanic Effect in Low‐Dimensional Topological Insulator Superlattices

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