Room temperature growth of CsPbBr3 single crystal for asymmetric MSM structure photodetector

Su, Longxing

doi:10.1016/j.jmst.2024.01.003

Cited by 9 publications

(3 citation statements)

References 38 publications

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“…In the past decades, two-dimensional (2D) layered materials have demonstrated great success in electronic devices and optoelectronic devices. [1][2][3][4] Among 2D materials, PbI 2 is a binary compound with a direct bandgap of 2.2-2.5 eV and an anisotropic structure. PbI 2 is not only an excellent candidate for high-performance X-/g-ray detectors 5,6 but also an essential precursor for 2D perovskites.…”

Section: Introductionmentioning

confidence: 99%

Kilogram-scale high-yield production of PbI₂ microcrystals for optimized photodetectors

Sun,

Su,

Zeng

et al. 2024

J. Mater. Chem. C

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Section: Introductionmentioning

confidence: 99%

Kilogram-scale high-yield production of PbI₂ microcrystals for optimized photodetectors

Sun,

Su,

Zeng

et al. 2024

J. Mater. Chem. C

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“…Multi-functional photodetectors have always been in urgent demand in society [1]. Recently, dual-mode photodetectors have been considered and developed for photo-sensing lights with applications in optical communication and imaging.…”

Section: Introductionmentioning

confidence: 99%

A voltage-driven dual-mode MoSe₂ photodetector with graphene as van der Waals contact

Xia,

Wang,

Liu

et al. 2024

J. Phys. D: Appl. Phys.

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Two-dimensional (2D) molybdenum selenide (MoSe2) is promising for developing photodetectors for harvesting lights from UV to near infrared band, while high responsivity and fast response speed are difficult to be simultaneously realized. Herein, we present a dual-mode MoSe2 photodetector with asymmetric electrodes, in which Graphene and Cr metal are utilized as Ohmic and Schottky contacts, respectively. The photodiode possesses a fabulous Schottky characteristic with rectification ratio of ~250 and low dark current of ~40 pA at -1 V. Under forward bias voltage of 1 V, the photodetector works at photoconductive mode with slow response speed (decay time: ~5 minutes) but high responsivity (632 mA/W). However, at reverse bias voltage, the photodetector plays as a photovoltaic type device owing to the Schottky barrier between Cr and MoSe2. Because of the reinforced built-in electric field, the photodetector driven at -5 V shows much faster response speeds (rise time: 1.96 ms; decay time: 755 µs). The study provides a deep understanding of an asymmetric structure MoSe2 photodetctors operated at two modes, which promotes a forward step toward 2D material optoelectronics.

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“…Nevertheless, owing to the instability in light, heat, and moisture conditions, the practical applications of hybrid perovskites are still to be determined [7,8]. All inorganic perovskites, such as bismuth halide perovskite (Cs 3 Bi 2 X 9 , (X = I, Br, Cl)) and Pb-based perovskite (CsPbX 3 , (X = I, Br, Cl)), have been well regarded because of their high environmental stability [9][10][11][12]. The all-inorganic CsPbX 3 reveals a large absorption co-efficiency of ~2 × 10 5 cm −1 and a high carrier mobility of ~1000 cm 2 V −1 S −1 [13,14].…”

Section: Introductionmentioning

confidence: 99%

Growth of a Sub-Centimeter-Sized CsPbBr3 Bulk Single Crystal Using an Anti-Solvent Precipitation Method

2024

Symmetry

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A facile and low-cost strategy to fabricate CsPbBr3 single crystals is essential for developing perovskite optoelectronic devices. Herein, we have presented a room temperature anti-solvent precipitate method for growing sub-centimeter-sized CsPbBr3 single crystals. The as-prepared CsPbBr3 single crystal has an orthorhombic structure, and phase transition occurs as the measured temperature increases. The as-grown CsPbBr3 single crystal also shows abundant surface morphologies including footsteps, precipitated crystals, cracks, and pits. Subsequently, a metal–semiconductor–metal (MSM)-structured photodetector was fabricated based on the CsPbBr3 single crystal. Under 525 nm green light illumination, the photodetector exhibits an obvious response and the photocurrent linearly increases with the increase in the light intensity. The rise time of the photodetector increases from 0.82 s to 2.19 s as the light intensity is enhanced from 15 mW/cm2 to 160 mW/cm2, indicating that more time is required to reach to a stable photocurrent. However, the decay time is as fast as ~0.82 ms, irrelevant of the light intensity. The photocurrent, under continuous light illumination, was further studied and this indicates that a stronger light intensity can accelerate the attenuation of the device.

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Room temperature growth of CsPbBr3 single crystal for asymmetric MSM structure photodetector

Cited by 9 publications

References 38 publications

Kilogram-scale high-yield production of PbI₂ microcrystals for optimized photodetectors

Kilogram-scale high-yield production of PbI₂ microcrystals for optimized photodetectors

A voltage-driven dual-mode MoSe₂ photodetector with graphene as van der Waals contact

Growth of a Sub-Centimeter-Sized CsPbBr3 Bulk Single Crystal Using an Anti-Solvent Precipitation Method

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Room temperature growth of CsPbBr3 single crystal for asymmetric MSM structure photodetector

Cited by 9 publications

References 38 publications

Kilogram-scale high-yield production of PbI2 microcrystals for optimized photodetectors

Kilogram-scale high-yield production of PbI2 microcrystals for optimized photodetectors

A voltage-driven dual-mode MoSe2 photodetector with graphene as van der Waals contact

Growth of a Sub-Centimeter-Sized CsPbBr3 Bulk Single Crystal Using an Anti-Solvent Precipitation Method

Contact Info

Product

Resources

About

Kilogram-scale high-yield production of PbI₂ microcrystals for optimized photodetectors

Kilogram-scale high-yield production of PbI₂ microcrystals for optimized photodetectors

A voltage-driven dual-mode MoSe₂ photodetector with graphene as van der Waals contact