Room-Temperature Gating of Molecular Junctions Using Few-Layer Graphene Nanogap Electrodes

Prins, Ferry; Barreiro, Amelia; Ruitenberg, Justus W.; Seldenthuis, Johannes S.; Aliaga‐Alcalde, Núria; Vandersypen, L. M. K.; Zant, Herre S. J. van der

doi:10.1021/nl202065x

Cited by 311 publications

(425 citation statements)

References 34 publications

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“…However, stable nanogaps of 1-2 nm in few-layer graphene were formed through feedback-controlled electroburning, where heat due to the high current densities locally burns the graphene, and transport through contacted single molecules between the electrodes was measured [60][61][62]. Other approaches involved beam-based techniques like helium ion beam lithography [63], and arrays of graphene nanogaps (1-10 nm) were fabricated using e-beam lithography and oxygen plasma (Fig.…”

Section: Tunneling Across a Graphene Nanogapmentioning

confidence: 99%

Graphene nanodevices for DNA sequencing

2016

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Fast, cheap, and reliable DNA sequencing could be one of the most disruptive innovations of this decade as it will pave the way for personalised medicine. In pursuit of such technology, a variety of nanotechnology-based approaches have been explored and established including sequencing with nanopores. Due to its unique structure and properties, graphene provides interesting opportunities for the development of a new sequencing technology. In recent years, a wide range of creative ideas for graphene sequencers have been theoretically proposed and the first experimental demonstrations have begun to appear. Here, we review the different approaches to using graphene nanodevices for DNA sequencing, which involve DNA passing through graphene nanopores, nanogaps, and nanoribbons, and the physisorption of DNA on graphene nanostructures. We discuss the advantages and problems of each of these key techniques, and provide a perspective on the use of graphene in future DNA sequencing technology.

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Section: Tunneling Across a Graphene Nanogapmentioning

confidence: 99%

Graphene nanodevices for DNA sequencing

2016

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“…This method has previously been used to create nanoscale gaps in multiwalled carbon nanotubes and graphene 2, 5, 11, 12, 20. Due to the random nature of the electroburning process, if all part of the SWNT is suspended or adhered on the silicon substrate, the position of the gap in the SWNT is not well controlled.…”

Section: Resultsmentioning

confidence: 99%

“…Nanogap engineering of low‐dimensional nanomaterials has the potential to fulfill this need, provided their structures and properties at the moment of gap formation could be controlled, which has been of emerging interest in a variety of fields, ranging from molecular electronics to memories 2, 5, 6, 7, 8, 9, 10. Nanogaps also have wide applications in nanoelectromechanical switching (NEMS), where electrostatic forces are used to mechanically deflect an active element into physical contact with an electrode, thus changing the state of the device 11, 12, 13.…”

Section: Introductionmentioning

confidence: 99%

“…Recently, graphene nanogaps are created by feedback‐controlled electroburning at the position of hundreds of nanometers‐wide constrictions, which seems to be more reliable and precise than other approaches 2, 5, 20. Electroburning method has been used to create nanogaps in carbon nanotubes, which shows the disadvantage of uncontrollable position of the gaps 21.…”

Section: Introductionmentioning

confidence: 99%

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Nanogap‐Engineerable Electromechanical System for Ultralow Power Memory

Zhang

Deng

et al. 2017

Advanced Science

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Nanogap engineering of low‐dimensional nanomaterials has received considerable interest in a variety of fields, ranging from molecular electronics to memories. Creating nanogaps at a certain position is of vital importance for the repeatable fabrication of the devices. Here, a rational design of nonvolatile memories based on sub‐5 nm nanogaped single‐walled carbon nanotubes (SWNTs) via the electromechanical motion is reported. The nanogaps are readily realized by electroburning in a partially suspended SWNT device with nanoscale region. The SWNT memory devices are applicable for both metallic and semiconducting SWNTs, resolving the challenge of separation of semiconducting SWNTs from metallic ones. Meanwhile, the memory devices exhibit excellent performance: ultralow writing energy (4.1 × 10−19 J bit−1), ON/OFF ratio of 105, stable switching ON operations, and over 30 h retention time in ambient conditions.

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“…[1][2][3][4][5][6][7][8] Quasi-one-dimensional graphene nanoribbons have been experimentally obtained by cutting a graphene sheet into nanometer widths. 9 In particular, zigzag graphene nanoribbons (ZGNRs) have attracted intensive research interest because of their edge magnetism and unique transport properties, [10][11][12][13][14][15][16][17] which make them potential candidate materials for spintronic devices.…”

Section: Introductionmentioning

confidence: 99%

Nitrogen Doping Position-Dependent Rectification of Spin-Polarized Current and Realization of Multifunction in Zigzag Graphene Nanoribbons with Asymmetric Edge Hydrogenation

Wang

Zhang

Zhao

et al. 2015

Journal of Elec Materi

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The magnetic and spin transport properties of asymmetric edge-hydrogenated zigzag graphene nanoribbons (ZGNRs) selectively doped with nitrogen atoms were investigated using spin-polarized density functional theory and nonequilibrium Green's function. Results show that the rectifying performance of spin-polarized current with a ratio higher than 10 5 can be modulated by changing the positions of the nitrogen dopant. Complete spin filtering (100%) and excellent negative differential resistance behaviors were observed in the ZGNR junctions. These doping position-dependent spin transport characteristics were further tested by shifting from the odd-numbered zigzag-shaped C chains (N Z ) to the even-numbered N Z in ZGNRs. This study suggests that adopting a suitable nitrogen doping position could be an effective approach to significantly enhance the rectifying behavior of asymmetric edge-hydrogenated ZGNRs, which are promising materials for multifunctional spintronic devices.

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Room-Temperature Gating of Molecular Junctions Using Few-Layer Graphene Nanogap Electrodes

Cited by 311 publications

References 34 publications

Graphene nanodevices for DNA sequencing

Graphene nanodevices for DNA sequencing

Nanogap‐Engineerable Electromechanical System for Ultralow Power Memory

Nitrogen Doping Position-Dependent Rectification of Spin-Polarized Current and Realization of Multifunction in Zigzag Graphene Nanoribbons with Asymmetric Edge Hydrogenation

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