Room-Temperature Ferromagnetism in (Zn,Mn,Sn)As<sub>2</sub>Thin Films Applicable to InP-Based Spintronic Devices

Uchitomi, Naotaka; Oomae, Hiroto; Asubar, Joel T.; Endo, Hironori; Yang, Jinbo

doi:10.7567/jjap.50.05fb02

Cited by 4 publications

(4 citation statements)

References 18 publications

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“…Nevertheless, the crystal quality of the Cr-doped ZnSnAs 2 thin films was similar to that reported in Mn-doped ZnSnAs 2 thin films. 34) Moreover, the transmission electron diffraction spots from the ZnSnAs 2 :Cr layer shown in the inset indicated no splitting, suggesting that the ZnSnAs 2 :Cr crystal structure remained of zinc-blende type with no detectable secondary phases.…”

Section: Resultsmentioning

confidence: 93%

Epitaxial growth and characterization of Cr-doped ZnSnAs₂thin films on InP substrates

Oomae

Sheng

Shinoda

et al. 2020

Jpn. J. Appl. Phys.

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We have investigated the epitaxial growth of Cr-doped ZnSnAs 2 thin films as a function of Zn and Sn fluxes, and characterized their structural, electrical and magnetic properties for possible application in ZnSnAs 2 -based devices. Cr-doped ZnSnAs 2 thin films prepared using growth conditions favoring Cr atom substitution on Sn sites showed hole concentrations on the order of 10 17 cm −3 , but no detectable ferromagnetic properties. On the other hand, films prepared under growth conditions favoring Cr atom substitution on Zn sites, while exhibiting low (nondetectable) hole carrier concentrations, exhibited ferromagnetism even at room-temperature. Our present experimental results are consistent with those reported by Kizaki et al. where they predicted above-room-temperature ferromagnetism for Cr doping at Zn sites in the Cr-doped ZnSnAs 2 system. © 2020 The Japan Society of Applied Physics Experimental methodsCr-doped ZnSnAs 2 (ZnSnAs 2 :Cr) thin films were grown on semi-insulating epi-ready InP(001) substrates using

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Section: Resultsmentioning

confidence: 93%

Epitaxial growth and characterization of Cr-doped ZnSnAs₂thin films on InP substrates

Oomae

Sheng

Shinoda

et al. 2020

Jpn. J. Appl. Phys.

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“…Using the optimum substrate temperature of 300 °C and a Zn:Sn:As 4 beam equivalent pressure (BEP) ratio of 24:1:52, we grew a 100-nm-thick ZnSnAs 2 epitaxial film doped with 5.0% or 6.5% Mn on a 16-nm ZnSnAs 2 buffer layer. The detailed growth procedure of ZnSnAs 2 :Mn films on InP (001) has been published [9][10]. High-resolution X-ray diffraction (HR-XRD) measurements were performed to determine the lattice constant of the samples.…”

Section: Methodsmentioning

confidence: 99%

“…The magnetic ion Mn, which occupies the cation IV site in host chalcopyrite or zinc-blende (sphalerite) structures, has a local spin and at the same time acts as an acceptor. Very recently, ZnSnAs 2 :Mn thin films have been epitaxially grown on InP (001) without any secondary phases, and have shown room-temperature ferromagnetism [8][9][10]. Both experimentally and theoretically, ZnSnAs 2 is probably regarded as a "vertical GaAs" to some extent, consisting of two interposing zincblende lattices, while permitting a high degree of Mn incorporation because Mn 2+ ions may easily substitute on the group II Zn sites.…”

Section: Introductionmentioning

confidence: 99%

XAFS studies of diluted magnetic semiconductor Mn-doped ZnSnAs₂thin films on InP substrates

Oomae

Toyota

Emura³

et al. 2014

EPJ Web of Conferences

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Abstract. Mn-doped ZnSnAs 2 (ZnSnAs 2 :Mn) thin films with 5.0 and 6.5% Mn composition were epitaxially grown by molecular beam epitaxy on InP (001) substrates. These films had a Curie temperature of 334 K, corresponding to room-temperature ferromagnetism. The local structures around Mn atoms in ZnSnAs 2 :Mn were studied by analysis of the X-ray absorption fine-structure spectra. It was found that the Mn atoms substitute into Zn or Sn cation sites, and the Mn-As bond length is 2.50 Å, which is slightly smaller than the value of 2.53 Å in a sphalerite (zinc-blende) ZnSnAs 2 bulk crystal. The Mn-As bond length in ZnSnAs 2 :Mn is consistent with the value obtained from GaMnAs, and has a smaller value than that obtained from the zincblend MnAs thin films grown on a InP substrate.

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“…18) In recent years, Mn-doped ZnSnAs 2 thin films, hereafter referred to as (Zn,Sn,Mn)As 2 thin films, are of particular interest because of their ferromagnetic behaviour above room temperature and their promising compatibility with InP-based heterostructures. 11,19,20) Although the effects of molecular beam epitaxy (MBE) growth parameters on the crystalline quality of ZnSnP 2 21) and ZnSnAs 2 11,18,22) thin films were investigated by several research groups, there have been few studies on the epitaxial growth of Mn-doped chalcopyrites and sphalerites by MBE, probably owing to the complex growth parameters compared with those of II-VI-and III-V-based magnetic semiconductors.…”

Section: Introductionmentioning

confidence: 99%

Effects of cationic growth conditions of molecular beam epitaxy on ferromagnetic properties of Mn-doped ZnSnAs₂thin films

Ogo

Hidaka

Toyota

et al. 2017

Jpn. J. Appl. Phys.

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The effects of cationic growth parameters of molecular beam epitaxy on the crystalline and magnetic properties of Mn-doped ZnSnAs2, (Zn,Sn,Mn)As2, thin films were investigated in order to control ferromagnetism at room temperature. The combination of cationic beam equivalent pressures of Zn, Sn, and Mn atoms was varied at an optimal substrate temperature of 320 °C. Clear hysteresis loops were observed for the samples at 300 K, indicating ferromagnetism at room temperature. We found that the change in Zn flux does not significantly affect the composition of (Zn,Sn,Mn)As2 thin films and ferromagnetic properties and that ferromagnetic properties definitely depend on the amounts of Mn and Sn fluxes. X-ray photoelectron spectroscopy analysis revealed that the sum of the amounts of Mn2+ and Mn4+, which may contribute to the ferromagnetism in (Zn,Sn,Mn)As2 thin films, was approximately 60–70% of the total Mn amount with respect to ferromagnetic (Zn,Sn,Mn)As2 samples. This result indicates that the ferromagnetic properties could be controlled in multilayered (Zn,Sn,Mn)As2 by changing the combination of Zn, Sn, and Mn fluxes.

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Room-Temperature Ferromagnetism in (Zn,Mn,Sn)As₂Thin Films Applicable to InP-Based Spintronic Devices

Cited by 4 publications

References 18 publications

Epitaxial growth and characterization of Cr-doped ZnSnAs₂thin films on InP substrates

Epitaxial growth and characterization of Cr-doped ZnSnAs₂thin films on InP substrates

XAFS studies of diluted magnetic semiconductor Mn-doped ZnSnAs₂thin films on InP substrates

Effects of cationic growth conditions of molecular beam epitaxy on ferromagnetic properties of Mn-doped ZnSnAs₂thin films

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Room-Temperature Ferromagnetism in (Zn,Mn,Sn)As2Thin Films Applicable to InP-Based Spintronic Devices

Cited by 4 publications

References 18 publications

Epitaxial growth and characterization of Cr-doped ZnSnAs2thin films on InP substrates

Epitaxial growth and characterization of Cr-doped ZnSnAs2thin films on InP substrates

XAFS studies of diluted magnetic semiconductor Mn-doped ZnSnAs2thin films on InP substrates

Effects of cationic growth conditions of molecular beam epitaxy on ferromagnetic properties of Mn-doped ZnSnAs2thin films

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Room-Temperature Ferromagnetism in (Zn,Mn,Sn)As₂Thin Films Applicable to InP-Based Spintronic Devices

Epitaxial growth and characterization of Cr-doped ZnSnAs₂thin films on InP substrates

Epitaxial growth and characterization of Cr-doped ZnSnAs₂thin films on InP substrates

XAFS studies of diluted magnetic semiconductor Mn-doped ZnSnAs₂thin films on InP substrates

Effects of cationic growth conditions of molecular beam epitaxy on ferromagnetic properties of Mn-doped ZnSnAs₂thin films