Room-Temperature Ferromagnetism in Transparent Transition Metal-Doped Titanium Dioxide

Abstract

Dilute magnetic semiconductors and wide gap oxide semiconductors are appealing materials for magnetooptical devices. From a combinatorial screening approach looking at the solid solubility of transition metals in titanium dioxides and of their magnetic properties, we report on the observation of transparent ferromagnetism in cobalt-doped anatase thin films with theconcentration of cobalt between 0 and 8%. Magnetic microscopy images reveal a magnetic domain structure in the films, indicating the existence of ferromagnetic long-range ordering. The materials remain ferromagnetic above room temperature with a magnetic moment of 0.32 Bohr magnetons per cobalt atom. The film is conductive and exhibits a positive magnetoresistance of 60% at 2 kelvin.

Room temperature magnetic materials from nanostructured diblock copolymers

“…M agnetic materials remain under intense investigation as they are technologically important in many areas ranging from microelectronics to medicine [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16] . As a result, the continued discovery of new magnetic systems is of both fundamental scientific and practical importance.…”

Study The Electrical Properties of Co/TiO2 Multilayer Thin Films

“…The mechanism and origin of ferromagnetism and its reproducibility is still studied. Among the various oxides, Co doped TiO 2 is very attractive and one of the most prominent material [3,7]. This material shows ferromagnetism at room temperature, and it has a higher Curie temperature [3].…”

“…Transparent magnetic oxides have a high potentiality for fabricating future multifunctional spintronic devices according to the various technological reports and roadmaps [1][2][3][4][5]. One of the approaches in achieving this goal is the doping of transition magnetic (TM) material into transparent oxide [4][5][6].…”

“…In several cases, TM doped oxide such as Co doped ZnO, TiO 2 and SnO 2 etc. shows ferromagnetism at room temperature [5][6][7][8][9][10][11][12]. The mechanism and origin of ferromagnetism and its reproducibility is still studied.…”

Transport properties of a Ga1-xMn xAs/Ga1-yAl yAs double-barrier

“…In samples of Ga 1−x Mn x As with selective p−doping [12] it was reported a Curie temperature T c ∼ 172K. Today it is possible to make semiconductors that are ferromagnetic at room temperature [4][5][6][7]. Several spintronic devices like spin valves, spin filters, polarizers and analyzers have been made using heterostructures including DMS [8][9][10][11].…”