2014
DOI: 10.1166/sam.2014.1710
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Room Temperature Ferromagnetism in Si-Doped GaN Powders

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Cited by 6 publications
(2 citation statements)
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“…The weaker peak at 304 cm −1 is due to the disorder‐activated Raman scattering and/or V Ga . The broad peak at 420 cm −1 can be ascribed to nitrogen vacancies and/or interstitials that are expected to occur at high concentrations . The broad and asymmetric peak at 657 cm −1 can be assigned to a defect level below the GaN conduction band minimum …”
Section: Resultsmentioning
confidence: 99%
“…The weaker peak at 304 cm −1 is due to the disorder‐activated Raman scattering and/or V Ga . The broad peak at 420 cm −1 can be ascribed to nitrogen vacancies and/or interstitials that are expected to occur at high concentrations . The broad and asymmetric peak at 657 cm −1 can be assigned to a defect level below the GaN conduction band minimum …”
Section: Resultsmentioning
confidence: 99%
“…In this work, we report the structural, optical, and the magnetic properties of the GaN powders doped with Nd by a direct nitridation route at high temperature . The results show RT‐FM behavior of Nd‐doped GaN powders with a large effective magnetic moment.…”
Section: Introductionmentioning
confidence: 89%