Room-Temperature Fabricated Thin-Film Transistors Based on Compounds with Lanthanum and Main Family Element Boron

Abstract

For the first time, compounds with lanthanum from the main family element Boron (LaBx) were investigated as an active layer for thin-film transistors (TFTs). Detailed studies showed that the room-temperature fabricated LaBx thin film was in the crystalline state with a relatively narrow optical band gap of 2.28 eV. The atom ration of La/B was related to the working pressure during the sputtering process and the atom ration of La/B increased with the increase of the working pressure, which will result in the freer electrons in the LaBx thin film. LaBx-TFT without any intentionally annealing steps exhibited a saturation mobility of 0.44 cm2·V−1·s−1, which is a subthreshold swing (SS) of 0.26 V/decade and a Ion/Ioff ratio larger than 104. The room-temperature process is attractive for its compatibility with almost all kinds of flexible substrates and the LaBx semiconductor may be a new choice for the channel materials in TFTs.

Emergence of Impurity-Doped Nanocrystal Light-Emitting Diodes

“…In addition to synthesize stable impurity-doped nanocrystals, more attention needs to be paid to the careful manipulation of device engineering (e.g., using inorganic HTL and ETL, lowering charge injection barrier, improving charge balance, and reducing charge leakage) [ 360 , 361 , 362 , 363 ] and the introduction of advanced encapsulation technologies to avoid the moisture and oxygen (e.g., multilayer Al 2 O 3 and SiO 2 atomic layer deposition [ 364 ] and organic-inorganic multilayer structures [ 365 ] to reduce the water vapor transmission rate toward the ideal encapsulating barriers (10 −6 g −1 m −2 day −1 ) [ 366 ]). Upon loosening these bottlenecks, the prospect for mass production of impurity-doped nanocrystal LEDs will be undoubtedly bright and the proposed solutions are also conducive to the related optoelectronic fields (e.g., solar cells, lasers, photodetectors, sensors, X-ray imaging, and light communication) [ 367 , 368 , 369 , 370 , 371 , 372 ].…”

Recent Advances of Exciplex-Based White Organic Light-Emitting Diodes

“…For instance, the lifetime of hybrid WOLEDs can exceed >30,000 h at 1000 cd m −2 [209]. Particularly, as "warm-white" OLEDs have recently demonstrated with high efficiency and stability [210][211][212], it may be helpful to develop exciplex-based WOLEDs based on this technology, enhancing their potential in the optoelectronic applications [213][214][215]. Therefore, more stable donor and acceptor materials should be urgently explored.…”

Doping‐Free White Organic Light‐Emitting Diodes

“…Hence, much endeavors are needed to explore the stability mechanism of doping‐free WOLEDs, which only receives negligible attention to date. Particularly, since the tandem device architectures and warm‐white OLEDs have demonstrated with high efficiency and stability, these technologies may be conducive to realize stable doping‐free WOLEDs, enhancing their potential in the optoelectronic field . Additionally, it is deserved to point out that this personal account is mainly focused on the small‐molecule WOLEDs.…”