Room-Temperature Electron Spin Dynamics in Free-Standing ZnO Quantum Dots

Liu, William K.; Whitaker, Kelly; Smith, Alyssa L.; Kittilstved, Kevin R.; Robinson, Bruce H.; Gamelin, Daniel R.

doi:10.1103/physrevlett.98.186804

Cited by 121 publications

(120 citation statements)

References 18 publications

(33 reference statements)

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“…The development of diluted magnetic semiconductor (DMS) at the nanosized scale has attracted considerable attention, in particular due to the possibility of using the combined properties of carrier's charge and spin to modulate the response of the material driven by external applied fields [1][2][3]. The wide band-gap ZnO semiconductor is a very promising material template, not only because its crystal structure easily incorporates transition-ion magnetic impurities but also due to its application in optoelectronic devices such as ultraviolet light-emitting diodes, solar energy conversion, and lasers [4][5][6].…”

Section: Introductionmentioning

confidence: 99%

Raman investigation of ZnO and Zn1−xMnxO nanocrystals synthesized by precipitation method

Dantas¹,

Damigo²,

Qu³

et al. 2008

Journal of Non-Crystalline Solids

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Section: Introductionmentioning

confidence: 99%

Raman investigation of ZnO and Zn1−xMnxO nanocrystals synthesized by precipitation method

Dantas¹,

Damigo²,

Qu³

et al. 2008

Journal of Non-Crystalline Solids

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“…Relatively long spin-coherence times, 1-25 ns at 4 K and 0.19 ns at RT, were measured for free and donor-bound electrons in bulk and epitaxial ZnO, from time-resolved Faraday rotation [10] and spin noise spectroscopy [11]. An even longer spin coherence time of 25 ns was reported by Liu et al [12] for electrons in n-type colloidal quantum dots based on electron paramagnetic resonance spectroscopy. Effective-mass holes have been found to exhibit significantly faster spin relaxation, i.e.…”

Section: Introductionmentioning

confidence: 83%

Spin dynamics of isoelectronic bound excitons in ZnO

Chen

Buyanova

2014

Phys. Rev. B

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Time-resolved optical spin orientation is employed to study spin dynamics of I * and I * 1 excitons bound to isoelectronic centers in bulk ZnO. It is found that spin orientation at the exciton ground state can be generated using resonant excitation via a higher lying exciton state located at about 4 meV from the ground state. Based on the performed rate equation analysis of the measured spin dynamics, characteristic times of subsequent hole, electron, and direct exciton spin flips in the exciton ground state are determined as being τ s h = 0.4 ns, τ s e 15 ns, and τ s eh 15 ns, respectively. This relatively slow spin relaxation of the isoelectronic bound excitons is attributed to combined effects of (i) weak e-h exchange interaction, (ii) restriction of the exciton movement due to its binding at the isoelectronic center, and (iii) suppressed spin-orbit coupling for the tightly bound hole.

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“…This compound is also a promising candidate for spintronics applications (Janssen et al, 2008). ZnO quantum dots have shown long electron spin dephasing times even at room temperature (Liu et al, 2007) and have been successfully doped with magnetic ions (Kittilstved & Gamelin, 2006). In the future, the quantum dot ensemble used in this study may be replaced by sputtered ZnO quantum dots (Mayer et al, 2009), magnetically doped ZnO nanocrystals, or other UV emitters.…”

Section: Wwwintechopencommentioning

confidence: 99%