Room-temperature electroluminescence from Si microdisks with Ge quantum dots

Xia, Jinsong; Takeda, Yuuki; Usami, Noritaka; Maruizumi, Takuya; Shiraki, Y.

doi:10.1364/oe.18.013945

Cited by 55 publications

(25 citation statements)

References 12 publications

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“…Based on this effect, enhanced spontaneous emission has been observed in variety of material systems with optical cavities. By combining Ge QDs and optical cavities, it is possible to enhance the light emission efficiency significantly even in indirect band-gap materials [5]- [7].…”

Section: Introductionmentioning

confidence: 99%

(Invited) Electroluminescence from Micro-Cavities of Photonic Crystals, Micro-Disks and Rings Including Ge Dots Formed on SOI Substrates

Shiraki

Xia

et al. 2012

ECS Trans.

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We fabricated Si micro-cavities with Ge dots and successfully observed electroluminescence at room temperature. In the case of micro-disks, we observed both modes of whispering gallery modes and Fabry-Perot modes in photoluminescence, but the latter was found to be well eliminated from micro-rings. For photonic crystals, we observed systematic dependence of PL peaks on the structure parameters such as the diameter and period of air holes and crystal pattern. More than one thousand of Q-factor was observed in these photonic crystals. Well resolved electroluminescence peaks were observed both for micro-disks and photonic crystals at room temperature. However, the line width was found to be much broader than that of PL samples, probably due to the additional metal electrodes, oxide films and doping regions which are not included in PL samples. Moreover, the peak shift to higher energies coming from thermal treatment for diode fabrication was observed.

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Section: Introductionmentioning

confidence: 99%

(Invited) Electroluminescence from Micro-Cavities of Photonic Crystals, Micro-Disks and Rings Including Ge Dots Formed on SOI Substrates

Shiraki

Xia

et al. 2012

ECS Trans.

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“…Various PhC cavities have been utilized to enhance the light emission from Ge QDs and select emission wavelength [19]- [21]. Light emitters based on microcavities with Ge QDs reported before operate in multiple modes behavior in the telecom band [22]- [25]. However, single-mode-operated light sources are necessary for high-speed optical communication, high precision sensing, and optical imaging [26]- [29].…”

Section: Single-mode Emission From Ge Quantum Dotsmentioning

confidence: 99%

Single-Mode Emission From Ge Quantum Dots in Photonic Crystal Nanobeam Cavity

Zhang

Zeng

Zhang

et al. 2015

IEEE Photon. Technol. Lett.

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A freestanding one-dimensional photonic crystal nanobeam cavity embedded with Ge self-assembled quantum dots is designed and fabricated on a silicon-on-insulator substrate. Only one photoluminescence peak is observed in the wavelength range of 1000 to 1600 nm at room temperature. The emission peak dominates the photoluminescence spectrum over an almost flat and weak background emission, which indicates single-mode emission is realized in the proposed light emitter.

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“…Ge quantum dots (QDs) now attract more attention because of the great potential for device applications in microelectronics and optoelectronics, such as IR photodetectors [1,2], single electron devices [3], Si-based light emitters [4,5] and so on. The precise control of size, shape, density and site of Ge QDs is quite important to grow high-quality Ge QDs for such device applications.…”

Section: Introductionmentioning

confidence: 99%