Room-temperature electroluminescence at 1.3 and 1.5 μm from Ge/Si self-assembled quantum dots

Chang, Wen-Hao; Chou, A. T.; Chen, W. Y.; Chang, Hsiang-Szu; Hsu, T. M.; Pei, Zingway; Chen, P. S.; Lee, S. W.; Lai, Li-Shyue; Lu, Su-Tsai; Tsai, M. J.

doi:10.1063/1.1616665

Cited by 56 publications

(20 citation statements)

References 16 publications

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“…Probably, due to the low emission intensity, the internal quantum efficiency (QE) measured at room temperature for Ge/Si light emitting diode (LED) at 1.42 lm has been reported only in two studies with the following results: 5 · 10 -4 % [11] and 0.015% [13]. In one case [13] an external QE of 3.4 · 10 -4 % was measured for EL close to 1.5 lm. It should be mentioned that all publications mostly concentrate on QDs, i.e., on the hole subsystem.…”

Section: Introductionmentioning

confidence: 99%

“…The localization of electrons in the Ge/Si interface is mainly determined by the Coulomb interaction, i.e., by the indirect exciton binding energy, which is constant and equals 25 meV [36]. The latter value is close to kT at room temperature, making an observation of the QDSL band at room temperature quite difficult [8][9][10][11][12][13]26]. In our highly strained Sb-doped QDSLs the potential well for electrons is deeper due to the tensile strain-induced lowering of the conduction band.…”

Section: (A)mentioning

confidence: 99%

“…Concerning all available publications, only in Ref. [13] the J(j)-dependence in Ge/Si QD multilayer structures at 300 K was measured. At j < 20 A cm -2 the dependence was also found to be superlinear with a factor of 1.3.…”

Section: (A)mentioning

confidence: 99%

“…Although arrays of self-assembled Ge islands grown by the StranskiKrastanow mode on silicon have been studied quite intensively, just a few research teams have reported about PL [8,9] and electroluminescence (EL) data [10][11][12][13]. Probably, due to the low emission intensity, the internal quantum efficiency (QE) measured at room temperature for Ge/Si light emitting diode (LED) at 1.42 lm has been reported only in two studies with the following results: 5 · 10 -4 % [11] and 0.015% [13]. In one case [13] an external QE of 3.4 · 10 -4 % was measured for EL close to 1.5 lm.…”

Section: Introductionmentioning

confidence: 99%

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Miniband-related 1.4–1.8 μm luminescence of Ge/Si quantum dot superlattices

et al. 2006

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The luminescence properties of highly strained, Sb-doped Ge/Si multi-layer heterostructures with incorporated Ge quantum dots (QDs) are studied. Calculations of the electronic band structure and luminescence measurements prove the existence of an electron miniband within the columns of the QDs. Miniband formation results in a conversion of the indirect to a quasi-direct excitons takes place. The optical transitions between electron states within the miniband and hole states within QDs are responsible for an intense luminescence in the 1.4-1.8 lm range, which is maintained up to room temperature. At 300 K, a light emitting diode based on such Ge/Si QD superlattices demonstrates an external quantum efficiency of 0.04% at a wavelength of 1.55 lm.

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Section: Introductionmentioning

confidence: 99%

Section: (A)mentioning

confidence: 99%

Section: (A)mentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Miniband-related 1.4–1.8 μm luminescence of Ge/Si quantum dot superlattices

et al. 2006

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“…Many device applications were recently proposed (e.g., Si nanowire electrical interconnects [32,33], Si nanowire thermoelectric devices [34,35], Si nanowire sensors [36][37][38], SiGe cluster-based memory devices [39][40][41], SiGe cluster-based near-infrared light emitters [42][43][44][45][46], etc. ), and detailed understanding of thermal processes in these nanostructures is absolutely necessary.…”

mentioning

confidence: 99%

Thermal Properties and Heat Transport in Silicon‐Based Nanostructures

Chang

Tsybeskov

2010

Silicon Nanocrystals

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IntroductionFor the past 40 years, crystalline Si (c-Si) continues to be the major material for microelectronics, and modern silicon technology is superior compared to other semiconductors (e.g., II-VI and III-V compounds). In addition to the unique electronic and structural properties of bulk c-Si, silicon dioxide (SiO 2 ) and Si/SiO 2 interfaces, single-crystal Si possesses one of the best known lattice thermal conductivity [1,2]. This exceptional heat conductance is critically important for Si device heat management and circuit reliability. However, most of the modern complementary metal-oxide-semiconductor (CMOS) platforms are no longer single-crystal Si wafers but rather thin layers of Si-on-insulator (SOI), ultrathin strained Si and SiGe heterostructures that are the foundation of SiGe bipolar transistors (HBTs), and high-mobility metal-oxide-semiconductor field-effective transistors (MOSFETs). Major properties of these Si-based nanostructures are very different from those of bulk c-Si. For example, thermal conductivity in ultrathin SOI layers, SiGe alloys, and Si/SiGe nanostructures could be reduced by more than an order of magnitude compared to that in c-Si [3-6], and heat dissipation has become an important issue for modern nanoscale electronic devices and circuits. Thus, the understanding and improvement of heat management in Si-based nanostructures is critically important for the evolution of microelectronic industry.On the other hand, many interesting applications of nanostructured Si (ns-Si) in photonic devices and CMOS-compatible light emitters were recently discussed [7][8][9][10][11]. These ns-Si materials and devices can be produced by electrochemical anodization (i.e., porous Si [12]), chemical vapor deposition (CVD) using thermal decomposition of SiH 4 [13-15], Si ion implantation into a SiO 2 matrix [16], and deposition of amorphous Si/SiO 2 layers followed by thermal crystallization [17][18][19]. These ns-Si materials and devices produce an efficient and tunable light emission in the near-infrared and visible spectral region [20,21]. Also, it has been shown that under photoexcitation with energy density >10 mJ/cm 2 , optical gain is possibly Silicon Nanocrystals: Fundamentals, Synthesis and Applications. Edited by Lorenzo Pavesi and Rasit Turan

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Constructed Ge Quantum Dots and Sn Precipitate SiGeSn Hybrid Film with High Thermoelectric Performance at Low Temperature Region

Peng

Liu

et al. 2021

Advanced Energy Materials

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SiGe‐based thermoelectric (TE) materials are well‐known for high‐temperature utilization, but rarely relevant in the low temperature region. Here a Ge quantum dots (QDs) and Sn precipitation SiGeSn hybrid film are constructed via ultrafast high temperature annealing (UHA) of a treated P‐ion implantation SiGeSn film on Si/SiO2 substrate. Combining the modulation doping effect dominated by Sn precipitates and the energy filtering effect caused by Ge QDs, the optimized SiGe films achieve a giant power factor as high as 91 µW cm−1 K−2 @300 K, room temperature, while maintaining low thermal conductivity. This strategy on film construction provides a novel insight for TE materials with striking performance.

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Room-temperature electroluminescence at 1.3 and 1.5 μm from Ge/Si self-assembled quantum dots

Cited by 56 publications

References 16 publications

Miniband-related 1.4–1.8 μm luminescence of Ge/Si quantum dot superlattices

Miniband-related 1.4–1.8 μm luminescence of Ge/Si quantum dot superlattices

Thermal Properties and Heat Transport in Silicon‐Based Nanostructures

Constructed Ge Quantum Dots and Sn Precipitate SiGeSn Hybrid Film with High Thermoelectric Performance at Low Temperature Region

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