2015
DOI: 10.1186/s11671-015-0816-4
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Room-temperature electrically pumped near-infrared random lasing from high-quality m-plane ZnO-based metal-insulator-semiconductor devices

Abstract: Epitaxial m-plane ZnO thin films have been deposited on m-plane sapphire substrates at a low temperature of 200°C by atomic layer deposition. A 90° in-plane rotation is observed between the m-plane ZnO thin films and the sapphire substrates. Moreover, the residual strain along the ZnO [−12-10] direction is released. To fabricate metal-insulator-semiconductor devices, a 50-nm Al2O3 thin film is deposited on the m-plane ZnO thin films. It is interesting to observe the near-infrared random lasing from the metal-i… Show more

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Cited by 16 publications
(2 citation statements)
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“…4(c)) was fitted to two peaks at 530.2 and 531.3 eV (±0.1 eV). The peak located at 529.7 eV can be attributed to Zn-O bonds in a hexagonal array (wurtzite structure) [23], while the peak located at 531.3 eV can be attributed to oxygen deficient regions caused by oxygen vacancies in ZnO [24] [25] or loosely bound adsorbed oxygen species (H2O, O2 and oxygenated carbon impurities) [26]. These results are in good agreement with our Raman and XRD analyses.…”
Section: A Zno Materials Characterizationsupporting
confidence: 88%
“…4(c)) was fitted to two peaks at 530.2 and 531.3 eV (±0.1 eV). The peak located at 529.7 eV can be attributed to Zn-O bonds in a hexagonal array (wurtzite structure) [23], while the peak located at 531.3 eV can be attributed to oxygen deficient regions caused by oxygen vacancies in ZnO [24] [25] or loosely bound adsorbed oxygen species (H2O, O2 and oxygenated carbon impurities) [26]. These results are in good agreement with our Raman and XRD analyses.…”
Section: A Zno Materials Characterizationsupporting
confidence: 88%
“…4 b). After deconvolution, two symmetric peaks appeared at 529.81 and 531.57 eV, corresponding to the Zn–O–Zn and surface –OH species 35 , 48 , respectively. The O 1 s XPS spectra of WO 3 were found at 529.89, 531.94 and 533.84 eV, belonging to the lattice oxygen, oxygen-absorbing H 2 O/adsorb oxides and surface –OH groups, respectively 49 , 50 .…”
Section: Resultsmentioning
confidence: 99%