Room Temperature Direct and Heterodyne Detection of 0.28–0.69-THz Waves Based on GaN 2-DEG Unipolar Nanochannels

Daher, Carlos; Torres, J.; Íñiguez-de-la-Torre, I.; Nouvel, P.; Varani, L.; Sangare, P.; Ducournau, Guillaume; Gaquière, C.; Matéos, J.; González, T.

doi:10.1109/ted.2015.2503987

Cited by 29 publications

(23 citation statements)

References 14 publications

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“…An enhancement of S is observed when biasing the device at 45 µA. Note that the values are in good agreement with the estimation of the analytical model, shown by lines [5]. Fig.…”

Section: Experimetal Responsivitysupporting

confidence: 87%

“…2. Measurements were carried out using a vector network analyzer model PNA X N5244A from Keysight Technologies, in the frequency range between 10 MHz and 43.5 GHz (but the results presented can be extended to the near THz range [5,6]) and a semiconductor characterization system model 4200 SCS from Keithley. The SSDs were contacted using coplanar probes in the groundsignal-ground (GSG) configuration to ensure a good microwave coupling.…”

Section: Device and Experimental Setupmentioning

confidence: 99%

See 1 more Smart Citation

Microwave detection up to 43.5 GHz by GaN nanodiodes: Experimental and analytical responsivity

Sánchez-Martín

Garcia-Perez

et al. 2017

2017 Spanish Conference on Electron Devices (CDE)

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Planar nano-diodes fabricated on an AlGaN/GaN heterolayer have been measured, showing capability to detect microwave signals up to 43.5 GHz at room temperature. A single nano-diode with length L=1000 nm and width W=74 nm provides a response of approximately 55 mV DC output for a 0 dBm nominal input power at 1 GHz, with a very small fraction of the RF power reaching effectively the device due to a very large impedance mismatch. A comprehensive analytical study, which uses as input data just the measured DC current-voltage curve of the diodes, is able to replicate the values of the RF characterization and allows a deep understanding of the detection mechanism.

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“…An enhancement of S is observed when biasing the device at 45 µA. Note that the values are in good agreement with the estimation of the analytical model, shown by lines [5]. Fig.…”

Section: Experimetal Responsivitysupporting

confidence: 87%

Section: Device and Experimental Setupmentioning

confidence: 99%

Microwave detection up to 43.5 GHz by GaN nanodiodes: Experimental and analytical responsivity

Sánchez-Martín

Garcia-Perez

et al. 2017

2017 Spanish Conference on Electron Devices (CDE)

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“…In spite of these efforts, nowadays, the development of compact room temperature, tunable and low-cost powerful THz sources is still a challenge. From our experience in fabricating and characterizing sub-THz devices [22][23][24][25], we have learnt that once a given device potentially exhibiting high frequency oscillations has been fabricated, it is very difficult to experimentally confirm their presence. In some cases, the AC power generated is too small, in others the oscillations take place at too high frequencies, so that their detection becomes difficult.…”

Section: Introductionmentioning

confidence: 99%

Comprehensive characterization of Gunn oscillations in In_0.53Ga_0.47As planar diodes

Lechaux

Íñiguez-de-la-Torre

Novoa-López

et al. 2020

Semicond. Sci. Technol.

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In this work, In 0.53 Ga 0.47 As planar Gunn diodes specifically designed for providing oscillations at frequencies below 30 GHz have been fabricated and characterized. Different types of measurements were used to define a set of consistent methods for the characterization of the oscillations that can be extended to the sub-THz frequency range. First, negative differential resistance and a current drop are found in the I-V curve, indicating the potential presence of Gunn oscillations (GOs), which is then confirmed by means of a vector network analyzer, used to measure both the S 11 parameter and the noise power density. The onset of unstable GOs at applied voltages where the negative differential resistance is hardly visible in the I-V curve is evidenced by the observation of a noise bump at very low frequency for the same applied voltage range. Subsequently, the formation of stable oscillations with an almost constant frequency of 8.8 GHz is observed for voltages beyond the current drop. These results have been corroborated by measurements performed with a spectrum analyzer, which are fully consistent with the findings achieved by the other techniques, all of them applicable to Gunn diodes oscillating at much higher frequencies, even above 300 GHz.

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“…Zero-bias detectors based on AlGaN/GaN HEMTs have been demonstrated using nanoscale devices, such as selfswitching diodes (SSDs) presenting very high-frequency operation (up to hundreds of GHz) [19]- [21], as well as in lateral field-effect diodes (L-FEDs) showing excellent detection capabilities (responsivity in the order of thousands of V −1 ) [10], [22]- [24]. Devices based on GaN HEMT structures presenting concurrently good detection and frequency capabilities would expand the portfolio of RF devices for GaN MMICs.…”

Section: Introductionmentioning

confidence: 99%

Broadband Zero-Bias RF Field-Effect Rectifiers Based on AlGaN/GaN Nanowires

Santoruvo

Nikoo

Matioli

2020

IEEE Microw. Wireless Compon. Lett.

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Microwave zero-bias rectifiers are fast devices capable of rectifying RF signals without applied bias, which have applications ranging from RF power detection to THz imaging systems. Here we present gated nanowire field-effect rectifiers (NW-FERs) fabricated with a process compatible with other RF devices on a standard AlGaN-GaN High Electron Mobility Transistor (HEMT) platform as a new potential RF zero-bias diode. Signal rectification relies on the electrostatic modulation of the gated-NW carrier concentration, which is optimized by a judicious NW width design. NW-FERs presented a large curvature (30.1 V −1), close to the theoretical limit (38.7 V −1) for ideal Schottky diodes, and an excellent trade-off between a flat frequency response, up to a few tens of GHz, and a large responsivity (3000 V/W). The compatible fabrication process and the very good results provide a promising high-performance zerobias diode architecture that could be integrated on AlGaN/GaN microwave monolithic integrated circuits (MMICs).

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Room Temperature Direct and Heterodyne Detection of 0.28–0.69-THz Waves Based on GaN 2-DEG Unipolar Nanochannels

Cited by 29 publications

References 14 publications

Microwave detection up to 43.5 GHz by GaN nanodiodes: Experimental and analytical responsivity

Microwave detection up to 43.5 GHz by GaN nanodiodes: Experimental and analytical responsivity

Comprehensive characterization of Gunn oscillations in In_0.53Ga_0.47As planar diodes

Broadband Zero-Bias RF Field-Effect Rectifiers Based on AlGaN/GaN Nanowires

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Room Temperature Direct and Heterodyne Detection of 0.28–0.69-THz Waves Based on GaN 2-DEG Unipolar Nanochannels

Cited by 29 publications

References 14 publications

Microwave detection up to 43.5 GHz by GaN nanodiodes: Experimental and analytical responsivity

Microwave detection up to 43.5 GHz by GaN nanodiodes: Experimental and analytical responsivity

Comprehensive characterization of Gunn oscillations in In0.53Ga0.47As planar diodes

Broadband Zero-Bias RF Field-Effect Rectifiers Based on AlGaN/GaN Nanowires

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Product

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Comprehensive characterization of Gunn oscillations in In_0.53Ga_0.47As planar diodes