Room-temperature continuous-wave lasing from stacked InAs/GaAs quantum dots grown by metalorganic chemical vapor deposition

Heinrichsdorff, F.; Mao, Ming; Kirstaedter, N.; Krost, A.; Bimberg, D.; Kosogov, A. O.; Werner, P.

doi:10.1063/1.120556

Cited by 314 publications

(136 citation statements)

References 15 publications

(13 reference statements)

Supporting

Mentioning

130

Contrasting

Unclassified

Order By: Relevance

“…One improvement in this respect might be a tailoring of the overgrowth layer. An overgrowth layer has been shown to increase the capture efficiency [10]. Further out in the supply chain of carriers to the active region, there must also be a finite capture time of carriers from the barriers into the WL.…”

Section: Modelmentioning

confidence: 99%

Ultrafast gain recovery and modulation limitations in self-assembled quantum-dot devices

Berg

Bischoff

Magnúsdóttir

et al. 2001

IEEE Photon. Technol. Lett.

221

View full text Add to dashboard Cite

. Ultrafast gain recovery and modulation limitations in self-assembled quantum-dot devices. I E E E Photonics Technology Letters, 13(6) Abstract-Measurements of ultrafast gain recovery in self-assembled InAs quantum-dot (QD) amplifiers are explained by a comprehensive numerical model. The QD excited state carriers are found to act as a reservoir for the optically active ground state carriers resulting in an ultrafast gain recovery as long as the excited state is well populated. However, when pulses are injected into the device at high-repetition frequencies, the response of a QD amplifier is found to be limited by the wetting-layer dynamics.Index Terms-Gain recovery, quantum-dot amplifiers, ultrafast.

show abstract

Section: Modelmentioning

confidence: 99%

Ultrafast gain recovery and modulation limitations in self-assembled quantum-dot devices

Berg

Bischoff

Magnúsdóttir

et al. 2001

IEEE Photon. Technol. Lett.

221

View full text Add to dashboard Cite

show abstract

“…[1][2][3][4][5][6][7][8][9][10][11][12][13][14] SAQDs are the result of a transition from 2D growth to 3D growth in strained epitaxial films such as Si x Ge 1Àx =Si and In x Ga 1Àx As/GaAs: This process is known as Stranski-Krastanow growth or VolmerWebber growth. 3,[15][16][17] In applications, order of SAQDs is a key factor.…”

Section: Introductionmentioning

confidence: 99%

Predicting and Understanding Order of Heteroepitaxial Quantum Dots

Friedman

2007

Journal of Elec Materi

View full text Add to dashboard Cite

Heteroepitaxial self-assembled quantum dots (SAQDs) will allow breakthroughs in electronics and optoelectronics. SAQDs are a result of Stranski-Krastanow growth, whereby a growing planar film becomes unstable after an initial wetting layer is formed. Common systems are Ge x Si 1Àx =Si and In x Ga 1Àx As/GaAs: For applications, SAQD arrays need to be ordered. The roles of crystal anisotropy, random initial conditions and thermal fluctuations in influencing SAQD order during early stages of SAQD formation are studied through a simple stochastic model of surface diffusion. Surface diffusion is analyzed through a linear and perturbatively non-linear analysis. The role of crystal anisotropy in enhancing SAQD order is elucidated. It is also found that SAQD order is enhanced when the deposited film is allowed to evolve at heights near the critical wetting surface height that marks the onset of non-planar film growth.

show abstract

“…Later, various approaches were employed to achieve improvements of laser characteristics by MOVPE. The first MOVPE-grown QD lasers used either an InAs QD stack [58] or an In0.5Ga0.5As QD stack [59].…”

Section: Quantum Dot Lasermentioning

confidence: 99%

Vertical-external-cavity surface-emitting lasers and quantum dot lasers

Shan¹,

Zhao²,

Hu³

et al. 2012

Front. Optoelectron.

View full text Add to dashboard Cite

The use of cavity to manipulate photon emission of quantum dots (QDs) has been opening unprecedented opportunities for realizing quantum functional nanophotonic devices and also quantum information devices. In particular, in the field of semiconductor lasers, QDs were introduced as a superior alternative to quantum wells to suppress the temperature dependence of the threshold current in vertical-external-cavity surface-emitting lasers (VECSELs). In this work, a review of properties and development of semiconductor VECSEL devices and QD laser devices is given. Based on the features of VECSEL devices, the main emphasis is put on the recent development of technological approach on semiconductor QD VECSELs. Then, from the viewpoint of both single QD nanolaser and cavity quantum electrodynamics (QED), a single-QD-cavity system resulting from the strong coupling of QD cavity is presented. A difference of this review from the other existing works on semiconductor VECSEL devices is that we will cover both the fundamental aspects and technological approaches of QD VECSEL devices. And lastly, the presented review here has provided a deep insight into useful guideline for the development of QD VECSEL technology and future quantum functional nanophotonic devices and monolithic photonic integrated circuits (MPhICs).

show abstract

Room-temperature continuous-wave lasing from stacked InAs/GaAs quantum dots grown by metalorganic chemical vapor deposition

Cited by 314 publications

References 15 publications

Ultrafast gain recovery and modulation limitations in self-assembled quantum-dot devices

Ultrafast gain recovery and modulation limitations in self-assembled quantum-dot devices

Predicting and Understanding Order of Heteroepitaxial Quantum Dots

Vertical-external-cavity surface-emitting lasers and quantum dot lasers

Contact Info

Product

Resources

About