Room temperature chemical vapor deposition of c-axis ZnO

Barnes, Teresa M.; Leaf, Jacquelyn; Fry, C.; Wolden, Colin A.

doi:10.1016/j.jcrysgro.2004.10.015

Cited by 113 publications

(62 citation statements)

References 22 publications

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“…Further AZO films have good stability over hydrogen plasma. 9 Thin films of ZnO have been deposited by using several deposition techniques, such as magnetron sputtering, 10,11 pulsed laser deposition, 12 chemical vapor deposition, 13 spray pyrolysis, 14,15 and sol-gel method. [16][17][18][19][20] The sol-gel process is one of the attractive techniques for film deposition because of low equipment cost, non vacuum requirement, low temperature processing, easy to dope and also offers the possibility of preparing large area coating.…”

Section: Introductionmentioning

confidence: 99%

Properties of ZnO:Al Films Prepared by Spin Coating of Aged Precursor Solution

Shrestha¹,

Ghimire²,

Nakarmi³

et al. 2010

Bulletin of the Korean Chemical Society

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Transparent conducting undoped and Al impurity doped ZnO films were deposited on glass substrate by spin coat technique using 24 days aged ZnO precursor solution with solution of ethanol and diethanolamine. The films were characterized by UV-Visible spectroscopy, X-ray diffraction (XRD), scanning electron microscope (SEM), electrical resistivity (ρ), carrier concentration (n), and hall mobility (µ) measurements. XRD data show that the deposited film shows polycrystalline nature with hexagonal wurtzite structure with preferential orientation along (002) crystal plane. The SEM images show that surface morphology, porosity and grain sizes are affected by doping concentration. The Al doped samples show high transmittance and better resistivity. With increasing Al concentration only mild change in optical band gap is observed. Optical properties are not affected by aging of parent solution. A lowest resistivity (8.5 × 10 -2 ohm cm) is observed at 2 atomic percent (at.%) Al. With further increase in Al concentration, the resistivity started to increase significantly. The decrease resistivity with increasing Al concentration can be attributed to increase in both carrier concentration and hall mobility.

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Section: Introductionmentioning

confidence: 99%

Properties of ZnO:Al Films Prepared by Spin Coating of Aged Precursor Solution

Shrestha¹,

Ghimire²,

Nakarmi³

et al. 2010

Bulletin of the Korean Chemical Society

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“…Different degrees of growth depends on substrate type and plasma exposure time. The prefered orientation of ZnO films synthesized by different techniques on different substrates were investigated on different literatures [8,9]. The most preferred is the (002) plane, due to its densest atomic packing and minimum surface energy.…”

Section: Summary Of Resultsmentioning

confidence: 99%

Synthesis of ZnO Nanostructures Using Domestic Microwave Oven Based Remote Plasma Deposition System

T¹,

Rajeevkumar²

2012

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“…Because of these excellent properties, Zinc oxide is used applications such as solar cells, biosensors, gas sensors, optoelectronic devices, transducers [2][3][4][5], liquid crystals display, light emitting diodes [6], visible light and UV photo-detectors [7,8]. ZnO layers have been grown by using different deposition techniques such as sol-gel, spin coating method [9], reactive evaporation [10], chemical vapor deposition (CVD) [11], magnetron sputtering [12], and atomic layer deposition (ALD) [13]. In the recent years, there has remarkable interest to deposit ZnO thin films using atomic layer deposition.…”

Section: Introductionmentioning

confidence: 99%

Atomic Layer Deposition Grown Zinc-Oxide Based MIS-Type Schottky Barrier Diode

Kaymak¹,

Efil²,

Seven³

et al. 2018

Preprint

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Abstract:We report on the fabrication and electrical characteristics of zinc-oxide (ZnO) based metal-insulator-semiconductor (MIS) type Schottky barrier diodes (SBHs). ZnO thin layer on the p-type silicon substrate was fabricated by atomic layer deposition (ALD). The structure and surface properties of the thin film were characterized by X-ray diffraction (XRD), atomic force microscope (AFM) and secondary ion mass spectrometer (SIMS). The current-voltage (I-V) characteristics of Al/ALD-grown ZnO/p-Si diodes were measured under dark at room temperature. The electrical parameters such as ideality factor (n), series resistance (R s ) and barrier height ( b ) of the diodes were analyzed using standard thermionic emission (TE) theory, Norde and Cheung method. The barrier height value obtained from I-V and Cheung method was found to be 0.73 eV and 0.76 eV, respectively. The interface state density (Dit) of the diodes was determined from the I-V characteristics. The nonideal behavior of measured parameters suggested the presence of interface states. The obtained results showed that the prepared diode can be used for NIR Schottky photodetector applications.

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Room temperature chemical vapor deposition of c-axis ZnO

Cited by 113 publications

References 22 publications

Properties of ZnO:Al Films Prepared by Spin Coating of Aged Precursor Solution

Properties of ZnO:Al Films Prepared by Spin Coating of Aged Precursor Solution

Synthesis of ZnO Nanostructures Using Domestic Microwave Oven Based Remote Plasma Deposition System

Atomic Layer Deposition Grown Zinc-Oxide Based MIS-Type Schottky Barrier Diode

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