Room-temperature blue-green emission from InGaN/GaN quantum dots made by strain-induced islanding growth

Damilano, B.; Grandjean, N.; Dalmasso, S.; Massies, J.

doi:10.1063/1.125444

Cited by 118 publications

(92 citation statements)

References 19 publications

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“…9 The possible role of V-shaped pit defects in circumventing carrier dislocations and preventing nonradiative recombination has also been discussed. 10 In order to control and fully exploit the advantages of carrier localization, several groups reported the controlled fabrication of self-assembled InGaN quantum dots [11][12][13][14][15][16] (QDs) and GaN QDs, [17][18][19][20][21][22][23] making use of the lattice-mismatch-induced Stranski-Krastanov growth mode. Due to the presence of strong compressive strain, a film of a few monolayers (ML) of GaN(InGaN) on AlN(GaN) tends to relax elastically via the formation of three-dimensional (3D) islands interconnected by a thin ($1 to 2 ML), highly strained twodimensional (2D) wetting layer.…”

Section: à3mentioning

confidence: 99%

“…As a result, the excitons trapped in QDs are expected to be much more insensitive to nonradiative recombination than are those in QW structures. [11][12][13]24,25 The aim of this paper is to give better insight into how the structural differences between InGaN/GaN and GaN/AlN QW and QD superlattices (SLs) affect the luminescence stability, and consequently the IQE, of III-nitride quantum confined structures.…”

Section: à3mentioning

confidence: 99%

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Internal quantum efficiency of III-nitride quantum dot superlattices grown by plasma-assisted molecular-beam epitaxy

Gačević

Das

Teubert

et al. 2011

Journal of Applied Physics

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We present a study of the optical properties of GaN/AlN and InGaN/GaN quantum dot (QD) superlattices grown via plasma-assisted molecular-beam epitaxy, as compared to their quantum well (QW) counterparts. The three-dimensional/two-dimensional nature of the structures has been verified using atomic force microscopy and transmission electron microscopy. The QD superlattices present higher internal quantum efficiency as compared to the respective QWs as a result of the three-dimensional carrier localization in the islands. In the QW samples, photoluminescence (PL) measurements point out a certain degree of carrier localization due to structural defects or thickness fluctuations, which is more pronounced in InGaN/GaN QWs due to alloy inhomogeneity. In the case of the QD stacks, carrier localization on potential fluctuations with a spatial extension smaller than the QD size is observed only for the InGaN QD-sample with the highest In content (peak emission around 2.76 eV). These results confirm the efficiency of the QD three-dimensional confinement in circumventing the potential fluctuations related to structural defects or alloy inhomogeneity. PL excitation measurements demonstrate efficient carrier transfer from the wetting layer to the QDs in the GaN/AlN system, even for low QD densities ($10 10 cm À3). In the case of InGaN/GaN QDs, transport losses in the GaN barriers cannot be discarded, but an upper limit to these losses of 15% is deduced from PL measurements as a function of the excitation wavelength.

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Section: à3mentioning

confidence: 99%

Section: à3mentioning

confidence: 99%

Internal quantum efficiency of III-nitride quantum dot superlattices grown by plasma-assisted molecular-beam epitaxy

Gačević

Das

Teubert

et al. 2011

Journal of Applied Physics

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“…Since QDs, grown under the SK growth mode, are formed to release internal strain energy, it is assumed that self-organized QDs have weaker internal strain fields than the WL. 8 This difference causes the In content within the WL to start drifting towards the QDs under the effect of a strain induced migration. 9 Thus, the low In concentration peak is attributed to the WL and the high In concentration peak is attributed to the QDs.…”

Section: Methodsmentioning

confidence: 99%

Reduced thermal quenching in indium-rich self-organized InGaN/GaN quantum dots

ElAfandy

Cha

et al. 2012

Journal of Applied Physics

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CitationElAfandy RT, Ng TK, Cha D, Zhang M, Bhattacharya P, et al. (2012) Differences in optical and structural properties of indium rich (27%), indium gallium nitride (InGaN) self-organized quantum dots (QDs), with red wavelength emission, and the two dimensional underlying wetting layer (WL) are investigated. Temperature dependent micro-photoluminescence (lPL) reveals a decrease in thermal quenching of the QDs integrated intensity compared to that of the WL. This difference in behaviour is due to the 3-D localization of carriers within the QDs preventing them from thermalization to nearby traps causing an increase in the internal quantum efficiency of the device. Excitation power dependent lPL shows a slower increase of the QDs PL signal compared to the WL PL which is believed to be due to the QDs saturation. V C 2012 American Institute of Physics.[http://dx

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“…Meanwhile, steady progress has been made in improving methods for growing GaN quantum dots through spontaneous self-assembly, notably by Jean Massies and coworkers. 16 Creating nanometer-sized crystallites of GaN may open new doors for studying light-matter interaction in "artificial atoms," a subject anticipated to be rich both in basic physics and in applications to short-wavelength light emitters.…”

Section: Future Expectationsmentioning

confidence: 99%

Blue Diode Lasers

2000

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The recent achievement of compact blue-emitting gallium nitride semiconductor lasers is likely to have far-reaching technological and commercial effects. The lasers' short wavelengths—around 400 nm, half that of gallium arsenide-based lasers—permit higher spatial resolution in applications such as optical storage and printing. And the high photon energy will open up new applications for these inexpensive, compact light sources. An aesthetic satisfaction with these devices stems from finally extending the existing and mature semiconductor laser technology for the near-infrared and red to encompass the “new frontier” blue and near-ultraviolet regions, thereby bridging the entire visible spectrum. At the same time, there are significant research opportunities arising from a plethora of poorly understood microscopic issues in the underlying material system, which include such fundamental properties as charge control, transport, and formation of optical gain for stimulated emission.

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Room-temperature blue-green emission from InGaN/GaN quantum dots made by strain-induced islanding growth

Cited by 118 publications

References 19 publications

Internal quantum efficiency of III-nitride quantum dot superlattices grown by plasma-assisted molecular-beam epitaxy

Internal quantum efficiency of III-nitride quantum dot superlattices grown by plasma-assisted molecular-beam epitaxy

Reduced thermal quenching in indium-rich self-organized InGaN/GaN quantum dots

Blue Diode Lasers

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