Room-temperature atomic layer deposition of ZrO2 using tetrakis(ethylmethylamino)zirconium and plasma-excited humidified argon

Kanomata, Kensaku; Tokoro, Kentaro; Imai, T.; Pansila, P. Pungboon; Miura, Masashi; Ahmmad, Bashir; Kubota, Shigeru; Hirahara, Kazuro; Hirose, Fumihiko

doi:10.1016/j.apsusc.2016.06.122

Cited by 28 publications

(14 citation statements)

References 31 publications

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“…During process (a), the plasma generator was kept in the off‐mode, whereas in the combined process (b) and (c) a plasma power of 180 W was used. In the following, the combined process is referred to as “comb‐process.” Compared with the previously reported H 2 O‐based PEALD, the sequence of the H 2 O pulse and plasma ignition in the comb‐process is different because plasma ignition was always subsequent to the H 2 O pulse.…”

Section: Methodsmentioning

confidence: 82%

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Al₂O₃ Thin Films Prepared by a Combined Thermal‐Plasma Atomic Layer Deposition Process at Low Temperature for Encapsulation Applications

Zhu

Merdes

Ylivaara

et al. 2019

Physica Status Solidi (a)

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In this article, a combined H 2 O thermal atomic layer deposition of Al 2 O 3 with in situ N 2 plasma treatment process at 90 C for encapsulation applications is reported. The effect of process parameters on the growth behavior and properties of Al 2 O 3 thin films, such as elemental composition, residual stress, moisture permeation barrier ability, density, and roughness, is investigated. Optimization of plasma exposure time gives films with a low impurity (%3.8 at% for hydrogen, %0.17 at% for carbon, and %0.51 at% for nitrogen), a high mass density (%3.1 g cm À3 ), and a low tensile residual stress (%160 MPa). A water vapor transmission rate of 2.9 Â 10 À3 g m À2 day À1 is obtained for polyethylene naphthalate substrates coated with 4-nm-thick Al 2 O 3 films.

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Section: Methodsmentioning

confidence: 82%

“…Plasma‐enhanced atomic layer deposition (PEALD) is popular as a successful method for the growth of high‐quality thin films at low temperature. For instance, many oxides, such as Al 2 O 3 , SiO 2 , TiO 2 , HfO 2 , and ZrO 2 , can be prepared by PEALD using O 2 , CO 2 , and N 2 O gases or H 2 O vapor …”

Section: Introductionmentioning

confidence: 99%

Al₂O₃ Thin Films Prepared by a Combined Thermal‐Plasma Atomic Layer Deposition Process at Low Temperature for Encapsulation Applications

Zhu

Merdes

Ylivaara

et al. 2019

Physica Status Solidi (a)

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“…In both Z and ZH groups, the strongest O 1s peak was observed near 530.0 eV, which corresponds to ZrO 2 ( Figure 6A ).The shape of the Zr 3d peaks observed in the Z and ZH groups suggested that zirconium was oxidized to Zr (IV) on the sample surface regardless of heat treatment ( Figure 6B ). 16 The difference in bond energy between O1s and Zr3d 5/2 was about 347.0 eV, similar to the difference in the oxidation of the bulk of zirconium. 17 Therefore, the sample surface appears to contain mainly ZrO 2 .…”

Section: Resultsmentioning

confidence: 61%

“…The shape of the Zr 3d peaks observed in the Z and ZH groups suggested that zirconium was oxidized to Zr (IV) on the sample surface regardless of heat treatment (Figure 6B). 16 The difference…”

Section: Surface Characteristicsmentioning

confidence: 99%

Atomic Layer Deposition of ZrO2 on Titanium Inhibits Bacterial Adhesion and Enhances Osteoblast Viability

Jo¹,

Kim²,

Cho³

et al. 2021

IJN

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Purpose The study was intended to create a uniform zirconia layer even on the surface of complex structures via atomic layer deposition (ALD). The impact of crystalline zirconia deposited by ALD on bacterial adhesion and osteoblast viability was assessed via surface treatment of dental implants. Methods Amorphous zirconia was deposited using an atomic layer deposition reactor (Atomic Classic, CN1, Hwaseong, Korea) on titanium discs. Heating the samples at 400°C resulted in crystallization. Samples were divided into three groups: the control group, the group carrying amorphous ALD-zirconia (Z group), and the heat-treated group following zirconia ALD deposition (ZH group).The surface of each sample was analyzed, followed by the assessment of adhesion of Streptococcus mutans and Porphyromonas gingivalis , and viability and differentiation of MC3T3-E1 cells. Results The adhesion of S. mutans and P. gingivalis was significantly reduced in the Z and ZH groups compared with the control group (P < 0.05). The viability of MC3T3-E1 cells was significantly increased in the ZH group compared with the control group (P < 0.001), while no significant differences were observed in the Z group (P > 0.05). Differentiation of MC3T3-E1 cells showed a marginally significant increase in the ZH group compared with the control group (P < 0.1), while no significant differences were found in the Z group (P > 0.1). Conclusion Compared with the pure titanium group, the groups that were coated with zirconia via ALD showed a decreased adhesion of S. mutans during the early stages of biofilm formation and P. gingivalis adhesion inducing peri-implantitis, and an increase in MC3T3-E1 cell viability and differentiation. The findings indicate the possibility of treating the implant surface to reduce peri-implantitis and improve osseointegration.

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“…Nevertheless, the surface chemistry of the H2O plasma involved ALD Al2O3 process is more complex since both H2O molecule [74][75][76] and OH radicals, [77][78][79][80] which are generated during H2O plasma dissociation reactions (in Table 4), can be regarded as oxidants. The reaction of the first ALD half-cycle can be described as Equation (4), while the reaction of the second ALD half-cycle can be considered as a combination of Equation (6) and (7).…”

Section: Silicon Dioxidementioning

confidence: 99%

Residual stress study of thin films deposited by atomic layer deposition

Zhu

Salmi

Virtanen

2017

2017 IEEE 12th International Conference on ASIC (ASICON)

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Room-temperature atomic layer deposition of ZrO2 using tetrakis(ethylmethylamino)zirconium and plasma-excited humidified argon

Cited by 28 publications

References 31 publications

Al₂O₃ Thin Films Prepared by a Combined Thermal‐Plasma Atomic Layer Deposition Process at Low Temperature for Encapsulation Applications

Al₂O₃ Thin Films Prepared by a Combined Thermal‐Plasma Atomic Layer Deposition Process at Low Temperature for Encapsulation Applications

Atomic Layer Deposition of ZrO2 on Titanium Inhibits Bacterial Adhesion and Enhances Osteoblast Viability

Residual stress study of thin films deposited by atomic layer deposition

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Room-temperature atomic layer deposition of ZrO2 using tetrakis(ethylmethylamino)zirconium and plasma-excited humidified argon

Cited by 28 publications

References 31 publications

Al2O3 Thin Films Prepared by a Combined Thermal‐Plasma Atomic Layer Deposition Process at Low Temperature for Encapsulation Applications

Al2O3 Thin Films Prepared by a Combined Thermal‐Plasma Atomic Layer Deposition Process at Low Temperature for Encapsulation Applications

Atomic Layer Deposition of ZrO2 on Titanium Inhibits Bacterial Adhesion and Enhances Osteoblast Viability

Residual stress study of thin films deposited by atomic layer deposition

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Al₂O₃ Thin Films Prepared by a Combined Thermal‐Plasma Atomic Layer Deposition Process at Low Temperature for Encapsulation Applications

Al₂O₃ Thin Films Prepared by a Combined Thermal‐Plasma Atomic Layer Deposition Process at Low Temperature for Encapsulation Applications