Room temperature annealing of SnS2 films with electron impulse force

Al-Mamun, Nahid Sultan; Wolfe, Douglas E.; Haque, Aman; Yim, Jae-Gyun; Kim, Seong Keun

doi:10.1016/j.scriptamat.2022.115107

Cited by 6 publications

(4 citation statements)

References 33 publications

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“…The detailed mechanism of defect mitigation by high‐density current‐induced EWF can be found elsewhere. [ 58–63 ] As a result of partial recovery of radiation damage, the electrical propesrties of the electropulsed TFTs improve as discussed earlier.…”

Section: Resultsmentioning

confidence: 97%

Mitigating Heavy Ion Irradiation‐Induced Degradation in p‐type SnO Thin‐Film Transistors at Room Temperature

Al-Mamun

Rasel

Wolfe

et al. 2023

Physica Status Solidi (a)

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The study investigates the mitigation of radiation damage on p‐type SnO thin film transistors (TFTs) with a fast, room temperature annealing process. Atomic layer deposition was utilized to fabricate bottom‐gate TFTs of high‐quality p‐type SnO layers. After 2.8 MeV Au4+ irradiation at a fluence level of 5.2x1012 ions/cm2, the output drain current and on/off current ratio (Ion/Ioff) decreased by more than one order of magnitude, field‐effect mobility (μFE) reduced more than four times, and sub‐threshold swing (SS) increased more than 4 times along with a negative shift in threshold voltage. The observed degradation is attributed to increased surface roughness and defect density, as confirmed by scanning electron microscopy (SEM), high resolution micro‐Raman, and transmission electron microscopy (TEM) with geometric phase analysis (GPA). We demonstrate a technique to recover the device performance at room temperature and in less than a minute, using the electron wind force (EWF) obtained from low duty cycle high density pulsed current. At a pulsed current density of 4.0x105 A/cm2, we observed approximately four times increase in Ion/Ioff, 41% increase in μFE, and 20% decrease in the SS of the irradiated TFTs suggesting effectiveness of the new annealing technique.This article is protected by copyright. All rights reserved.

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Section: Resultsmentioning

confidence: 97%

Mitigating Heavy Ion Irradiation‐Induced Degradation in p‐type SnO Thin‐Film Transistors at Room Temperature

Al-Mamun

Rasel

Wolfe

et al. 2023

Physica Status Solidi (a)

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“…Since an increase would be expected only within a few minority carrier diffusion lengths of the contact if recombination-enhanced annealing were occurring, we propose that an alternative carrier-induced mechanism is present During forward biasing, holes are injected from the p-type NiO, while electrons flow toward the top contact from the heavility doped substrate. This process is analgous to the EWF mechanism, wherein the momentum of the electrons facilitates defect annealing [49][50][51][52][53][54][55][56][57][58][59][60]. This mechanism is almost athermal, as evidenced by precise measurements of the device temperature during the application of pulsed currents at low duty cycles near room temperature [50].…”

Section: Resultsmentioning

confidence: 99%

“…Thirdly, Electron Wind Force (EWF) annealing occurs by electron momentum transfer to enhance defect annealing kinetics [49][50][51][52][53][54][55][56][57][58][59][60]. The mechanical force originates from the use of a high current density at a low duty cycle to suppress heat accumulation.…”

Section: Introductionmentioning

confidence: 99%

Forward bias annealing of proton radiation damage in NiO/Ga₂O₃ rectifiers

Li,

Chiang,

Wan

et al. 2024

Phys. Scr.

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17 MeV proton irradiation at fluences from 3–7 × 1013 cm−2 of vertical geometry NiO/β-Ga2O3 heterojunction rectifiers produced carrier removal rates in the range 120–150 cm−1 in the drift region. The forward current density decreased by up to 2 orders of magnitude for the highest fluence, while the reverse leakage current increased by a factor of ∼20. Low-temperature annealing methods are of interest for mitigating radiation damage in such devices where thermal annealing is not feasible at the temperatures needed to remove defects. While thermal annealing has previously been shown to produce a limited recovery of the damage under these conditions, athermal annealing by minority carrier injection from NiO into the Ga2O3 has not previously been attempted. Forward bias annealing produced an increase in forward current and a partial recovery of the proton-induced damage. Since the minority carrier diffusion length is 150–200 nm in proton irradiated Ga2O3, recombination-enhanced annealing of point defects cannot be the mechanism for this recovery, and we suggest that electron wind force annealing occurs.

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“…The detailed fundamental mechanism behind EWF annealing is given in [25]. Previously, high-density current-induced EWF has been reported to be effective to improve crystallinity and performance of GaN high-electron mobility transistors [26], 2D materials [27] and devices [28], metal thin film [29], and bulk alloys [30,31]. This low-temperature defect mitigation technique could be a potential efficient alternative to high-temperature annealing of electronic devices by reducing the time, energy, and process complexity.…”

Section: Introductionmentioning

confidence: 99%

Improving vertical GaN p–n diode performance with room temperature defect mitigation

Sultan Al-Mamun,

Gallagher,

Jacobs

et al. 2023

Semicond. Sci. Technol.

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Defect mitigation of electronic devices is conventionally achieved using thermal annealing. To mobilize the defects, very high temperatures are necessary. Since thermal diffusion is random in nature, the process may take a prolonged period of time. In contrast, we demonstrate a room temperature annealing technique that takes only a few seconds. The fundamental mechanism is defect mobilization by atomic scale mechanical force originating from very high current density but low duty cycle electrical pulses. The high-energy electrons lose their momentum upon collision with the defects, yet the low duty cycle suppresses any heat accumulation to keep the temperature ambient. For a 7 × 105 A cm−2 pulsed current, we report an approximately 26% reduction in specific on-resistance, a 50% increase of the rectification ratio with a lower ideality factor, and reverse leakage current for as-fabricated vertical geometry GaN p–n diodes. We characterize the microscopic defect density of the devices before and after the room temperature processing to explain the improvement in the electrical characteristics. Raman analysis reveals an improvement in the crystallinity of the GaN layer and an approximately 40% relaxation of any post-fabrication residual strain compared to the as-received sample. Cross-sectional transmission electron microscopy (TEM) images and geometric phase analysis results of high-resolution TEM images further confirm the effectiveness of the proposed room temperature annealing technique to mitigate defects in the device. No detrimental effect, such as diffusion and/or segregation of elements, is observed as a result of applying a high-density pulsed current, as confirmed by energy dispersive x-ray spectroscopy mapping.

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Room temperature annealing of SnS2 films with electron impulse force

Cited by 6 publications

References 33 publications

Mitigating Heavy Ion Irradiation‐Induced Degradation in p‐type SnO Thin‐Film Transistors at Room Temperature

Mitigating Heavy Ion Irradiation‐Induced Degradation in p‐type SnO Thin‐Film Transistors at Room Temperature

Forward bias annealing of proton radiation damage in NiO/Ga₂O₃ rectifiers

Improving vertical GaN p–n diode performance with room temperature defect mitigation

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Room temperature annealing of SnS2 films with electron impulse force

Cited by 6 publications

References 33 publications

Mitigating Heavy Ion Irradiation‐Induced Degradation in p‐type SnO Thin‐Film Transistors at Room Temperature

Mitigating Heavy Ion Irradiation‐Induced Degradation in p‐type SnO Thin‐Film Transistors at Room Temperature

Forward bias annealing of proton radiation damage in NiO/Ga2O3 rectifiers

Improving vertical GaN p–n diode performance with room temperature defect mitigation

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Forward bias annealing of proton radiation damage in NiO/Ga₂O₃ rectifiers