2014
DOI: 10.1016/j.cap.2014.10.019
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Room-temperature and solution-processed vanadium oxide buffer layer for efficient charge injection in bottom-contact organic field-effect transistors

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Cited by 9 publications
(4 citation statements)
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“…[182] Vanadium oxide-based layers, however, can be deposited in ambient air conditions at low temperatures. [183] For example, vanadium pentoxide (V 2 O 5 ) layers have been reported to result in high-quality thin films without the need for any post-treatment processes.…”
Section: O 5 In Oscsmentioning
confidence: 99%
“…[182] Vanadium oxide-based layers, however, can be deposited in ambient air conditions at low temperatures. [183] For example, vanadium pentoxide (V 2 O 5 ) layers have been reported to result in high-quality thin films without the need for any post-treatment processes.…”
Section: O 5 In Oscsmentioning
confidence: 99%
“…The reversible phase transition in vanadium oxide system triggers significant changes in thermo-optical and electrical properties. Since, unlike other vanadium oxide analogues VO 2 has its phase transition temperature much closer to room temperature it has potential applications in the fields of storage devices [6], switching devices [7], smart windows [8], field effect transistors [9] and antireflective smart coatings [10]. Further, it has been reported recently [10][11][12] that VO 2 based thin films could offer a smart, efficient and radiative thermal control characteristic for spacecraft application.…”
Section: Introductionmentioning
confidence: 99%
“…Solution-processing of the metal oxide interfacial layers has shown significant promise for reducing the complexity of the deposition of these materials. Previous studies have shown that vanadium oxide can be deposited from solution at low temperature in air without the need for any high temperature post-deposition treatments [ 24 , 25 , 26 , 27 , 28 ]. On the other hand, some optoelectronic devices which are fabricated at high temperatures require developed metal oxides which must be able to keep their properties under high temperature fabrication processes.…”
Section: Introductionmentioning
confidence: 99%