Room Temperature 3.5-&lt;inline-formula&gt; &lt;tex-math notation="LaTeX"&gt;$\mu \text{m}$ &lt;/tex-math&gt; &lt;/inline-formula&gt; Mid-Infrared InAs Photovoltaic Detector on a Si Substrate

Khai, Loke Wan; Hua, Tan Kian; Li, Daosheng; Wicaksono, Satrio; Fatt, Yoon Soon

doi:10.1109/lpt.2016.2564979

Cited by 11 publications

(2 citation statements)

References 10 publications

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“…To achieve the same performance, the enhanced device only needs a voltage bias of −0.05 V, indicating lower power supply consumption for the enhanced device. The achieved room-temperature performance is super ior to those for the reported bare devices without integration of metallic patterns [20,[25][26][27][28][29][30].…”

Section: Resultsmentioning

confidence: 89%

Elliptical cylinder metallic array for enhancing room-temperature midwave infrared photodetection

Tong

Suo

Zhang

2019

J. Phys. D: Appl. Phys.

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Metasurface, from periodical and artificial structures of "meta-atoms" constructed by subwavelength-sized metallic resonators, has been incorporated with optoelectronic devices to realize improved and multifunctional performance. Here, we report a fourfold rotationallysymmetric elliptical cylinder metasurface for enhancing photodetection in midwave infrared (2-5 µm) range. This metasurface has the capability to confine light within small volume and polarization-independence property. Enhanced photodetector consisting of this metasurface and an InAsSb-based heterojunction photodiode is fabricated and evaluated in detail. Polarizationindependent improvement for performance is achieved. A 4-fold specific detectivity (D * ) improvement (to 3.3×10 9 Jones) compared to that of a reference photodiode is achieved for room-temperature operation. Electrically controlled enhancement for the enhanced device is observed with a maximum enhancement factor of 6 (600%) for photocurrent (or responsivity).The enhanced photodiode has response speed similar to that of the reference.

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Section: Resultsmentioning

confidence: 89%

Elliptical cylinder metallic array for enhancing room-temperature midwave infrared photodetection

Tong

Suo

Zhang

2019

J. Phys. D: Appl. Phys.

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“…PLEASE CITE THIS ARTICLE AS DOI: 10.1063/5.0022235 layer 14 to accommodate the large lattice mismatch between InAs and Si. This led to the subsequent demonstration of a room temperature InAs p-i-n photodetector.…”

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confidence: 99%

Mid-infrared type-II InAs/InAsSb quantum wells integrated on silicon

Delli

Hodgson

Bentley

et al. 2020

Applied Physics Letters

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Direct integration of III-V semiconductor light sources on silicon is an essential step towards the development of portable, on-chip infrared sensor systems. Driven by the presence of characteristic molecular fingerprints in the mid-infrared spectral region, such systems may have a wide range of applications in infrared imaging, gas sensing and medical diagnostics. This paper reports on the integration of an InAs virtual substrate and high crystalline quality InAs/InAsSb multi-quantum wells on Si using a three-stage InAs/GaSb/Si buffer layer. It is shown that the InAs/GaSb interface demonstrates a strong dislocation filtering effect. A series of strained AlSb/InAs dislocation filter superlattices were also used, resulting in a low surface dislocation density of approximately 4 × 10 7 cm -2 . The InAs/InAsSb wells exhibited strong photoluminescence signal at elevated temperatures.Analysis of these results indicate that radiative recombination is the dominant recombination mechanism, making this structure promising for fabricating MIR Si-based sensor systems.The presence of fundamental vibration absorption bands of several gaseous species in the 2 to 12 μm mid-infrared (MIR) electromagnetic spectral region presents high technological potential for a wide range of applications, including absorption spectroscopy, environmental monitoring, chemical sensing and medical diagnostics. MIR silicon (Si) photonics has attracted great interest due to its potential to realize lab-on-chip optoelectronic systems. Si wafers have numerous advantageous properties, such as their large area, improved robustness and low cost. 1 Fabrication _____________________________

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InAs0.9Sb0.1-based hetero-p-i-n structure grown on GaSb with high mid-infrared photodetection performance at room temperature

Tong

Tobing

et al. 2018

J Mater Sci

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Room Temperature 3.5-<inline-formula> <tex-math notation="LaTeX">$\mu \text{m}$ </tex-math> </inline-formula> Mid-Infrared InAs Photovoltaic Detector on a Si Substrate

Cited by 11 publications

References 10 publications

Elliptical cylinder metallic array for enhancing room-temperature midwave infrared photodetection

Elliptical cylinder metallic array for enhancing room-temperature midwave infrared photodetection

Mid-infrared type-II InAs/InAsSb quantum wells integrated on silicon

InAs0.9Sb0.1-based hetero-p-i-n structure grown on GaSb with high mid-infrared photodetection performance at room temperature

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