Room-temperature 1.3 μm electroluminescence from strained Si1−<i>x</i>Ge<i>x</i>/Si quantum wells

Mi, Q.; Xiao, X.; Sturm, James C.; Lenchyshyn, L. C.; Thewalt, M. L. W.

doi:10.1063/1.106734

Cited by 70 publications

(14 citation statements)

References 17 publications

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“…Internal PL quantum efficiencies as high as 3 1 % have been achieved at 4 K from strained layers grown at 400 OC by MBE and subsequently annealed at 600 OC [16]. Recently, Mi et al [17] have achieved roomtemperature electroluminescence at 1.3 p and 1.5 pn from strained Sil-xGex quantum wells. The internal quantum efficiency at 1.3 p was estimated to be > 2~l O -~.…”

Section: -Iedm 92mentioning

confidence: 97%

Luminescence from Si-based structures

Campbell¹,

Li²,

Цай³

1992

International Technical Digest on Electron Devices Meeting

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While numerous luminescence effects have been reported for Si-based materials, with few exceptions the efficiencies have been extremely low. Recent breakthroughs in this area such as the observation of strong, roomtemperature visible emission from porous Si have stimulated research on light emission from column IV materials. This paper reviews some of the accomplishments that may presage the development of Si-based light emitters.

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Section: -Iedm 92mentioning

confidence: 97%

Luminescence from Si-based structures

Campbell¹,

Li²,

Цай³

1992

International Technical Digest on Electron Devices Meeting

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“…Light emitting diodes and detectors are essential devices for this -application. An avalanche diode and a SiGe/Si p-i-n diode have been used as a light emitter to serve this purpose [1,2]. In this paper, a MOS tunneling diode biased at the accumulation region is used as a light emitting device and a MOS tunneling diode biased at the inversion region is used as a photodetector.…”

Section: Introductionmentioning

confidence: 99%

Light emission and detection by metal oxide silicon tunneling diodes

Liu

Lee

Lin

et al.

International Electron Devices Meeting 1999. Technical Digest (Cat. No.99CH36318)

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Both NMOS and PMOS light-emitting diodes and photodetectors are demonstrated. For the ultrathin gate oxide, the tunneling gate of metal oxide silicon (MOS) diodes can be utilized as both emitters for light emitting devices and collectors for light detectors. An electron-hole plasma model is used to fit the emission spectra. A surface band bending is responsible for the bandgap reduction in electroluminescence (EL) from the MOS tunneling diode. The dark current of the photodetectors is limited by the thermal generation of minority carrier in the inversion layer. The high growth temperature(l000"C) of the oxide can reduce the dark current to a level as low as 3nAlcm2.

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“…Excellent photoluminescence ͑PL͒ and electroluminescence ͑EL͒ characteristics have been demonstrated by previous authors. [1][2][3][4][5][6][7][8] A more abrupt compositional transience of the Si 1Ϫx Ge x /Si interface is expected in GS-grown QWs, owing to the reduced Ge segregation at the hetero-interface, 5 than in those grown by SSMBE where Ge segregation has been recognized as a cornerstone issue. 9 Another advantage for GSMBE is that uniform thickness and composition can be obtained without sample rotation.…”

Section: Introductionmentioning

confidence: 98%

Postgrowth of a Si contact layer on an air-exposed Si1−xGex/Si single quantum well grown by gas-source molecular beam epitaxy, for use in an electroluminescent device

Kato

Fukatsu

Shiraki

1995

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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A Si contact layer for an electroluminescent (EL) diode was successfully grown on a Si1−xGex/Si single quantum well (SQW) layer by ‘‘hybrid’’ Si molecular beam epitaxy (MBE). The ‘‘hybrid’’ MBE was performed by growing the Si contact layer in a solid-source MBE chamber after transferring the sample through air from a gas-source MBE (GSMBE) chamber in which the starting SQW layer was initially grown by using disilane (Si2H6) and germane (GeH4). The growth characteristics of the hybrid MBE were investigated by in situ monitoring of the reflection high energy electron diffraction. A (2×1) reconstruction was observed even after the sample was exposed to air for up to 15 h on a GSMBE-prepared Si(100) surface. Evidence of the excellent quality of the EL device was provided by the sharpest emission lines, a full width at half maximum of ≊5.5 meV. The spectral features of the EL and photoluminescence were found to be almost identical, and a well-resolved acoustic phonon replica was observed. Linear polarization for a no-phonon replica of EL was also observed along SQW plane.

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Room-temperature 1.3 μm electroluminescence from strained Si1−xGex/Si quantum wells

Cited by 70 publications

References 17 publications

Luminescence from Si-based structures

Luminescence from Si-based structures

Light emission and detection by metal oxide silicon tunneling diodes

Postgrowth of a Si contact layer on an air-exposed Si1−xGex/Si single quantum well grown by gas-source molecular beam epitaxy, for use in an electroluminescent device

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