Röntgenfluoreszenzanalyse mit Synchrotronstrahlung

Gaul, G.; Knöchel, A.

doi:10.1007/978-3-642-78858-1_6

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Recording a line profile across ion‐implanted conductor paths in Si wafers by a synchrotron beam microprobe

et al. 2002

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Synchrotron radiation was applied to recording a line profile across buried conductive paths in a silicon h100i wafer. For that purpose, Co ions were first implanted in a depth of 60 nm below the silicon surface with a dose of 10 17 cm −2 and an energy of 100 keV. By means of a photoresist mask, small strips of ca 150 and 40 µm width were produced. The analytical characterization was performed at DESY/HASYLAB by concentrating the synchrotron beam with a cylindrical and a tapered capillary with an effective diameter of 10 and 4 µm, respectively. The implanted wafer was shifted in steps of 1 µm on a straight line along a capillary in order to record a line profile of the implanted element cobalt across the buried strips. An internal standard was used in order to compensate for the large long-term drift and the strong fluctuations of the synchrotron beam. A 0.1 µm thin Ti foil turned out to be a very simple standard easily placed in front of the implanted wafer. This aid facilitates an examination of buried layers with a flank down to only micrometer steepness and with a uniform plateau down to only 1% deviations.

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