Roll-to-roll fabrication and metastability in metal oxide transistors

Jackson, Warren B.; Kim, Hanjun; Kwon, O–Kyun; Yeh, Bao; Hoffman, Randy; Mourey, Devin A.; Koch, Tim; Taussig, Carl; Elder, Richard; Jeans, Albert

doi:10.1117/12.874180

Cited by 7 publications

(4 citation statements)

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“…The individual layers and structures of the device are patterned by smartly switching etch processes, opening one layer after the other using the just opened layer as etch mask and the next layer as etch stop. As an example, individual and arrays of bottom‐gate transistors with amorphous silicon and transition metal oxides as active layer have been made on a web of 50 μm thick PI 153, 156. A UV‐curable resist is thereby patterned with a PDMS mold wrapped around a drum replicated from a patterned Si master.…”

Section: Nanoimprint Lithographymentioning

confidence: 99%

Influence of growing system on nitrate accumulation in two varieties of lettuce and red radicchio of Treviso

et al. 2011

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Section: Nanoimprint Lithographymentioning

confidence: 99%

Influence of growing system on nitrate accumulation in two varieties of lettuce and red radicchio of Treviso

et al. 2011

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“…an e-paper display [5]. This device has integrated a backplane using a-Si TFT of bottom gate type, but even now, the related research and development has been no longer in progress.…”

Section: Introductionmentioning

confidence: 99%

Advanced Top-Down Fabrication Process of A-IGZO TFT for Roll-to-Roll Backplane

Kim

Choi²,

Kim³

et al. 2018

IEICE Trans. Electron.

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Amorphous indium-gallium-zinc-oxide (a-IGZO) thin film transistor (TFT) was fabricated by an advanced self-aligned imprint lithography (ASAIL) method with a hybrid etching process. The SAIL is a top-down method to fabricate a TFT using a three-dimensional multilayer etch mask having all pattern information for the TFT. The hybrid etching process was newly applied in the original SAIL process for the purpose of reducing plasma damage of a-IGZO channel layer during plasma etching in the ASAIL process. This research demonstrated that the a-IGZO TFT could be successfully fabricated by the ASAIL process. In particular, the hybrid etching process applied in this paper can be utilized for the back-channeletch type a-IGZO TFT and further extended for the roll-to-roll backplane process.

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“…However, it is only suitable to produce single-layered structures, and it is challenging to build up subsequent layers aligned with existing structures. The problem of layer-to-layer alignment on flexible substrates can be solved using a 3D self-aligned imprint lithography (SAIL) by encoding all geometric information required for all patterning steps into a monolithic 3D mask that is imprinted on a thin film stack deposited on a flexible substrate [12][13][14]. Since the monolithic mask (normally made of polymers) itself also distorts with the substrate, alignment is preserved throughout subsequent processing.…”

Section: Introductionmentioning

confidence: 99%

A review of thin-film transistors/circuits fabrication with 3D self-aligned imprint lithography

Chu

2017

Flex. Print. Electron.

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Nanoimprint lithography (NIL) is a promising method for the fabrication of micro/nanostructures through a simple, low-cost, and high throughput process. Imprinted 2D structure with high resolution has been demonstrated successfully for certain applications including magnetic hard disks and optical gratings. Manufacturing low-cost electronic devices that require patterned multi-layers with NIL is very challenging, particularly for those requiring different patterns. In recent years, considerable effort has been made using the self-aligned imprinting technique, opening an alternative way to develop and fabricate complementary flexible electronics. In this paper we review thin film transistor (TFT) fabrication with 3D self-aligned imprint lithography (SAIL), which enables the patterning and alignment of submicron features on meter-scale flexible substrates in the roll-to-roll configuration. The 3D SAIL solves the problem of precision interlayer registry of devices on a moving web by encoding all geometric information required for all device patterning steps into a monolithic imprinted 3D structure.

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Roll-to-roll fabrication and metastability in metal oxide transistors

Cited by 7 publications

References 0 publications

Influence of growing system on nitrate accumulation in two varieties of lettuce and red radicchio of Treviso

Influence of growing system on nitrate accumulation in two varieties of lettuce and red radicchio of Treviso

Advanced Top-Down Fabrication Process of A-IGZO TFT for Roll-to-Roll Backplane

A review of thin-film transistors/circuits fabrication with 3D self-aligned imprint lithography

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