2021
DOI: 10.1103/physrevlett.126.256402
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Roles of the Narrow Electronic Band near the Fermi Level in 1TTaS2 -Related Layered Materials

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Cited by 31 publications
(29 citation statements)
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“…To the best of our knowledge, this is the first observation of a superconducting transition in 4 Hb -TaSe 2 . A similar enhancement of superconductivity has also been reported in similar structures of 4 Hb -TaS 2 and 6 R -TaS 2 very recently. , Furthermore, the magnetic anisotropy of 4 Hb -TaSe 2 is characterized by the upper critical field in-plane ( H c2 ∥ ) to out-of-plane ( H c2 ⊥ ) ( H c2 ∥ / H c2 ⊥ = 7.5) ratio, which is significantly enhanced by about 3 times compared to the bulk 2 H -TaSe 2 . The details can be found in Figure S4.…”
supporting
confidence: 83%
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“…To the best of our knowledge, this is the first observation of a superconducting transition in 4 Hb -TaSe 2 . A similar enhancement of superconductivity has also been reported in similar structures of 4 Hb -TaS 2 and 6 R -TaS 2 very recently. , Furthermore, the magnetic anisotropy of 4 Hb -TaSe 2 is characterized by the upper critical field in-plane ( H c2 ∥ ) to out-of-plane ( H c2 ⊥ ) ( H c2 ∥ / H c2 ⊥ = 7.5) ratio, which is significantly enhanced by about 3 times compared to the bulk 2 H -TaSe 2 . The details can be found in Figure S4.…”
supporting
confidence: 83%
“…Recently, the emerging natural bulk TMD VDWHs that share configurations similar to those of 2D VDWHs are ideal systems suitable for such studies. They are alternately stacked with octahedral ( T ) layers with CDW order and trigonal-prismatic ( H ) layers with superconductivity and different CDW orders. Pressure is a clean, continuous, and reversible way to regulate the interlayer coupling by changing the interlayer distance without introducing any chemical impurities into VDWHs. , Pressure has also been broadly applied in bulk TMD systems to tune the electronic properties associated with the CDW states and superconductivity. …”
mentioning
confidence: 99%
“…Thus, the Ru SACs@FeCo-LDH formed generates new electronic states near the Fermi level, suggesting a more conductive electronic structure. 36 This can be further shown by the partial density of states (PDOS) caused by the change of the electronic structure of Co, Fe, and Ru (Fig. S22, ESI†).…”
mentioning
confidence: 88%
“…In the differential conductance (d I /d V ) spectra measured with STM, there are insulating gaps for both surface terminations, and the Type-I surface has a slightly larger insulating gap than that on the Type-II surface 13 . It has recently been demonstrated that the insulating gap on the Type-I surface is an interlayer-dimerization-induced insulating gap and the smaller insulating gap on the Type-II surface is likely a Mott-insulating gap 18 , 19 .
Fig.
…”
Section: Introductionmentioning
confidence: 99%