Role of weak interlayer coupling in ultrafast exciton-exciton annihilation in two-dimensional rhenium dichalcogenides

Sim, Sangwan; Lee, Doeon; Lee, Jekwan; Cha, Myungjun; Cha, Soonyoung; Heo, Wonhyeok; Cho, Sungjun; Shim, Wooyoung; Lee, Kyusang; Yoo, Jinkyoung; Prasankumar, R. P.; Choi, Hyunyong; Jo, Moon Ho

doi:10.1103/physrevb.101.174309

Cited by 25 publications

(21 citation statements)

References 59 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The influence of relative valley positions has been studied by comparing TMD multilayer structures. EEA efficiency decreases with increasing layer number in materials where indirect excitons become dominant [10], while the trend is weaker as long as the material remains direct [13]. We therefore expect that intrinsic EEA is less efficient in tungsten-based TMD monolayers than in MoS 2 .…”

mentioning

confidence: 92%

“…The discussion of Auger-like exciton-exciton annihilation (EEA) in TMDs has been started by the works of Sun et al [8] and Kumar et al [9]. Since then, a range of EEA coefficients from several 10 −3 cm 2 s −1 to about 0.1 cm 2 s −1 have been found experimentally for different TMD materials [8][9][10][11][12][13][14]. Many of the early experiments have been performed on a SiO 2 substrate.…”

mentioning

confidence: 99%

See 1 more Smart Citation

Microscopic Theory of Exciton-Exciton Annihilation in Two-Dimensional Semiconductors

Steinhoff,

Florian,

Jahnke

2021

Preprint

View full text Add to dashboard Cite

Auger-like exciton-exciton annihilation (EEA) is considered the key fundamental limitation to quantum yield in devices based on excitons in two-dimensional (2d) materials. Since it is challenging to experimentally disentangle EEA from competing processes, guidance of a quantitative theory is highly desirable. The very nature of EEA requires a material-realistic description that is not available to date. We present a many-body theory of EEA based on first-principle band structures and Coulomb interaction matrix elements that goes beyond an effective bosonic picture. Applying our theory to monolayer MoS2 encapsulated in hexagonal BN, we obtain an EEA coefficient in the order of 10 −3 cm 2 s −1 at room temperature, suggesting that exciton annihilation is often dominated by other processes, such as defect-assisted scattering. Our studies open a perspective to quantify the efficiency of intrinsic EEA processes in various 2d materials in the focus of modern materials research.c/v k is the energy of a carrier with momentum k in a conduction/valence band, and V λ,ν,ν ,λ k,k ,k +q,k−q are Coulomb interaction matrix elements. The crystal area is denoted by A. Augerlike EEA emerges as a higher-order carrier-carrier interaction process within the dynamics of microscopic exciton populations, which are described by two-particle

show abstract

mentioning

confidence: 92%

mentioning

confidence: 99%

Microscopic Theory of Exciton-Exciton Annihilation in Two-Dimensional Semiconductors

Steinhoff,

Florian,

Jahnke

2021

Preprint

View full text Add to dashboard Cite

show abstract

“…It can be challenging to study interlayer excitons in 2D materials via absorption spectroscopy: the transition rate to form interlayer excitons directly from light is relatively low, as the electron and hole are spatially separated. [ 11 ] The ultrafast processes required to create interlayer excitons can, however, be studied by sensitive transient absorption spectroscopy methods, by first generating an intralayer exciton that subsequently dissociates across the junction, [ 15–18 ] or by probing the internal transitions of interlayer excitons. [ 19 ] In type II heterojunctions an electron–hole pair generated in one material will separate via charge transfer on ultrafast (sub‐picosecond) timescales, creating a long‐lived interlayer exciton that straddles the interface.…”

Section: Introductionmentioning

confidence: 99%

Intertube Excitonic Coupling in Nanotube Van der Waals Heterostructures

Burdanova

Liu

Staniforth

et al. 2021

Adv Funct Materials

View full text Add to dashboard Cite

Strong intertube excitonic coupling is demonstrated in 1D van der Waals heterostructures by examining the ultrafast response of radial C/BN/MoS2 core/shell/skin nanotubes to femtosecond infrared light pulses. Remarkably, infrared excitation of excitons in the semiconducting carbon nanotubes (CNTs) creates a prominent excitonic response in the visible range from the MoS2 skin, even with infrared photons at energies well below the bandgap of MoS2. Via classical analogies and a quantum model of the light–matter interaction these findings are assigned to intertube excitonic correlations. Dipole–dipole Coulomb interactions in the coherent regime produce intertube biexcitons, which persist for tens of femtoseconds, while on longer timescales (>100 ps) hole tunneling—from the CNT core, through the BN tunnel barrier, to the MoS2 skin—creates intertube excitons. Charge transfer and dipole–dipole interactions thus play prominent roles on different timescales, and establish new possibilities for the multi‐functional use of these new nanoscale coaxial cables.

show abstract

“…[13,14] It can be challenging to study interlayer excitons in 2D materials via absorption spectroscopy: the transition rate to form interlayer excitons directly from light is relatively low, as the electron and hole are spatially separated. [11] The ultrafast processes required to create interlayer excitons can, however, be studied by sensitive transient absorption spectroscopy methods, by first generating an intralayer exciton that subsequently dissociates across the junction, [15][16][17][18] or by probing the internal transitions of interlayer excitons. [19] In type II heterojunctions an electron-hole pair generated in one material will separate via charge transfer on ultrafast (sub-picosecond) timescales, creating a long-lived interlayer exciton that straddles the interface.…”

Section: Introductionmentioning

confidence: 99%

Intertube excitonic coupling in nanotube van der Waals heterostructures

Lloyd‐Hughes

2021

Proceedings of the nanoGe Fall Meeting 2021

View full text Add to dashboard Cite

Role of weak interlayer coupling in ultrafast exciton-exciton annihilation in two-dimensional rhenium dichalcogenides

Cited by 25 publications

References 59 publications

Microscopic Theory of Exciton-Exciton Annihilation in Two-Dimensional Semiconductors

Microscopic Theory of Exciton-Exciton Annihilation in Two-Dimensional Semiconductors

Intertube Excitonic Coupling in Nanotube Van der Waals Heterostructures

Intertube excitonic coupling in nanotube van der Waals heterostructures

Contact Info

Product

Resources

About