Role of Two-Photon Electronic Transitions in the Formation of Active Dynamic Conductivity in a Three-Barrier Resonance Tunneling Structure with an Applied DC Electric Field

Abstract

The theory of active dynamic conductivity in a three-barrier resonance tunneling structure subjected to the combined action of a weak electromagnetic field and a longitudinal dc electric field is developed with regard for the contribution of laser-induced one-and two-photon electronic transitions with different frequencies. For this purpose, the full Schrödinger equation is solved in the effective mass approximation and with the use of the model of rectangular potential wells and barriers for an electron. The maximum contribution of two-photon transitions to the formation of the total active dynamic conductivity in laser-induced transitions is shown not to exceed 38%. Geometric configurations of the resonance tunneling structure, for which the laser radiation intensity increases due to laser-induced two-photon electronic transitions, are determined. K e y w o r d s: resonance tunneling structure, quantum cascade laser, quantum cascade detector, active dynamic conductivity, two-photon electronic transition.

Anisotropic wurtzite resonance tunneling structures: stationary spectrum of electron and oscillator strengths of quantum transitions

“…It can be seen from the figure that in comparison with the QCD cascades operating in the middle and far infrared ranges [7,8], the depths of potential wells and the height of potential barriers are much larger and significantly deformed under the influence of internal electric fields caused by spontaneous and piezoelectric polarizations. It should be noted that this fact is promising for varying the performance characteristics of nanoscale devices by changing the parameters of the geometric design of the RTS cascade [30][31][32]. In Fig.…”

The Spectrum of Transverse Acoustic Phonons in Planar Multilayer Semiconductor Nanostructures

“…Actually, the study of electron tunneling processes in planar semiconductor multilayer resonant tunneling structures (RTS) occupies an important place for an effective work of modern quantum cascade lasers (QCL) [1][2][3] and detectors (QCD). Much attention is paid to the theoretical study of interaction of electrons with optical phonons [4], constant electric [5,6] and magnetic field [7] with the electron beam and its static and dynamic spatial charge [8,9], but the acoustic phonons influence on the resonant tunneling is still practically unexplored. Also the value of contribution of electrons interaction with acoustic phonons in multilayer RTS is not been studied yet.…”