Role of the heat accumulation effect in the multipulse modes of the femtosecond laser microstructuring of silicon

Guk, I. V.; Shandybina, G. D.; Yakovlev, E. B.

doi:10.1134/s1063782616050080

Cited by 4 publications

(2 citation statements)

References 18 publications

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“…The larger the depth–width ratio of the groove is, the more beneficial are the multiple reflections of light in the groove, and the lower is the reflectance . The high-repetition-rate femtosecond laser exhibits the heat accumulation effect, , which is more conducive to the crystallization of deposited nanoparticles. Microscale structures are formed via the aggregation of nanoparticles.…”

Section: Resultsmentioning

confidence: 99%

Broad-Band Ultra-Low-Reflectivity Multiscale Micro–Nano Structures by the Combination of Femtosecond Laser Ablation and In Situ Deposition

Chen

Wang

Tao

et al. 2020

ACS Appl. Mater. Interfaces

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Functional surfaces with broad-band ultralow optical reflection have many potential applications in areas like national defense and energy conversion. For efficient, high-quality manufacturing of material surfaces with antireflection features, a novel machining method for multiscale micro–nano structures is proposed. This method can enable the collaborative manufacturing of both microstructures via laser ablation and micro–nano structures with high porosity via in situ deposition, and it can simplify the fabrication process of multiscale micro–nano structures. As a result, substantially improved antireflection properties of the treated material surface can be realized by optimizing light trapping of the microstructures and enhancing the effective medium effect for the micro–nano structures with high porosity. In ultraviolet–visible–near-infrared regions, average reflectances, as low as 2.21 and 3.33%, are achieved for Si and Cu surfaces, respectively. Furthermore, the antireflection effect of the treated surface can also be extended to the mid-infrared wavelength range, where the average reflectances for the Si and Cu surfaces decrease to 5.28 and 5.18%, respectively. This novel collaborative manufacturing method is both simple and adaptable for different materials, which opens new doors for the preparation of broad-band ultra-low-reflectivity materials.

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Section: Resultsmentioning

confidence: 99%

Broad-Band Ultra-Low-Reflectivity Multiscale Micro–Nano Structures by the Combination of Femtosecond Laser Ablation and In Situ Deposition

Chen

Wang

Tao

et al. 2020

ACS Appl. Mater. Interfaces

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“…However, such more intense heating of the electronic subsystem of a film by femtosecond laser pulses [ 45 ] can also lead to an increase in the thermal emission of electrons from the material surface [ 43 , 46 ]. This, as a result, leads to a decrease in concentration of nonequilibrium charge carriers in the film, and, consequently, a decrease in the LIPSS period too.…”

Section: Discussionmentioning

confidence: 99%

Femtosecond Laser Fabrication of Anisotropic Structures in Phosphorus- and Boron-Doped Amorphous Silicon Films

et al. 2022

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Femtosecond laser-modified amorphous silicon (a-Si) films with optical and electrical anisotropy have perspective polarization-sensitive applications in optics, photovoltaics, and sensors. We demonstrate the formation of one-dimensional femtosecond laser-induced periodic surface structures (LIPSS) on the surface of phosphorus- (n-a-Si) and boron-doped (p-a-Si) amorphous silicon films. The LIPSS are orthogonal to the laser polarization, and their period decreases from 1.1 ± 0.1 µm to 0.84 ± 0.07 µm for p-a-Si and from 1.06 ± 0.03 to 0.98 ± 0.01 for n-a-Si when the number of laser pulses per unit area increases from 30 to 120. Raman spectra analysis indicates nonuniform nanocrystallization of the irradiated films, with the nanocrystalline Si phase volume fraction decreasing with depth from ~80 to ~40% for p-a-Si and from ~20 to ~10% for n-a-Si. LIPSS’ depolarizing effect, excessive ablation of the film between LIPSS ridges, as well as anisotropic crystalline phase distribution within the film lead to the emergence of conductivity anisotropy of up to 1 order for irradiated films. Current–voltage characteristic nonlinearity observed for modified p-a-Si samples may be associated with the presence of both the crystalline and amorphous phases, resulting in the formation of potential barriers for the in-plane carrier transport and Schottky barriers at the electric contacts.

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Influence of the effect of two-photon interband absorption saturation on the photoexcitation of monocrystalline Si by intense femtosecond laser pulse

Polyakov

Yakovlev

2018

Opt Quant Electron

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Role of the heat accumulation effect in the multipulse modes of the femtosecond laser microstructuring of silicon

Cited by 4 publications

References 18 publications

Broad-Band Ultra-Low-Reflectivity Multiscale Micro–Nano Structures by the Combination of Femtosecond Laser Ablation and In Situ Deposition

Broad-Band Ultra-Low-Reflectivity Multiscale Micro–Nano Structures by the Combination of Femtosecond Laser Ablation and In Situ Deposition

Femtosecond Laser Fabrication of Anisotropic Structures in Phosphorus- and Boron-Doped Amorphous Silicon Films

Influence of the effect of two-photon interband absorption saturation on the photoexcitation of monocrystalline Si by intense femtosecond laser pulse

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