2016
DOI: 10.1016/j.jmmm.2016.04.065
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Role of the antiferromagnetic bulk spins in exchange bias

Abstract: a b s t r a c tThis "Critical Focused Issue" presents a brief review of experiments and models which describe the origin of exchange bias in epitaxial or textured ferromagnetic/antiferromagnetic bilayers. Evidence is presented which clearly indicates that inner, uncompensated, pinned moments in the bulk of the antiferromagnet (AFM) play a very important role in setting the magnitude of the exchange bias. A critical evaluation of the extensive literature in the field indicates that it is useful to think of this… Show more

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Cited by 53 publications
(50 citation statements)
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“…through a ferromagnetic spin Seebeck effect. Possible sources include bulk uncompensated moments in the NiO [61], interfacial uncompensated moments separate from the {111} interfacial uncompensated AF monolayers [25], canted moments at the Pt/NiO interfaces from symmetry breaking, and proximity-induced magnetization in the Pt. We first take AF LSSE images of an unannealed Pt/NiO/Pt sample at ±2.5 kG, the largest field we can apply in our setup, as shown in Fig.…”
Section: Control Measurements On Non-magnetic Pt/mgomentioning
confidence: 99%
“…through a ferromagnetic spin Seebeck effect. Possible sources include bulk uncompensated moments in the NiO [61], interfacial uncompensated moments separate from the {111} interfacial uncompensated AF monolayers [25], canted moments at the Pt/NiO interfaces from symmetry breaking, and proximity-induced magnetization in the Pt. We first take AF LSSE images of an unannealed Pt/NiO/Pt sample at ±2.5 kG, the largest field we can apply in our setup, as shown in Fig.…”
Section: Control Measurements On Non-magnetic Pt/mgomentioning
confidence: 99%
“…While the free ferromagnet (FM) follows the external magnetic field, the second ferromagnetic layer is pinned via the EB effect, which is caused by the interfacial interaction with an antiferromagnet (AF). The microscopic origin of the EB has been discussed for a long time, and it seems that there is no single origin of EB but rather a variety of effects that play a role, such as the roughness of the FM-AF interfaces [2,3], domains in the AF pinned by defects [4][5][6], uncompensated interfacial spins [7], anisotropic exchange interactions across the interface [8], and a granular structure of the AF [9]. While these models rest on statistical arguments, where different types of disorder break the balance between magnetic moments in the two sublattices of the AF, recently, based on symmetry properties, Dzyaloshinskii-Moriya (DM) interactions have been proposed as a possible mechanism responsible for EB in perfectly compensated systems [10][11][12].…”
Section: Introductionmentioning
confidence: 99%
“…In magnetic thin film heterostructures, the interaction at the heterointerface plays a dominant role in the development of novel electronic and magnetic properties. Especially, the heterointerface between ferromagnetic and antiferromagnetic thin films is under intensive focus with respect to its promising application in the exchange coupling effect for magnetic devices as well as the fundamental mechanism underlying the heterointerface interaction . The coupling strength at the heterointerface primarily relies on the interfacial structure at the atomic scale, including atomic roughness, steps, and intermixing.…”
Section: Introductionmentioning
confidence: 99%