Role of temperature on CdS and MoS2 doped SnO2 nanostructures: Potential applications in photodetection and temperature dependent current-voltage characteristics

Hydrothermal Synthesis and Characterization of WSe2 Nanosheets: A Promising Approach for Wearable Photodetector Applications

“…The response of a specific nanostructure can be assessed and plotted for all the fabricated nanostructures by inputting the value of [I illuminated − I dark ] for that particular nanostructure obtained from Figure 9 along with the value of "P" for a specific laser beam and "A" for that specific nanostructure. 63 The performance of the photodetector should be evaluated by measuring its detectivity using the discovered photocurrent characteristics. Assuming that the noise is limited to shot noise to simplify computations, detectivity "D" is determined using the formula.…”

Development of the Sb4O5Cl2@NbSe2 Composite: The Impact of 2H-NbSe2 Nanoparticles on Sb4O5Cl2 and Their Application for the Removal of Cr(VI)/Fe(III) and Methyl Orange from Wastewater

“…However, there have not been many studies in which TMDCs have been incorporated into semiconductor materials, and most of these studies are limited to the use of molybdenum disulfide (MoS 2 ) coupled with metals, 29 dopants, 30,31 and semiconductors. 32,33 Among all these TMDC compounds, niobium diselenide (NbSe 2 ) has shown a diverse array of applications in the domain of catalysis as well as the fabrication of electrical and optical devices. 34−36 Like 2H-MoS 2 , 2H-NbSe 2 has the same hexagonal layer symmetry and trigonal prismatic crystal structure with strong covalent bonding of Se−Nb−Se atoms, where the niobium atoms reside in the center of trigonal selenium prisms to form 2H-NbSe 2 .…”

“…The usage of two-dimensional (2D) layered transition metal dichalcogenide (TMDC) nanomaterials has drawn a lot of attention due to their advantageous features, such as large surface area, more number of active sites, cost-effective preparation, and superior biocompatibility. − It has been observed that the crystal edges of TMDCs have a large number of active sites that are responsible for improving the efficiency of commercially used semiconductors when TMDCs form composites with them. − TMDCs are thus expected to be efficient cocatalysts to increase the light absorption ability or adsorption property of commercial semiconductors. However, there have not been many studies in which TMDCs have been incorporated into semiconductor materials, and most of these studies are limited to the use of molybdenum disulfide (MoS 2 ) coupled with metals, dopants, , and semiconductors. , Among all these TMDC compounds, niobium diselenide (NbSe 2 ) has shown a diverse array of applications in the domain of catalysis as well as the fabrication of electrical and optical devices. − Like 2H-MoS 2 , 2H-NbSe 2 has the same hexagonal layer symmetry and trigonal prismatic crystal structure with strong covalent bonding of Se–Nb–Se atoms, where the niobium atoms reside in the center of trigonal selenium prisms to form 2H-NbSe 2 . These features ensure that NbSe 2 can remove contaminants rapidly and effectively from wastewater and thus contribute to environmental remediation.…”

Enhancing Photodetection Performance and Thermal Tolerance of CdS Thin Films through Cobalt (Co) Doping

“…[ 26 ] Subsequently, S. Rahman et al investigated CdS and MoS 2 ‐doped SnO 2 nanostructures, where the increase in dark current was attributed to thermally generated charge carriers. [ 24 ] Additionally, Miller et al reported UV photodetection using SiC up to an operating temperature of 300 °C. However, they noted a slightly increased response time due to the decreasing hole/electron velocity with rising temperature.…”

“…Now, as CdS is of semiconducting nature, it has a negative temperature coefficient (NTC) of resistance, [21,22] its utilization in the instruments required for combustion monitoring, geothermal, mining, gas, and oil exploration at high operating temperatures is difficult. [23] As the operating temperature of the semiconductor device increases above 80 °C, the intrinsic carrier concentration increases exponentially with temperature, [24] and the device will no longer function as proposed. [25] This temperature-dependent behavior can have adverse consequences in high-temperature settings, potentially leading to deviations in their performance.…”