Role of Temperature in Arsenic-Induced Antisurfactant Growth of GaN Microrods

Ciechanowicz, P.; Gorantla, Sandeep; Wełna, M.; Pieniążek, A.; Serafińczuk, J.; Kowalski, B.; Kudrawiec, R.; Hommel, D.

doi:10.1021/acsomega.2c02777

Cited by 3 publications

(2 citation statements)

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“…In our MBE growths, we obtained continuous crystalline layers with a nitrogen content of up to 1% under conditions close to stoichiometric . Additionally, under gallium-rich conditions, we observed the growth of microrods instead of continuous layers. , Arsenic was not incorporated into these microrods but acted as an antisurfactant during the formation of gallium droplets and as an element responsible for the growth of dodecahedral rods …”

Section: Introductionmentioning

confidence: 99%

“…10 Additionally, under gallium-rich conditions, we observed the growth of microrods instead of continuous layers. 16,17 Arsenic was not incorporated into these microrods but acted as an antisurfactant during the formation of gallium droplets and as an element responsible for the growth of dodecahedral rods. 16 In the case of metalorganic vapor-phase epitaxy (MOVPE), only a few groups reported the growth of III−N diluted with arsenic using tertiarybutylarsine (TBAs) as a source.…”

Section: ■ Introductionmentioning

confidence: 99%

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Monocrystalline GaN Diluted with up to 7% Arsenic Grown by MOVPE

Olszewski,

Majchrzak,

Grodzicki

et al. 2024

Crystal Growth & Design

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The growth of GaNAs with arsenic is important due to band engineering in the valence band of GaN, but it is very challenging due to the difference in the optimal growth temperatures for GaN and GaAs. In this study, we present the results of growing GaNAs via metal−organic vapor phase epitaxy with trimethylarsine as the arsenic source. By reducing the growth temperature and increasing the V/III ratio, we obtained an As content of up to 7.6%. Crystalline material quality and composition were investigated with high-resolution X-ray diffraction. Atomic force microscopy determined surface roughness root-mean-square values between 0.4 and 2 nm. The internal structure of the layers was investigated via transmission electron microscopy, proving their high crystalline quality. It also showed that further reduction of growth temperature resulted in the formation of a zincblende GaAs polycrystalline layer.

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Section: Introductionmentioning

confidence: 99%

Section: ■ Introductionmentioning

confidence: 99%

Monocrystalline GaN Diluted with up to 7% Arsenic Grown by MOVPE

Olszewski,

Majchrzak,

Grodzicki

et al. 2024

Crystal Growth & Design

Self Cite

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Dodecagonal GaN Microrods: Chemical Stability of a‐, m‐, and c‐Plane Walls and Their Application to Water‐Splitting

Janicki,

Gorantla,

Piskorska‐Hommel

et al. 2024

Adv Materials Inter

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Photoelectrolysis of water is a sustainable option for the production of hydrogen fuel. GaN nano‐ or microstructures are considered for water‐splitting due to their general high chemical stability and high surface‐to‐volume ratio enhancing the process effectiveness. In this study GaN structures with dodecagonal microrods are used as a working electrode for the water‐splitting process. Microrods are grown using a plasma‐assisted molecular beam epitaxy process allowing tailoring of microrod height and density. Their unique property is the of presence twelve sidewalls with alternating a‐ and m‐plane orientations. This enables a simultaneous study of the chemical stability of c‐, a‐, and m‐plane walls of GaN. The water‐splitting process is performed using a 1 mol l−1 NaOH electrolyte solution. Non‐zero current measured at zero bias under illumination indicates that the process takes place. A degradation of the GaN structure is observed after a prolonged process time. In short‐term exposures, etching of microrod sidewalls is observed. Roughening of the a‐plane walls studied by transmission electron microscopy indicates that this orientation is etched with a fastest rate. The internal crystalline structure is not influenced by the etching and remains stable as shown by the X‐ray absorption spectroscopy study.

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