2021
DOI: 10.1021/acs.jpclett.0c03012
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Role of Perfluorophenyl Group in the Side Chain of Small-Molecule n-Type Organic Semiconductors in Stress Stability of Single-Crystal Transistors

Abstract: Operational stability, such as long-term ambient durability and bias stress stability, is one of the most significant parameters in organic thin-film transistors (OTFTs). The understanding of such stabilities has been mainly devoted to energy levels of frontier orbitals, thin-film morphologies, and device configuration involving gate dielectrics and electrodes, whereas the roles of molecular and aggregated structural features in device stability are seldom discussed. In this Letter, we report a remarkable enha… Show more

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Cited by 11 publications
(18 citation statements)
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“…NMR spectra ( 1 H, 13 C, and 19 F) were recorded with Bruker Avance-300, Bruker Avance-400 and Bruker Avance-500 spectrometers. Some 13 C NMR spectra were not recorded because of low solubility of the investigated compounds.…”
Section: Methodsmentioning
confidence: 99%
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“…NMR spectra ( 1 H, 13 C, and 19 F) were recorded with Bruker Avance-300, Bruker Avance-400 and Bruker Avance-500 spectrometers. Some 13 C NMR spectra were not recorded because of low solubility of the investigated compounds.…”
Section: Methodsmentioning
confidence: 99%
“…NMR spectra ( 1 H, 13 C, and 19 F) were recorded with Bruker Avance-300, Bruker Avance-400 and Bruker Avance-500 spectrometers. Some 13 C NMR spectra were not recorded because of low solubility of the investigated compounds. IR spectra were recorded with a Bruker Tensor 27 FT-IR spectrometer in potassium bromide pellets (concentration ≈ 0.25%, pellet thickness ≈ 1 mm).…”
Section: Methodsmentioning
confidence: 99%
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“…TCNBT Th IDT exhibits an electron mobility that reaches μ e,sat,max ≈ 1.1 cm 2 V −1 s −1 in this device architecture, which to the best of our knowledge, is one of the highest reported for spin-cast n-type small molecules in undoped devices. 15,49,50 The device exhibited reasonable characteristics with an on/off current ratio I on/off ≈ 10 3 to 10 4 and a threshold voltage V T ≈ 33 V (Table 2). Notably, the square root plot of the drain current was linear, with no evidence of the device nonidealities apparent in some highmobility devices.…”
mentioning
confidence: 95%