Role of oxygen within end group substituents on film morphology and charge carrier transport in thiophene/phenylene small-molecule semiconductors

Waliszewski, Witold; Parr, Zachary S.; Michalska, Agnieszka; Halaksa, Roman; Zajączkowska, Hanna; Ślęczkowski, Piotr; Neophytou, Marios; Luszczynska, Beata; Blom, Paul W. M.; Nielsen, Christian B.; Marszałek, Tomasz; Pisula, Wojciech

doi:10.1016/j.orgel.2022.106608

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Cited by 3 publications

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“…S27 (ESI†). The minimal or no hysteresis of the fabricated devices is instigated from the alkoxy chains present in the molecule 12a–d , which can afford humid resistivity and will passivate trap states, 46–49 causing issues of hysteresis, leakage and high threshold voltages. 24,50,51…”

Section: Computational Studiesmentioning

confidence: 99%

“…S27 (ESI †). The minimal or no hysteresis of the fabricated devices is instigated from the alkoxy chains present in the molecule 12a-d, which can afford humid resistivity and will passivate trap states, [46][47][48][49] causing issues of hysteresis, leakage and high threshold voltages. 24,50,51 For the field-effect transistors, the film morphology and crystalline properties have been widely evidenced to be the main factors determining the mobility of the planarity and extended pi-conjugation, which results in efficient intermolecular interactions to give improved mobility.…”

Section: Ofet Characteristicsmentioning

confidence: 99%

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