Role of Oxygen Pressure on the Surface Properties of Polycrystalline Cu2O Films Deposited By Thermal Evaporator

Abstract

<jats:p>&lt;p&gt;Polycrystalline cuprous oxide (P-Cu2O) films are deposited on Cu substrates for various (0.2, 0.3 and 0.4 mbar) oxygen pressures (OP) by thermal evaporator. The XRD pattern shows the development of Cu (200), Cu2O (200) and Cu2O (311) diffraction planes which confirms the deposition of P-Cu2O films. The intensity of Cu2O (200) and Cu2O (311) planes is associated with the increase of OP. The crystallite size and microstrains developed in (200) and (311) planes are found to be 19.31, 21.18, 11.32 nm; 22.04, 23.11, 12.08 nm and 0.113, 0.103, 0.193; 0.099, 0.096, 0.181 with increasing OP respectively. The d-spacing and lattice constant are found to be 0.210, 0.128 nm and 0.421, 0.425 nm respectively. The bond length of P-Cu2O film is found to be 0.255 nm. The crystallites/unit area of these planes is found to be 12.21, 7.46, 45.16 nm-2 and 8.21, 5.75, 37.16 nm-2 respectively. The texture coefficients of these planes are found to be 1.22, 1.26, 1.11 and 0.78, 0.74 and 0.56 with increasing OP respectively. The O and Cu contents are found to be 5.31, 5.92, 6.94 wt % and 83.01, 82.44, 80.65 wt % respectively. The thickness and growth rate of P-Cu2O films are found to be 87.9, 71.9, 65.5 nm and 17.6, 14.2, 13.1 (nm/min) with increasing OP respectively. The SEM micro-structures reveal the formations of patches of irregular shapes, rounded nano-particles, clouds of nano-particles and their distribution depend on the increasing OP. The refractive index and energy band gap of P-Cu2O films are found to be 1.96, 1.89, 1.92 and 2.47, 2.44 and 2.25 eV with increasing OP respectively.&lt;br /&gt;&lt;br /&gt;&lt;/p&gt;</jats:p>