Role of microstructure on optical properties in high-uniformity In<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:msub><mml:mrow /><mml:mrow><mml:mn>1</mml:mn><mml:mo>−</mml:mo><mml:mi>x</mml:mi></mml:mrow></mml:msub></mml:math>Ga<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:msub><mml:mrow /><mml:mi>x</mml:mi></mml:msub></mml:math>As nanowire arrays: Evidence of a wider wurtzite band gap

Morkötter, Stefanie; Funk, Stefan; Liang, Mengyu; Döblinger, Markus; Hertenberger, Simon; Treu, Julian; Rudolph, Daniel; Yadav, Anandi; Becker, Jonathan; Bichler, Max; Scarpa, Giuseppe; Lugli, Paolo; Zardo, Ilaria; Finley, Jonathan J.; Abstreiter, G.; Koblmüller, Gregor

doi:10.1103/physrevb.87.205303

Cited by 52 publications

(99 citation statements)

References 45 publications

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“…and the predominant growth mechanism must play a very critical role in the relative stability of the WZ phase in our present NWs. Recently, we performed growth temperature‐dependent investigations of the crystal phase and found that for a fixed InGaAs composition higher temperature leads to a more pronounced WZ stacking with longer segments as opposed to growth at lower temperature 76. This suggests that the trends in crystal phase stacking observed here are much more likely dominated by growth temperature than by the composition.…”

Section: Structural Properties Of Ingaas Nanowiresmentioning

confidence: 60%

“…All experimental details regarding the TEM analysis are described in Ref. 76, where diffraction patterns and high‐resolution (HR) TEM images were recorded in a 〈110〉 zone axis geometry which corresponds to the side facets of the NWs. Data presented here are representative for each sample based on a statistical analysis of at least >5 NW/sample.…”

Section: Structural Properties Of Ingaas Nanowiresmentioning

confidence: 99%

“…For such measurements we used a home‐built PL setup specifically designed for the IR spectral region, using a He/Ne laser (633 nm) for excitation along with a monochromator and a liquid nitrogen cooled InSb photodetector on the analysis side. Further experimental details can be found elsewhere 76. The excitation laser spot size focused onto the sample had a spot diameter of ∼2 µm, corresponding to an excitation volume of ∼50–60 NWs.…”

Section: Optical Properties Of Ingaas Nanowiresmentioning

confidence: 99%

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ChemMedChem has reached…︁The Big TEN!

Williams

Ortúzar

2014

ChemMedChem

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Volume 102015 marks the 10th volume of ChemMedChem. Launched in summer 2005 with the inaugural issue published in January 2006, the journal will celebrate its 10th anniversary at the beginning of 2016. These milestones will be marked by special issues, contributions and events, and we encourage all our readers to "watch this space"! In particular, our Editorial and International Advisory Board Members will be contributing Viewpoints, Concepts and Essays on hot topics in medicinal chemistry over the coming two volumes. These contributions will cover topics central to medicinal chemistry and drug discovery, such as the roles of kinetics and thermodynamics in drug discovery, the ongoing debate over cancer metabolism, the development of substance classes over time, and the potential future image and expectations of medicinal chemists down the road. Given the high caliber of our board members, we can expect these articles to be both informative and provocative.

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Section: Structural Properties Of Ingaas Nanowiresmentioning

confidence: 60%

Section: Structural Properties Of Ingaas Nanowiresmentioning

confidence: 99%

Section: Optical Properties Of Ingaas Nanowiresmentioning

confidence: 99%

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ChemMedChem has reached…︁The Big TEN!

Williams

Ortúzar

2014

ChemMedChem

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“…The composition uniformity of the SAG grown NWs is also studied by EDS, and STEM carefully [156]. The microstructure of SGA grown InGaAs NWs is studied by HRTEM, selective area diffraction, and atomic resolution HAADF STEM [164] and proved that -similar to other III-As NWs-the WZ phase is the dominated phase and certain density of stacking faults makes the crystal a mixture of WZ and ZB. The length of WZ segment will be reduced by increasing the gallium content and, eventually the crystal will transform into ZB dominated with gallium up to 36%.…”

Section: Science China Materialsmentioning

confidence: 98%

Growth of III-V semiconductor nanowires and their heterostructures

Zou

Han

2016

Sci. China Mater.

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introduced by Wagner and Ellis in the 1960's to grow Si submicrosize whiskers [2]. Although Si nanowires are useful, particular their easy incorporation with mature Si technology, which makes products cheap and suitable for mass production, the indirect band gap of Si is hindering the application of this material in many fields where direct band gap is essential, such as optoelectronics. In this regard, III-V compound semiconductors are dominating due to their direct band gap and flexibility in band gap and lattice engineering. In the early 1990s, Scientists from Hitachi employed the VLS approach to grow III-V nanowires [3,4]. At that time, good position and orientation control was achieved as well as the demonstration of the first p-n junctions based on heterostructured nanowires [5]. These novel one-dimensional (1D) III-V nanostructures provide a good model system for investigating the dependence of electronic transport, optical, and mechanical properties on their confinement effects. They demonstrated the potential of these nanowires in the next-generation integrated circuits and functional devices, such as field-effect transistors [6−8], single-electron transistors [9], light-emitting devices [10], chemical sensors [11−14], and THz detectors [15].The control of NW growth is considered to be one of the key points and the foundation of successful NW-based device fabrication. The benefit of NWs is that due to their small radial dimension and the large aspect ratio, the strain in axial heterostructures induced by the lattice mismatch can be relaxed within a small region close to the interface. Therefore, there is virtually no limitation in the choice of materials by the requirement of lattice-matching.Another benefit of III-V semiconductor NWs is that by carefully choosing substrates, the growth of NWs can be self-assembled, and as-grown epitaxial NWs are free-standing. Additionally, by employing nanoscale lithography techniques, e.g., electron beam lithography, it is possible to realize the growth of NWs on pre-patterned substrates [16−20].ABSTRACT In this paper, we present a review about recent progress on the growth of III-V semiconductor homo-and heterostructured nanowires. We will first deliver a general discussion on the crystal structure and the conventional growth mechanism of one dimensional nanowires. Then we provide a review about most widely used growth techniques, sample preparation and the cutting edge characterization techniques including advanced electron microscopy, in situ electron diffraction, micro-Raman spectroscopy, and atom probe tomography. In the end, the growth of different heteostructured III-V semiconductor nanowires will be reviewed. We will focus on the morphology dependence, temperature influence, and III/ V flux ratio dependent growth. The perspective and an outlook of this field is discussed in order to foresee the future of the fundamental research and application of these one dimensional nanostructures.

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“…However, the well-controlled synthesis of III-V NWs with a pure wurtzite (WZ) or zinc blende (ZB) phase can also bring about new application possibilities, since different crystal structures can lead to different band gaps [21][22][23] and, in turn, different electronic and optical properties. In fact, some novel structures like WZ/ZB or ZB twinning superlattice have been proposed [24][25][26][27].…”

Section: Introductionmentioning

confidence: 99%

Evolution of morphology and microstructure of GaAs/GaSb nanowire heterostructures

Shi¹,

Zhang²,

Lu³

et al. 2016

Nano Online

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In this paper, we successfully grow GaAs/GaSb core-shell heterostructure nanowires (NWs) by molecular beam epitaxy (MBE). The as-grown GaSb shell layer forms a wurtzite structure instead of the zinc blende structure that has been commonly reported. Meanwhile, a bulgy GaSb nanoplate also appears on top of GaAs/GaSb core-shell NWs and possesses a pure zinc blende phase. The growth mode for core-shell morphology and underlying mechanism for crystal phase selection of GaAs/GaSb nanowire heterostructures are discussed in detail.

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Role of microstructure on optical properties in high-uniformity In1−xGaxAs nanowire arrays: Evidence of a wider wurtzite band gap

Cited by 52 publications

References 45 publications

ChemMedChem has reached…︁The Big TEN!

ChemMedChem has reached…︁The Big TEN!

Growth of III-V semiconductor nanowires and their heterostructures

Evolution of morphology and microstructure of GaAs/GaSb nanowire heterostructures

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