Role of IGZO thickness for oxygen reservoir control in stacked IGZO/ZrOx layers: Towards reliable, uniform performance of flexible random-access memories

Exploring the Effects of Mo Doping on Oxygen Vacancy Formation and Uniformity in HfO2- and ZrO2-Based RRAMs

“…Resistive random access memory (RRAM) features a nonvolatile character, simple structure, good miniaturization, fast operation speed, low power consumption, , and is regarded as one of the most promising nonvolatile memories of the next generation . Among various resistive materials used for RRAM, HfO 2 and ZrO 2 stand out to be the best candidates as high-k materials that are perfectly compatible with the complementary metal oxide semiconductor (CMOS) technology. − …”

“…In addition, the effect of transition-metal doping on the RRAM system has attracted some attention. The results of Khera et al showed that Co doping can enhance the conductivity of the HfO 2 system; however, Kumar et al recently found that Ti doping c -HfO 2 results in a significant reduction in the electronic thermal conductivity of the system . Jaf et al found that the doping of transition metals (W, Nb, and Mo) in c -HfO 2 could reduce the current leakage of the system by first-principles calculations .…”

“…The results of Khera et al showed that Co doping can enhance the conductivity of the HfO 2 system; 14 however, Kumar et al recently found that Ti doping c-HfO 2 results in a significant reduction in the electronic thermal conductivity of the system. 5 Jaf et al found that the doping of transition metals (W, Nb, and Mo) in c-HfO 2 could reduce the current leakage of the system by first-principles calculations. 19 Recently, Pam et al experimentally found that the resistive switching of ReS 2 devices can be effectively modulated by Mo doping and that Mo-doped ReS 2 devices can simulate synaptic behavior in the long term.…”

Light‐Mediated Multi‐Level Flexible Copper Iodide Resistive Random Access Memory for Forming‐Free, Ultra‐Low Power Data Storage Application

“…To meet challenging aspects of key requirements for the aforementioned applications, multilevel nonvolatile memory (NVM) with novel form factors, coupled with complementary circuits with ultra-low power consumption, have been considered essential discrete components. [2,3] Various candidates using metal oxides (TaO x , HfO x , TiO x ZrO 2 , and IGZO), [4] perovskite oxides (Pr x Ca 1-x MnO 3 , SrTiO 3 , BaTiO 3 , and BiFeO 3 ), [5][6][7][8] metal halide perovskites (Cs 2 Cu 3 I 5 ), [9] and other materials are being investigated with great anticipation, for invisible complementary circuits and emerging NVMs.…”

“…Among them, metal oxides have been predominantly studied and applied in contemporary electronics systems. [4,10,11] Despite the attractive properties of metal oxides, including CMOS process compatibility and desirable multilayer-stacking features on NVM, the development of metal oxides-based complementary circuit systems integrated with NVM have been constrained by challenges such as lack of prominent p-type candidates, low field effect mobility, and unstable electrical properties under light illumination, and others. [12,13] Thus, halide materials (γ-CuI) have been investigated as one alternative p-type semiconductor in flat panel displays, because of their essential traits including optical transparency (approximately direct bandgap of 3.1 eV), [14] low electrical resistivity (≈72 mΩ cm), and high Hall mobility of 51.6 cm 2 V -1 s -1 .…”