Role of i-aSi:H Layers in aSi:H/cSi Heterojunction Solar Cells

Hayashi, Yutaka; Li, Debin; Ogura, Atsushi; Ohshita, Yoshio

doi:10.1109/jphotov.2013.2274616

Cited by 34 publications

(26 citation statements)

References 10 publications

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“…The amphoteric nature of a‐Si:H is modelled by the exponential band tail states (Urbach tails) and Gaussian defects density (pertaining to silicon dangling bonds). These data were taken from the relevant reported work available in the literature . The electrical simulation in TCAD is done by employing different physical models.…”

Section: Modelling and Understanding The Device For Simulationmentioning

confidence: 99%

“…These data were taken from the relevant reported work available in the literature. 35,36 The electrical simulation in TCAD is done by employing different physical models. The recombination models employed were the Shockley-Read-Hall (SRH), concentrationdependent SRH recombination, Auger recombination, and optical recombination models.…”

Section: Silvaco Technology Computer-aided Design Modellingmentioning

confidence: 99%

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Simulation of an efficient silicon heterostructure solar cell concept featuring molybdenum oxide carrier-selective contact

et al. 2017

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Summary Transition metal oxides/silicon heterocontact solar cells are the subject of intense research efforts owing to their simpler processing steps and reduced parasitic absorption as compared with the traditional silicon heterostructure counterparts. Recently, molybdenum oxide (MoOx, x < 3) has emerged as an integral transition metal oxide for crystalline silicon (cSi)‐based solar cell based on carrier‐selective contacts (CSCs). In this paper, we physically modelled the CSC‐based cSi solar cell featuring MoOx/intrinsic a‐Si:H/n‐type cSi/intrinsic a‐Si:H/n+‐type a‐Si:H for the first time using Silvaco technology computer‐aided design simulator. To analyse the optical and electrical properties of the proposed solar cell, several technological parameters such as work function and thickness of MoOx contact layer, intrinsic a‐Si:H band gap, interface recombination, series resistance, and temperature coefficient have been evaluated. It has been shown that higher work function of MoOx induces the formation of a favourable Schottky barrier height as well as an inversion at the front interface, stimulating least resistive path for holes. Utilising thinner MoOx layer implies reduced tunnelling of minority charge carriers, thus enabling the device to numerically attain 25.33% efficiency. With an optimised interface recombination velocity and reduced parasitic absorption, the proposed device exhibited higher Voc of 752 mV, Jsc of 38.8 mA/cm2, fill‐factor of 79.0%, and an efficiency of 25.6%, which can be termed as the harbinger for industrial production of next‐generation efficient solar cell technology.

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Section: Modelling and Understanding The Device For Simulationmentioning

confidence: 99%

Section: Silvaco Technology Computer-aided Design Modellingmentioning

confidence: 99%

Simulation of an efficient silicon heterostructure solar cell concept featuring molybdenum oxide carrier-selective contact

et al. 2017

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“…This performance upgrades happen due to research on various subjects like the effect of Indium-Tin-Oxide (ITO) layer on the behavior of the cell [5], the impact of front contact work function [6], the effect of surface texturing of crystalline silicon (c-Si) wafer [7], the role of Fermi state of doped hydrogenated amorphous silicon (a-Si:H) layers and band offsets [8], and the effect of intrinsic layer on the cell function [9]. Dwivedi et al (2012) optimized different structures of HIT cells through the thickness change of a-Si:H(n) and a-Si:H(i) front layers and c-Si wafer.…”

Section: Introduction the Heterojunction With Intrinsicmentioning

confidence: 99%

NUMERICAL SIMULATION OF THERMAL BEHAVIOR AND OPTIMIZATION OF a-Si/a-Si/C-Si/a-Si/A-Si HIT SOLAR CELL AT HIGH TEMPERATURES

Ganji

2017

Elektroteh. elektromeh.

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Цель. Кремниевые гетероструктурные солнечные элементы, в частности гетеропереходы с ячейками внутреннего тонкого слоя (HIT), в последнее время рекомендуются для использования в качестве кремниевых элементов, поскольку они легко изготавливаются при низкой температуре обработки и имеют высокую оптическую и температурную стабильность, а также более высокий к.п.д., чем солнечные элементы на основе гомоперехода. В настоящей работе впервые предлагается относительно точная вычислительная модель для более точного расчета теплового поведения таких ячеек. В этой модели для всех слоев полупроводника рассматривается температурная зависимость многих параметров, таких как подвижность, тепловая скорость носителей, граница зоны, энергия Урбаха хвостов зоны, сродство электронов, относительная диэлектрическая проницаемость и эффективная плотность состояний в валентной зоне и в зоне проводимости. С использованием данной модели исследуется тепловое поведение HIT солнечных элементов в диапазоне 25-75 °C. В данном диапазоне температур исследовано влияние толщины различных слоев HIT ячейки на ее внешние параметры и в результате предложена оптимальная толщина слоев HIT солнечных элементов для использования в широком диапазоне температур. Библ. 20, табл. 4, рис. 5. Ключевые слова: гетеропереходы с ячейками внутреннего тонкого слоя, высокая температура, тепловое поведение.

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“…The state-of-the-art amorphous silicon related passivation layer has been intensively investigated by several research groups [4][5][6] and modeling of the recombination at the a-Si:H/c-Si interface was also reported [7]. Device simulations of heterojunction crystalline silicon solar cells were also investigated [8,9], however, the information of the passivation layer/c-Si interface is still limited. Therefore, further investigation of the recombination mechanism at the interface is required.…”

Section: Introductionmentioning

confidence: 99%

Temperature-Dependent Minority Carrier Lifetime of Crystalline Silicon Wafers Passivated by High Quality Amorphous Silicon Oxide

Inaba¹,

Todoroki²,

Nakada³

et al. 2015

Extended Abstracts of the 2015 International Conference on Solid State Devices and Materials

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We measured the temperature dependence of the minority carrier effective lifetime of passivated crystalline silicon. Analysis of the sample with a best passivation layer revealed the very small surface recombination velocity of 0.35 cm/s. The temperature dependence for this well-passivated sample is substantially determined by the bulk recombination in c-Si. On the other hand, the samples in which interface defect density was increased by a high temperature annealing exhibited a different temperature dependence. Our device simulations suggest that interface defect distribution and valence band offset significantly affect the temperature dependence.

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Role of i-aSi:H Layers in aSi:H/cSi Heterojunction Solar Cells

Cited by 34 publications

References 10 publications

Simulation of an efficient silicon heterostructure solar cell concept featuring molybdenum oxide carrier-selective contact

Simulation of an efficient silicon heterostructure solar cell concept featuring molybdenum oxide carrier-selective contact

NUMERICAL SIMULATION OF THERMAL BEHAVIOR AND OPTIMIZATION OF a-Si/a-Si/C-Si/a-Si/A-Si HIT SOLAR CELL AT HIGH TEMPERATURES

Temperature-Dependent Minority Carrier Lifetime of Crystalline Silicon Wafers Passivated by High Quality Amorphous Silicon Oxide

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