2010 IEEE Photinic Society's 23rd Annual Meeting 2010
DOI: 10.1109/photonics.2010.5698756
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Role of growth temperature on the physical characteristics of GaAsSb/GaAs QW lasers

Nadir Hossain
1
,
K. Hild
2
,
S. R. Jin
3
et al.

Abstract: Thermally activated carrier leakage via defects is found to be very sensitive to the growth temperature of GaAsSb quantum wells. Optimization of the growth temperature leads to a low Jth/QW of 138A/cm2 at RT

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