Role of growth temperature in photovoltaic absorber CuSbSe2 deposition through e-beam evaporation

Annealing Effect on One Step Electrodeposited CuSbSe2 Thin Films

“…As previously demonstrated by SEM and XRD measurements, the annealing temperatures above 350 • C promote the formation of Cu-rich phases due to the loss of Sb associated to the sublimation of Sb 2 Se 3 . At 400 • C, the main peak at 187 cm −1 can be attributed to CuSe 4 /SbSe 4 stretching vibrations of the Cu 3 SbSe 4 phase as reported in [29,30] or to the A g mode of the Cu 3 SbSe 3 phase [9,25]; the peaks at 230 and 169 cm −1 correspond to Cu 3 SbSe 4 [29]. It can also be seen that the minor peaks (83, 106 and 144 cm −1 ) corresponding to the CuSbSe 2 phase reappear next to the main peak at 217 cm −1 which seems to decrease.…”

“…The Raman peak at 264 cm −1 is ascribed to A 1g of Cu 2 Se phase [27]. The peaks representing the Sb 2 Se 3 phase are not distinguishable, but it appears that the peak at 189 cm −1 (A g ) due to Se-Sb-Se bonds of Sb 2 Se 3 phase overlaps with the peak at 217 cm −1 (A g ) of the CuSbSe 2 phase, resulting in an asymmetric peak broadning [9,25]. At 350 • C, the Raman spectrum is distinguished by two overlapping high peaks at 217 and 208 cm −1 , corresponding respectively to A g and B 2g modes of CuSbSe 2 phase [18,25].…”

“…Besides, a w B1g mode of Cu3SbSe3 phase is also observed at about 167 cm representing the binary phases of Cu2Se (264 cm −1 ) and Sb2Se3 ( firming their transformation into ternary phases at annealing As previously demonstrated by SEM and XRD measurem atures above 350 °C promote the formation of Cu-rich phases ated to the sublimation of Sb2Se3. At 400 °C, the main peak at 1 CuSe4/SbSe4 stretching vibrations of the Cu3SbSe4 phase as rep mode of the Cu3SbSe3 phase [9,25]; the peaks at 230 and 169 c [29]. It can also be seen that the minor peaks (83, 106 and 144 CuSbSe2 phase reappear next to the main peak at 217 cm −1 wh peak at 259 cm −1 corresponds to A1g mode of Sb2O3 phase [31 unknown so far.…”

“…CuSbSe 2 is a chalcogenide semiconductor that meets the main properties required for thin film solar cells absorber: direct and ideal band gap (at 1.1 eV) and high absorption coefficient (α > 10 4 cm −1 ) [8]. According to a theoretical study by Goyal et al, the high 2 of 13 absorption in CuSbSe 2 is due to the lone pair 5s 2 electron present in trivalent "Sb" [9]. Another interesting property is the 2D structure of CuSbSe 2 creating a chemically inert surfaces with fewer bonds attached compared to 3D structures, thus reducing the loss of carrier recombination and improving the efficiency of thin film solar cells [4].…”

Ultralow Thermal Conductivity and Enhanced Figure of Merit for CuSbSe2 via Cd-Doping

“…The chalcostibite compounds have recently drawn much attention in photovoltaic devices, infrared detectors, and solar cells. − CuSbSe 2 has orthorhombic structure with a space group of Pnma . As one of the thermoelectric materials, it shows intrinsically high Seebeck coefficient and low thermal conductivity and its constituents are free of toxic and inexpensive elements.…”