2005
DOI: 10.1063/1.1857074
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Role of growth conditions on magnetic properties of AlCrN grown by molecular beam epitaxy

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Cited by 66 publications
(61 citation statements)
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“…[6][7][8][9][10][11][12][13][14][15][16] In particular, Crdoped AlN is one of the most promising materials for practical applications in spin-dependent electronic devices because its Curie temperature has been reported to be above 900 K, which is the highest among III-nitrides. 8,[10][11][12][14][15][16] In the previous reports, the room-temperature ferromagnetism was observed in Cr-doped AlN films fabricated at various substrate temperatures by sputtering 10,15,16) and molecular beam epitaxy, 8,11,12,14) but their magnetic moments were different from each other. In our previous paper, it was reported that the room-temperature ferromagnetism cannot be observed in Cr-doped AlN film with the Cr concentration of 0.07 fabricated at room temperature on a thermally oxidized Si (001) substrate by reactive dc magnetron sputtering.…”
Section: Introductionmentioning
confidence: 99%
“…[6][7][8][9][10][11][12][13][14][15][16] In particular, Crdoped AlN is one of the most promising materials for practical applications in spin-dependent electronic devices because its Curie temperature has been reported to be above 900 K, which is the highest among III-nitrides. 8,[10][11][12][14][15][16] In the previous reports, the room-temperature ferromagnetism was observed in Cr-doped AlN films fabricated at various substrate temperatures by sputtering 10,15,16) and molecular beam epitaxy, 8,11,12,14) but their magnetic moments were different from each other. In our previous paper, it was reported that the room-temperature ferromagnetism cannot be observed in Cr-doped AlN film with the Cr concentration of 0.07 fabricated at room temperature on a thermally oxidized Si (001) substrate by reactive dc magnetron sputtering.…”
Section: Introductionmentioning
confidence: 99%
“…14,18 They argued that the suppressed magnetic moment might be attributed to antiferromagnetic coupling between substitutional Cr ions. 14,18 Furthermore, ferromagnetism was reported for Cr doped AlN thin films deposited on 6H-SiC or sapphire substrates employing molecular beam epitaxy (MBE) at deposition temperatures above 700 C. 3,15,17 Most recently, Shah et al 13 investigated AlN films deposited via RF-plasma-assisted MBE, implanting Cr þ ions and observed a ferromagnetic behavior after applying an additional annealing step at 950 C in a N 2 atmosphere.…”
Section: Thin Film Analysismentioning
confidence: 99%
“…1,3,18 However, the origin of the magnetic behavior, especially considering doping with Cr, is still under investigation. The origin of the room temperature ferromagnetic order has been speculated to be due to clustering and magnetic coupling of Cr 2,15 or defects such as oxygen or nitrogen vacancies based on the bound magnetic polaron model. 14,24 Recent publications argued that the p-d hybridization has a significant impact on the ferromagnetic behavior.…”
mentioning
confidence: 99%
“…However, these dopants are ferromagnetic materials and can easily form magnetic impurities, such as Mn 3 O 4 and Co. Thus, a problem has always arisen on the origin of the ZnO-DMSs, whether the FM was intrinsic or from impurity phase [6]. Recently, RTFM in Cu-doped ZnO was demonstrated both theoretically and experimentally [7,8].…”
Section: Introductionmentioning
confidence: 99%