“…[6][7][8][9][10][11][12][13][14][15][16] In particular, Crdoped AlN is one of the most promising materials for practical applications in spin-dependent electronic devices because its Curie temperature has been reported to be above 900 K, which is the highest among III-nitrides. 8,[10][11][12][14][15][16] In the previous reports, the room-temperature ferromagnetism was observed in Cr-doped AlN films fabricated at various substrate temperatures by sputtering 10,15,16) and molecular beam epitaxy, 8,11,12,14) but their magnetic moments were different from each other. In our previous paper, it was reported that the room-temperature ferromagnetism cannot be observed in Cr-doped AlN film with the Cr concentration of 0.07 fabricated at room temperature on a thermally oxidized Si (001) substrate by reactive dc magnetron sputtering.…”