Role of grain size in superconducting boron-doped nanocrystalline diamond thin films grown by CVD

Zhang, Gufei; Janssens, Stoffel D.; Vanacken, Johan; Timmermans, Matias; Vacı́k, J.; Ataklti, G. W.; Decelle, W.; Gillijns, Werner; Goderis, Bart; Haenen, Ken; Wagner, Patrick; Moshchalkov, Victor

doi:10.1103/physrevb.84.214517

Cited by 43 publications

(49 citation statements)

References 46 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The resistivity decreases as temperature goes down, and reaches, at around 40 K, a low residual value of $0:005-0:009 m, which corresponds to a conductivity about 10 3 times larger than the Mott minimum metallic conductivity $e 2 =@a (the distance between atoms in diamond a $ 1:5 # A). The residual resistivity is much lower than that of often reported resistivity values of microcrystalline and/or nanocrystalline diamond films [22][23][24][25] synthesized with microwave plasma-assisted chemical vapor deposition (MPCVD) method, suggesting good intergrain contacts. Our HDD thick layers were directly deposited on top of the insulating UDD ''substrates,'' and thus no seeding with undoped nanodiamonds was employed to promote the diamond nucleation as in MPCVD.…”

mentioning

confidence: 74%

“…Localized bosonic islands, absorbing ''metallic'' fermions [ Fig. 1(b), panel (2)], are thus responsible for the metalbosonic insulator transition at T c (local) with embedded localized superconducting islands [24,25]. With decreasing temperatures bosonic islands continue to grow [ Fig.…”

mentioning

confidence: 99%

“…0. In strongly disordered superconductors situated in the vicinity of IMT [24,25], the high degree of disorder may result in the formation of localized bosonic islands occurring at different T c (local), i.e., spatially different T c (local) [30]. Suppression of conductivity N !…”

mentioning

confidence: 99%

“…Suppression of conductivity N ! 0 is, therefore, a gradual process, giving rise to a bump rather than a sharp peak superimposed within highly resistive background [24,25] In a two-resistor (normal and superconducting) model, N is connected in parallel to S . Electrical transport can be then approximated as [ Fig.…”

mentioning

confidence: 99%

See 3 more Smart Citations

Metal–Bosonic Insulator–Superconductor Transition in Boron-Doped Granular Diamond

et al. 2013

Self Cite

View full text Add to dashboard Cite

In a variety of superconductors, mostly in two-dimensional (2D) and one-dimensional (1D) systems, the resistive superconducting transition RðTÞ demonstrates in many cases an anomalous narrow RðTÞ peak just preceding the onset of the superconducting state R ¼ 0 at T c . The amplitude of this RðTÞ peak in 1D and 2D systems ranges from a few up to several hundred percent. In three-dimensional (3D) systems, however, the RðTÞ peak close to T c is rarely observed, and it reaches only a few percent in amplitude. Here we report on the observation of a giant ($ 1600%) and very narrow ( $ 1 K) resistance peak preceding the onset of superconductivity in heavily boron-doped diamond. This anomalous RðTÞ peak in a 3D system is interpreted in the framework of an empirical model based on the metal-bosonic insulator-superconductor transitions induced by a granularity-correlated disorder in heavily doped diamond. DOI: 10.1103/PhysRevLett.110.077001 PACS numbers: 74.70.Wz, 71.30.+h, 74.25.Àq, 74.62.En Since the 1950s [1], a puzzling anomalous increase of resistance, RðTÞ, preceding the superconducting transition, has been reported in some superconducting systems situated not yet in the vicinity of the insulator-metal transition (IMT) with relatively low residual resistance. At first, the increase was only observed at the level of a few percent. Later on, in thin films [2][3][4] and 1D whiskers and wires [5,6], similar effects were also found, with a considerably higher amplitude of the RðTÞ anomaly: 16% and 160%. With the discovery of quasi-2D cuprates, the RðTÞ peak around T c was also reported for these lowdimensional materials, such as NdCeCuO [7], BiSrCaCuO [8,9], and LaSrCuO [10,11], with the peak amplitude reaching 400%-700%. In 2D and 1D microstructures [6,[12][13][14][15][16], made from conventional superconducting materials (mostly Al), a narrow resistance peak close to T c was also observed, with the peak amplitude reaching the 400% level.Different models were used to explain the nature of the anomalous RðTÞ peak: normal-metal-superconductor boundaries, disorder and fluctuations, vortex dynamics and Josephson coupling in layered systems, charge imbalance, and competition between superconducting and insulating states in 2D systems [1,2,4,6,8,[12][13][14]16,17].All these observations of the RðTÞ peak around T c and the corresponding models and theories, formulated to explain the corresponding experimental data, are very much linked to the reduced dimensionality of the investigated systems: 2D or/and 1D. We have found reports on the RðTÞ peak for 3D-like metallic Cu-Zr glasses only in a couple of previous publications [17,18] with a quite small RðTÞ peak amplitude-less than 3%. We present here our novel observations of the giant RðTÞ peak in 3D boron-doped granular diamond, which are very different from previously reported data in the following important aspects.First, the effect has a giant amplitude: the peak resistance value exceeds the residual resistance close to T c by 550%-1600%, which is a much higher value tha...

show abstract

mentioning

confidence: 74%

mentioning

confidence: 99%

mentioning

confidence: 99%

mentioning

confidence: 99%

See 2 more Smart Citations

Metal–Bosonic Insulator–Superconductor Transition in Boron-Doped Granular Diamond

et al. 2013

Self Cite

View full text Add to dashboard Cite

show abstract

“…Boron doped silicon wafer of 0.5 mm thickness was pre-treated by aqueous colloid of an ultra-dispersed (5-10 nm) nanodiamond layer [20,21]. Chemical vapor deposition method was performed in plasma-enhanced ASTEX 6500 microwave plasma reactor.…”

Section: Formation Of B:ncd:o Filmmentioning

confidence: 99%

Evaluation of theophylline imprinted polypyrrole film

et al. 2015

View full text Add to dashboard Cite

Growth and Isolation of Large Area Boron‐Doped Nanocrystalline Diamond Sheets: A Route toward Diamond‐on‐Graphene Heterojunction

Bogdanowicz

Ficek

Sobaszek

et al. 2018

Adv Funct Materials

View full text Add to dashboard Cite

Many material device applications would benefit from thin diamond coatings, but current growth techniques, such as chemical vapor deposition (CVD) or atomic layer deposition require high substrate and gas-phase temperatures that would destroy the device being coated. The development of freestanding, thin boron-doped diamond nanosheets grown on tantalum foil substrates via microwave plasma-assisted CVD is reported. These diamond sheets (measuring up to 4 × 5 mm in planar area, and 300-600 nm in thickness) are removed from the substrate using mechanical exfoliation and then transferred to other substrates, including Si/SiO 2 and graphene. The electronic properties of the resulting diamond nanosheets and their dependence on the free-standing growth, the mechanical exfoliation and transfer processes, and ultimately on their composition are characterized. To validate this, a prototypical diamond nanosheet-graphene field effect transistor-like (DNGfet) device is developed and its electronic transport properties are studied as a function of temperature. The resulting DNGfet device exhibits thermally activated transport (thermionic conductance) above 50 K. Below 50 K a transition to variable range hopping is observed. These findings demonstrate the first step towards a low-temperature diamond-based transistor. HeterojunctionsThe ORCID identification number(s) for the author(s) of this article can be found under https://doi.

show abstract

Role of grain size in superconducting boron-doped nanocrystalline diamond thin films grown by CVD

Cited by 43 publications

References 46 publications

Metal–Bosonic Insulator–Superconductor Transition in Boron-Doped Granular Diamond

Metal–Bosonic Insulator–Superconductor Transition in Boron-Doped Granular Diamond

Evaluation of theophylline imprinted polypyrrole film

Growth and Isolation of Large Area Boron‐Doped Nanocrystalline Diamond Sheets: A Route toward Diamond‐on‐Graphene Heterojunction

Contact Info

Product

Resources

About