Role of grain orientation distribution in the ferroelectric and ferroelastic domain switching of ferroelectric polycrystals

Wang, Jie; Shu, Wenjun; Shimada, Takahiro; Kitamura, Takayuki; Zhang, Tong Yi

doi:10.1016/j.actamat.2013.06.044

Cited by 53 publications

(32 citation statements)

References 36 publications

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“…The typical theoretical models include the Landau-type phenomenological theory, phase field simulation and first-principles calculation. [31][32][33][34][35] However, most of the previous theoretical studies have focused on (001)-oriented thin films. Although some researchers have paid attention to systems of different orientations, few can exhibit clearly and systematically how crystal orientations affect the properties of ferroelectric films.…”

Section: Introductionmentioning

confidence: 99%

Effect of crystal orientation on the phase diagrams, dielectric and piezoelectric properties of epitaxial BaTiO3 thin films

Zhang

et al. 2016

AIP Advances

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The influence of crystal orientations on the phase diagrams, dielectric and piezoelectric properties of epitaxial BaTiO3 thin films has been investigated using an expanded nonlinear thermodynamic theory. The calculations reveal that crystal orientation has significant influence on the phase stability and phase transitions in the misfit strain-temperature phase diagrams. In particular, the (110) orientation leads to a lower symmetry and more complicated phase transition than the (111) orientation in BaTiO3 films. The increase of compressive strain will dramatically enhance the Curie temperature TC of (110)-oriented BaTiO3 films, which matches well with previous experimental data. The polarization components experience a great change across the boundaries of different phases at room temperature in both (110)- and (111)-oriented films, which leads to the huge dielectric and piezoelectric responses. A good agreement is found between the present thermodynamics calculation and previous first-principles calculations. Our work provides an insight into how to use crystal orientation, epitaxial strain and temperature to tune the structure and properties of ferroelectrics.

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Section: Introductionmentioning

confidence: 99%

Effect of crystal orientation on the phase diagrams, dielectric and piezoelectric properties of epitaxial BaTiO3 thin films

Zhang

et al. 2016

AIP Advances

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“…To solve Eq. (2) by the finite element method, an eight-node brick element with seven degrees of freedom at each node is employed for the space discretization, and the backward Euler iteration method is adopted for the time integration232425. In the presence of an external electric field, the adiabatic temperature change is calculated by18 where C E ( T , E ) is the heat capacity per unit volume at constant electric field.…”

Section: Methodsmentioning

confidence: 99%

Giant electrocaloric effect in ferroelectric nanotubes near room temperature

Liu

Wang

2015

Sci Rep

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Ferroelectric perovskite oxides possess large electrocaloric effect, but only at high temperature, which limits their potential as next generation solid state cooling devices. Here, we demonstrate from phase field simulations that a giant adiabatic temperature change exhibits near room temperature in the strained ferroelectric PbTiO3 nanotubes, which is several times in magnitude larger than that of PbTiO3 thin films. Such giant adiabatic temperature change is attributed to the extrinsic contribution of unusual domain transition, which involves a dedicated interplay among the electric field, strain, temperature and polarization. Careful selection of external strain allows one to harness the extrinsic contribution to obtain large adiabatic temperature change in ferroelectric nanotubes near room temperature. Our finding provides a novel insight into the electrocaloric response of ferroelectric nanostructures and leads to a new strategy to tailor and improve the electrocaloric properties of ferroelectric materials through domain engineering.

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“…Actually, the structure of ferroelectric thin films in FeFETs is generally polycrystalline film which is composed of grain boundary and grain orientation. The grain boundary and grain orientation have a significant effect on the C–V relation curve and the output characteristic curve of FeFETs through the remnant polarization value and the coercive field of ferroelectric films . It has been reported that hysteresis loops with different grain orientations are distinguishing, particularly in their coercive fields .…”

Section: Introductionmentioning

confidence: 99%

“…It has been reported that hysteresis loops with different grain orientations are distinguishing, particularly in their coercive fields . Wang et al reported that the macroscopic coercive field, remnant polarization and remnant strain in a ferroelectric polycrystal with a random distribution of grain orientation are correspondingly smaller than those in a polycrystal with a uniform distribution of grain orientation . Shu et al found that both the coercive field and remnant polarization of PbTiO 3 decrease with increasing thickness of the dielectric grain boundary .…”

Section: Introductionmentioning

confidence: 99%

“…Lee et al prepared a Pb(Zr,Ti)O 3 (PZT) polycrystalline ferroelectric thin film using magnetron sputtering and the results show that the grain boundary leads to the decrease of the remnant polarization of PZT thin film and the increase of leakage current . The grain boundary and grain orientation have a significant influence on the electrical properties of polycrystalline ferroelectric film through the domain switching . Choudhury et al showed that grain orientation affects the domain structure of polycrystalline ferroelectric thin film, which causes the changing of coercive field and that the nucleation of 90° domains can reduce the depolarization field at grain boundary of PbTiO 3 polycrystalline ferroelectric thin films .…”

Section: Introductionmentioning

confidence: 99%

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Effects of grain boundary and grain orientation on electrical behavior of polycrystalline ferroelectric field effect transistor

Wang

et al. 2017

Physica Status Solidi (a)

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The effects of grain boundary thickness and grain orientation on the electrical behavior of a ferroelectric field effect transistor with a polycrystalline gate are investigated using a phase field model in conjunction with the basic device equations of the field effect transistor. It is found that the grain boundary and grain orientation have a significant effect on the C-V relation curve and the output characteristic curve through the remnant polarization value and the coercive field of polycrystalline ferroelectric thin film. The grain orientation and grain boundary cause the memory window of the C-V relation curves to narrow. And the grain orientation and grain boundary have an influence on the on/off state source-drain current, decrease their on-off ratio of the output characteristics curves in the ferroelectric field effect transistor.

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Role of grain orientation distribution in the ferroelectric and ferroelastic domain switching of ferroelectric polycrystals

Cited by 53 publications

References 36 publications

Effect of crystal orientation on the phase diagrams, dielectric and piezoelectric properties of epitaxial BaTiO3 thin films

Effect of crystal orientation on the phase diagrams, dielectric and piezoelectric properties of epitaxial BaTiO3 thin films

Giant electrocaloric effect in ferroelectric nanotubes near room temperature

Effects of grain boundary and grain orientation on electrical behavior of polycrystalline ferroelectric field effect transistor

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