The lattice thermal conductivity of cubic silicon carbide is evaluated by means of a microscopic model considering the discrete nature of the lattice and its Brillouin zone for phonon dispersions and scattering mechanisms. The phonon Boltzmann equation is solved iteratively, with the three-phonon normal and umklapp collisions rigorously treated, avoiding relaxation-time approximations. Good agreement with the experimental data is obtained. Moreover, the role of point defects, such as antisites, on the lattice thermal conductivity is discussed. ͱ qp ͓⑀ qp,b * e Ϫiq•l a qp Ϫ⑀ qp,b e iq•l a qp † ͔, ͑1͒ PHYSICAL REVIEW B 66, 174301 ͑2002͒