Role of external fields on the nonlinear optical properties of a n-type asymmetric $$\delta$$-doped double quantum well

Durmuslar, Aysevil Salman; Ungan, F.

doi:10.1007/s11082-020-02573-5

Cited by 4 publications

(3 citation statements)

References 39 publications

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“…They show this asymmetric structure is more precise and preferable to control the second harmonics generation (SHG) through the external fields. Other theoretical investigations on the SHG susceptibility in the presence of applied electric field have been carried out by Salman Durmuslar et al [5] for the n-type asymmetric δ-doped double quantum well. In their study, they reported that the applied electric field leads to an optical red-shift on SHG while the magnetic field causes an optical blue-shift on that coefficient.…”

Section: Introductionmentioning

confidence: 99%

Disorder effect on intersubband optical absorption of n-type δ-doped quantum well in GaAs

Noverola-Gamas,

Macias Rojas,

Azalim

et al. 2023

J. Phys.: Condens. Matter

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The inevitable structural disorder associated with the fluctuation of the applied external electric field, laser intensity, and bidimensional density in the low dimensional quantum system can affect noticeably optical absorption properties and the related phenomena. In this work, we study the effect of structural disorder on the optical absorption properties in delta-doped quantum wells (DDQWs). Starting from effective mass approximation and the Thomas-Fermi approach as well as using the matrix density, the electronic structure and the optical absorption coefficients of DDQWs are determined. It is found that the optical absorption properties depend on the strength and the type of structural disorder. Particularly, the bidimensional density disorder suppresses strongly the optical properties. Whilst, the disordered external applied electric field fluctuates moderately in the properties. In contrast, the disordered laser holds absorption properties unalterable. So, our results specify that to have and preserve good optical absorption properties in DDQWs, requires precise control of the bidimensional. Besides, the finding may improve the understanding of the impact of the disorder on the optoelectronic properties based on DDQWs.

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Section: Introductionmentioning

confidence: 99%

Disorder effect on intersubband optical absorption of n-type δ-doped quantum well in GaAs

Noverola-Gamas,

Macias Rojas,

Azalim

et al. 2023

J. Phys.: Condens. Matter

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“…The literature concentrates a lot of information on this material related to subband structure, electron or hole mobilities, and optoelectronic properties. [14,15,[20][21][22][23][24][25] On the other hand, lower number works have been conducted on delta-layers for Si, and this is due to the problems to incorporate dopants in a controlled process of MBE growth for Si. [26] Another important point is that, in δ -doped potential profiles cases, there are recent studies in nonlinear optical properties.…”

Section: Introductionmentioning

confidence: 99%

“…[26] Another important point is that, in δ -doped potential profiles cases, there are recent studies in nonlinear optical properties. [15,23,27,28] For instance, Durmuslar et al [20] determined the effects on the nonlinear optical rectification, second harmonic generation, and third harmonic generation of n-type asymmetric double delta-doped GaAs quantum well. In this work, the obtained results indicate that an electric field leads to optical red-shift on nonlinear coefficients while the magnetic field causes optical blue-shift.…”

Section: Introductionmentioning

confidence: 99%

Nonlinear optical properties in n-type quadruple δ-doped GaAs quantum wells

Noverola-Gamas¹,

Gaggero‐Sager²,

Oubram³

2022

Chinese Phys. B

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The effects of the interlayer distance on the nonlinear optical properties of n-type quadruple δ-doped GaAs quantum well were theoretically investigated. Particularly, the absorption coefficient and the relative refraction index change were determined. In the effective mass approach and within the framework of the Thomas–Fermi theory, the Schrödinger equation was resolved. Thereby, the subband energy levels and their respective wave functions were calculated. The variations in the nonlinear optical properties were determined by using the density matrix solutions. The achieved results demonstrate that the interlayer distance causes optical red-shift on nonlinear optical properties. Therefore, it can be deduced that the suitably chosen interlayer distance can be used to tune optical properties within the infrared spectrum region in optoelectronic devices such as far-infrared photo-detectors, high-speed electronic-optical modulators, and infrared lasers.

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Effects of external electric and magnetic field on the nonlinear optical rectification, second, and third-harmonic generations in GaAs/AlGaAs asymmetric triple quantum well

Tuzemen,

Al,

Dakhlaoui

et al. 2023

Eur. Phys. J. Plus

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Role of external fields on the nonlinear optical properties of a n-type asymmetric $$\delta$$-doped double quantum well

Cited by 4 publications

References 39 publications

Disorder effect on intersubband optical absorption of n-type δ-doped quantum well in GaAs

Disorder effect on intersubband optical absorption of n-type δ-doped quantum well in GaAs

Nonlinear optical properties in n-type quadruple δ-doped GaAs quantum wells

Effects of external electric and magnetic field on the nonlinear optical rectification, second, and third-harmonic generations in GaAs/AlGaAs asymmetric triple quantum well

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