Role of electronic excitations and nuclear collisions for color center creation in Al Ga1−N semiconductors

Moisy, F.; Grygiel, C.; Ribet, A.; Sall, M.; Balanzat, E.; Monnet, I.

doi:10.1016/j.nimb.2016.02.033

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Role of electronic excitations and nuclear collisions for color center creation in Al Ga1−N semiconductors

Cited by 5 publications

References 22 publications

Ion Implantation in Group III Nitrides ☆

Ion Implantation in Group III Nitrides ☆

Effects of electronic and nuclear stopping power on disorder induced in GaN under swift heavy ion irradiation

Electronic excitations induced climb of dislocations in swift heavy ion irradiated AlN and AlxGa1−xN

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