The critical dimension of semiconductor devices is approaching the single-nm regime, and a variety of practical devices of this scale are targeted for production this decade. Planar structures of nano-devices are still the center of fabrication techniques, which limit further integration of devices into a chip. Extension into 3D space is a promising strategy for future device integration; however, the steep increase in the number of surfaces and their interaction in 3D nanospace make it hard to integrate nanostructures with aspect ratios over ~ 10. We report herein a unique technique to produce uniform free-standing 1D nanostructures with extremely high aspect ratios over 100, borrowing from technology developed for cancer radiotherapy with high-energy charged particles. Along the straight trajectory of particles penetrating the condensed phase of a variety of sublimable organic molecules, 1D nanowires were formed with single-nm thickness and perfectly controlled length. An all-dry process was developed to isolate the nanowire plexus, and hetero-junction structures could be facilely built into the nanowires by the new technique. Coaxial extension of nanowires by a chemical process allowed us to freely design the nanowires both in axial and radial directions.